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    900156 Search Results

    900156 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    87900-156HLF
    		Amphenol Communications Solutions BergStik® 2.54mm, Board to Board connector, Unshrouded Header, Through Hole, Double Row, 56 Positions, 2.54 mm Pitch, Vertical, 18.29 mm (0.72in) Mating, 3.05 mm (0.12in) Tail. PDF
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    900156 Price and Stock

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    Phoenix Contact 2900156

    Specialized Cables VIP-CAB-FLK16/FR/FR/ 0,14/2,0M
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    Mouser Electronics 2900156
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    RS 2900156 Bulk 1
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    Mill-Max Mfg Corp 800-90-015-62-001000

    Headers & Wire Housings STANDARD PIN HEADER
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    Mouser Electronics 800-90-015-62-001000
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    API Delevan CM9900-156

    Common Mode Chokes / Filters Through Hole, PC Mount Common Mode Choke, 15000 uH , +/- 25%
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    Mouser Electronics CM9900-156
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    Mill-Max Mfg Corp 800-90-015-61-001000

    Headers & Wire Housings STANDARD PIN HEADER
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    Mouser Electronics 800-90-015-61-001000
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    SPC Multicomp ASM-1900156-01

    Touchscreen Portable Case - Clear; |Multicomp Pro ASM-1900156-01
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    Newark ASM-1900156-01 Bulk 707 1
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    900156 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |im Process (Lef1= 0.55 ^m) • Read/Write Cycle Times < 16 ns (Typical) <2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)


    OCR Scan     		hx62281x1061x1011x109+132-lead PDF

    900156

    Abstract: HX6228 smd a7 transistor
    Contextual Info: Honeywell Military & Space Products HX6228 128K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS’“ IV Silicon on Insulator SOI 0.7 |im Process (LeN= 0.55 |im) • Read/Write Cycle Times < 16 ns (Typical) <25 ns (-55 to 125°C)


    OCR Scan     		1x1061x1011x109hx6228+532-lead40-lead125jc900156smd a7 transistor PDF

    Transistors smd A7H

    Abstract: HX6228
    Contextual Info: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |a,m Process (Leff= 0.55 |a,m) • Read/Write Cycle Times < 16 ns (Typical) < 2 5 ns (-55 to 125°C)


    OCR Scan     		1x1061x101hx622832-lead+1transistors smd a7h PDF

    hx6228

    Abstract: MIL-PRF38535
    Contextual Info: Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 16 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		hx62281x1061x10111x1012+31x10-1032-leadmil-prf38535 PDF

    HX6228

    Abstract: MIL-PRF38535
    Contextual Info: Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 16 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		hx62281x1061x10111x1012+31x10-1032-leadmil-prf38535 PDF

    HX6228

    Abstract: MIL-PRF38535
    Contextual Info: Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 µm Process (Leff = 0.55 µm) • Read/Write Cycle Times ≤ 16 ns (Typical) ≤ 25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		hx62281x1061x10111x1012+31x10-1032-leadmil-prf38535 PDF

    Transistors smd A7H

    Contextual Info: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 p.m Process (Lefl= 0.55 |xm) • Read/Write Cycle Times < 16 ns (Typical) < 25 ns (-55 to 125°C)


    OCR Scan     		hx62281x101transistors smd a7h PDF

    Contextual Info: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 n.m Process (Leff= 0.55 |om) • Read/Write Cycle Times < 16 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x10 rad(Si02)


    OCR Scan     		1x101hx622832-lead40-leasistance PDF