8X14MM Search Results

pmc flash pm49fl004t-33jc

Abstract: Pm49FL004T-33JC W39V040FAP winbond w39v040fap winbond bios w39v040ap pmc flash pm49fl002t-33jc W39V040AP ATMEL BIOS AT49lh00b4 PM49FL008T-33JC SST49LF004B-33-4C-NHE
Contextual Info: Flash memory for PC and server BIOS Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties

ST m27c512

Abstract: TSOP44 Package SO32 m27c1001 plcc32 ST M27C256B Atmel 642 M27C4002 m27c4001 CROSS REFERENCE PLCC32 package EPROM m27c2001
Contextual Info: OTP and UV EPROM Products www.st.com/eprom Cross Reference Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions Introduction Long-term commitment STMicroelectronics will support the EPROM market in the long term with a strong commitment, guaranteeing manufacturing capability and high quality service. Continuous

MT48LC16M16

Abstract: 57256 A11 MARKING CODE MT48LC16M16A2 MT48LC32M8A2 MT48LC64M4A2 PC133 registered reference design mt48lc16m16a2fg-7e
Contextual Info: 256Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks MT48LC16M16A2 – 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES • PC66-, PC100-, and PC133-compliant

Contextual Info: Preliminary Specifications CMOS LSI LE28F4001CTS-12 4M-Bit 512k x 8 Flash EEPROM Features CMOS Flash EEPROM Technology Single 5-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Fast Access Time: 120 ns Low Power Consumption Active Current(Read): 25 mA (Max.)

Contextual Info: 256Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate DDR SDRAM MT46V64M4 – 16 Meg x 4 x 4 banks MT46V32M8 – 8 Meg x 8 x 4 banks MT46V16M16 – 4 Meg x 16 x 4 banks For the most current data sheet, please refer to the Micron Web site: www.micron.com/datasheets

Contextual Info: 256Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V64M4 – 16 MEG x 4 x 4 BANKS MT46V32M8 – 8 MEG x 8 x 4 BANKS MT46V16M16 – 4 MEG x 16 x 4 BANKS For the latest data sheet revisions, please refer to the Micronâ Web site: www.micron.com/datasheets

16m16 ddr400

Contextual Info: 256Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V64M4 – 16 MEG x 4 x 4 BANKS MT46V32M8 – 8 MEG x 8 x 4 BANKS MT46V16M16 – 4 MEG x 16 x 4 BANKS For the latest data sheet revisions, please refer to the Micronâ Web site: www.micron.com/datasheets

Contextual Info: W29EE011 128K x 8 CMOS FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3

Contextual Info: M36WT864TF M36WT864BF 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit (512K x16) SRAM, Multiple Memory Product PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE SRAM 8 Mbit (512K x 16 bit) – VDDF = 1.65V to 2.2V ■ – VDDS = VDDQF = 2.7V to 3.3V

winbond bios w39v080fapz

Abstract: W39V080FAPZ W39V080FAP winbond bios W39v080FA F Sector11 w39v080
Contextual Info: W39V080FA Data Sheet 1M x 8 CMOS FLASH MEMORY WITH FWH INTERFACE Table of Contents1. 2. 3. 4. 5. 6. GENERAL DESCRIPTION . 3 FEATURES . 3

winbond bios w39v080fapz

Abstract: w39v080fapz
Contextual Info: W39V080FA Data Sheet 1M x 8 CMOS FLASH MEMORY WITH FWH INTERFACE Table of Contents1. 2. 3. 4. 5. 6. GENERAL DESCRIPTION . 3 FEATURES . 3

w39v080apz

Abstract: FFBC0100 W39V080A
Contextual Info: W39V080A Data Sheet 1M x 8 CMOS FLASH MEMORY WITH LPC INTERFACE Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3

Contextual Info: A29L040 Series 512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory Document Title 512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory Revision History History Issue Date 0.0 Initial issue December 10, 2002 0.1 Add 32-pin DIP package type

Contextual Info: A29L040 Series 512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory Document Title 512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory Revision History History Issue Date 0.0 Initial issue December 10, 2002 0.1 Add 32-pin DIP package type

116a

Abstract: IN3064 MX27L2000 27l20
Contextual Info: Introduction Selection Guide MX27L2000 2M-BIT 256K x 8 CMOS EPROM FEATURES • • • • • • • 256Kx 8 organization Wide power supply range, 2.7V DC to 3.6V DC +12.5V programming voltage Fast access time: 120/150/200/250 ns Totally static operation

Contextual Info: Preliminary Specifications CMOS LSI LE28FV4001CTS-20 4M-Bit 512k x 8 Flash EEPROM Features CMOS Flash EEPROM Technology Single 3.3-Volt Read and Write Operations Sector Erase Capability: 256 Bytes per sector Fast Access Time: 200 ns Low Power Consumption

A29L040-70F

Abstract: A29L040L-70F A29L040V-70F A29L040L A29L040V-70 A29L040 IN3064
Contextual Info: A29L040 Series 512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory Document Title 512K X 8 Bit CMOS 3.0 Volt-only, Uniform Sector Flash Memory Revision History History Issue Date 0.0 Initial issue December 10, 2002 0.1 Add 32-pin DIP package type

Contextual Info: MX27L2000 2M-BIT [256Kx8] CMOS EPROM FEATURES • • • • • • • 256Kx 8 organization Wide power supply range, 2.7V DC to 3.6V DC +12.5V programming voltage Fast access time: 120/150/200/250 ns Totally static operation Completely TTL compatible Operating current:20mA @ 3.6V, 5MHz

M27W201

Abstract: M27C2001 PDIP32 PLCC32 TSOP32
Contextual Info: M27W201 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V LOW VOLTAGE in READ OPERATION ■ ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V 32 32 – 80ns at VCC = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C2001 ■ LOW POWER CONSUMPTION: 1

Contextual Info: •WIXIC M X27L2000 2 M-BIT 2 5 6 K x 8 CMOS EPROM FEATURES • • • • • • • 256Kx 8 organization Wide power supply range, 2.7V DC to 3.6V DC +12.5V programming voltage Fast access time: 120/150/200/250 ns Totally static operation Completely TTL compatible

W29EE011P90z

Abstract: W29EE011P-90 W29EE011P-90Z WINBOND W29EE011-15
Contextual Info: W29EE011 128K x 8 CMOS FLASH MEMORY Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION . 3 FEATURES . 3

t2792

Contextual Info: M36WT864TF M36WT864BF 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit (512K x16) SRAM, Multiple Memory Product PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE SRAM 8 Mbit (512K x 16 bit) – VDDF = 1.65V to 2.2V ■ – VDDS = VDDQF = 2.7V to 3.3V

winbond bios w39v080fapz

Abstract: w39v080fapz winbond bios W39v080FA F W39V080FAP FFBC0100 W39V080FA
Contextual Info: W39V080FA Data Sheet 1M x 8 CMOS FLASH MEMORY WITH FWH INTERFACE Table of Contents1. 2. 3. 4. 5. 6. GENERAL DESCRIPTION . 3 FEATURES . 3

jl-026

Abstract: A151 A161 SST39VF020
Contextual Info: 2 Megabit 256K x 8 Multi-Purpose Flash SST39VF020 Preliminary Specifications FEATURES: • Organized as 256K X 8 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention