8KX8 EPROM PIN DIAGRAM Search Results

sram 8kx8 memory map

Abstract: 8kx8 eprom pin diagram 80c31 application MAX11213
Contextual Info: <U x_0 ^EDI 11* Aft ^ The fu tu re .to d a y , • ■ ■ E B H 6 0 7 G 31 IxPak Family 8/12 MHz h h Microcomputer 80C31 Based, CMOS 8K or 32Kx8 EPROM plus 8Kx8 SRAM h h h h h ih h h h im h Features The EDH 607C31 ^PAK family from EDI Is the first in a series of high density microcomputer

8kx8 eprom pin diagram

Abstract: XTAL 12MH 80C31 F800H MCS-51 8kx8 sram static ram 8KX8 INTEL 24 PIN CERAMIC DUAL-IN-LINE PACKAGE