8KX8 RAM Search Results

TC5564

Abstract: 2064 ram Static RAM 2064 8KX8-01 8KX8-03
Contextual Info: CMOS 8KX8-01 CMOS 8KX8-03 64K CMOS STATIC RAM 8,192 WORD X 8 BIT In tegrated C irc u its In c o rp o ra te d S c rs s 206 882-3100 TWX 910-443-2302 integrated circuits incorporated FEATURES: □ □ □ □ □ □ □ □ The CMOS 8KX8-0X series of CMOS S ta tic RAMs

Contextual Info: ^EDI EDI8810H/L Electronic D e s ig n s In o Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic •lOiDi Features The EDI8810H/L is a 65,653bit, 6 transistor cell 8Kx8 bit C M O S Static Random A c ce ss Memory C M O S Static R A M organized a s 8Kx8.

Contextual Info: STATIC SRAM RAM Random Access Memory 8Kx8 64K QA SOP LH5164AN

EDI8808CB

Contextual Info: ^EDI _ EDI8808CB Electronic Designs Inc. High Speed, Low Power 64K Monolithic SRAM QiF MM1]©i 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Random Access Memory Static RAM organized as 8Kx8.

Contextual Info: RJ1 Prelim inary U N I T R O O E 8Kx8 ZEROPOWER NVSRAM Features General Description > Integrated ultra low-power SRAM, power-fail control circuit, and battery The bq4310Y ZEROPOWER NVSRAM is a 8Kx8 nonvolatile static RAM. The monolithic chip is available in the SNAPHAT package

transistor D883

Abstract: EDI8810HL e255 8KX8-Bit CMOS SRAM
Contextual Info: ^EDI _ EDI8810H/L Electronic D e sig n s I n o * Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic iUMDN Features The EDI8810H/L is a 65,653bit, 6 transistor cell CMOS Static RAM organized as 8Kx8. It is available in both standard H and low power (L)

EDI8808CB

Abstract: C323 64K 8KX8 CMOS SRAM sram 8kx8
Contextual Info: ^EDI _ EDI8808CB E le ctro n ic D « d g ru Inc. High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Static RAM organized as 8Kx8. Ali inputs and outputs are TTL compatible and allow

Contextual Info: ^EDI _ EDI8808CB Electronic Designs Inc. High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic The EDI8808CB is a 65,536bit, high speed CMOS Q iF M M 1]© i Features Static RAM organized as 8Kx8. All inputs and outputs are TTL compatible and allow

Contextual Info: moi _ EDI8810H/L Electronic Designs Inc* Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic Features The E D I8810H /L is a 65,653bit, 6 transistor cell C M O S Static RAM organized as 8Kx8. It is available in both standard H and low power (L)

80C31 instruction set

Abstract: BOC31 80C31 F800H MCS-51 80c31 application 685C31
Contextual Info: '<Teï r er~>& EDH 685C31 EEPROM jjPak 8/12 MHz The fu tu re . . . today. PRELIMINARY Microcomputer 80C31 Based, CMOS 8Kx8 EEPROM plus 8Kx8 SRAM 0> 005612 Features The EDH 685C31 ^PAK from EDI is a new series of high density microcomputer modules based on the industry-standard 80C31 single

ELECTRONIC DESIGNS INC 91 PAGE 343

Abstract: E2 SMD Transistor 5962-89598 EDI8810H EDI8810HL
Contextual Info: ^EDI _ EDI8810H/L Electronic Designs I n o Low Power 6T CMOS Monolithic SRAM 8Kx8 Static RAM CMOS, Low Power Monolithic Features The EDI8810H/L is a 65,653bit, 6 transistor cell C M O S Static R A M organized a s 8Kx8. Random A cce ss Memory It is available in both standard H and low power (L)

UPAK

Abstract: static ram 8KX8 sram 8kx8 memory map
Contextual Info: pS. & • t<b EDH 685C31 ^E D I EEPROM |iPak 8/12 MHz The fu tu re . . . today. PRELIMINARY Microcomputer 80C31 Based, CMOS 8Kx8 EEPROM plus 8Kx8 SRAM O 005612 6 L Features The EDH 685C31 pPAK from EDI is a new series of high density microcomputer modules

1202z

Abstract: MR80C31 J65608 8kx8 sram LCC48 128KX8 SRAM 5962-8506401MQA C965608 5962-89X MR-80C3
Contextual Info: Tem ic SMD Semiconductors Standard Military Drawings SMD Number Features TEMIC Part Number Package 5962-3829409MXA 55 ns SKxH SRAM HM Î E-65764N/883 CDIL28 60Í mils 5962-3829409MYC 55 ns 8Kx8 SRAM HM4-65764N/883 LCC32 5962-3829409MZA 55 ns 8Kx8 SRAM HMI-65764N/883

Contextual Info: High Performance 8Kx8 CMOS SRAM II AS7C164 AS7C164L 8Kx8 CMOS SRAM Common I/O \F E A T U R E S • Organization: 8,192 words x 8 bits • Easy Memory Expansion with CE1, CE2 and OE Options • High Speed: 12/15/20/25 ns Address access time 3,4,5,6 ns Output Enable access time

TC5564

Abstract: 8KX8-01 srm2064 8KX8-03
Contextual Info: Iksi i CMOS 8KX8-01 CMOS 8KX8-03 ^ n a •■ 64K CMOS STATIC RAM g -J 02 VVORD X 8 BIT In tegrated C irc u its In co rp o ra te d 10301 W i I lo w s R o a d m R edm ond, WA 98052 206 882-3100 TW X 910-443-2302 - f c . - FEATURES: □ □ □ □ □ □

IS61SP25636

Abstract: s62lv256 256x16 sram 89C64 IS41LV16105 soj44 non-volatile SRAM 4KX8 issi 32kx16 IS80C31 64KX64
Contextual Info: ASYNCHRONOUS & APPLICATION SPECIFIC STATIC RAM Density Org. P/N Voltage Speeds ns Packages #Pins Status Comment Prod Prod Prod Prod Prod /CE 5V High Asyncronous SRAM 64K 256K 512K 1M 8Kx8 32Kx8 32Kx16 32Kx16 128Kx8 IS61C64B IS61C256AH IS61C3216 IS61C3216B

8kx8 RAM

Abstract: real time clock calendar bq3485
Contextual Info: h Advance Information BENCHMARQ Real-Time Clock RTC With 8Kx8 RAM General Description Features >- Direct clock/calendar replacement for IBM AT-compatible computers and other applications >• Density upgrade of the bq3385R >• 160 ns cycle time allows fast bus

Contextual Info: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

AAA1M304

Abstract: tc514256 UM6164 um6164b DYNAMIC RAM CROSS REFERENCE tc554256 M5M44C256 MB82005 NMB Semiconductor IS61C256A
Contextual Info: Cross Reference & Fast Static RAM Vendor Cypress Fujitsu Hitachi IDT ISSI Micron Mltsubish P/N Alliance P/N Description P/N Alliance P/N CY7C106 AS7C1028 256K x 4 MCM32A32 AS7M32D128 128K module CY7C185 AS7C164 8Kx8 MCM32A64 AS7M32D256 256K module CY7C188

A3738

Abstract: CA1023 8kx8 sram
Contextual Info: ^EDI _ EDI8808CB Electronic Designs Inc High Speed, Low Power 64K Monolithic SRAM 8Kx8 Static RAM CMOS, High Speed Monolithic Features The EDI8808CB is a 65,536bit, high speed CMOS 64K bit CMOS Static Random Access Memory • Access Times 20,25,35, and 45ns

FM3130-G

Abstract: FM3130-GTR FM3130 FM3130G 4558 bcd
Contextual Info: FM3130 Integrated RTC/Alarm and 64Kb F-RAM Features High Integration Device Replaces Multiple Parts • Serial Nonvolatile Memory  Real-time Clock RTC with Alarm  Clock Output (Programmable frequency) 64Kb Ferroelectric Nonvolatile RAM  Internally Organized as 8Kx8

Contextual Info: bq4010/bq401OY BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description ► Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

FM3130

Contextual Info: FM3130 Integrated RTC/Alarm and 64Kb F-RAM Features High Integration Device Replaces Multiple Parts • Serial Nonvolatile Memory  Real-time Clock RTC with Alarm  Clock Output (Programmable frequency) 64Kb Ferroelectric Nonvolatile RAM  Internally Organized as 8Kx8

FM3130

Abstract: FM3130-G RIC0624 TST 7595
Contextual Info: Preliminary FM3130 Integrated RTC/Alarm and 64Kb FRAM Features High Integration Device Replaces Multiple Parts • Serial Nonvolatile Memory • Real-time Clock RTC with Alarm • Clock Output (Programmable frequency) 64Kb Ferroelectric Nonvolatile RAM • Internally Organized as 8Kx8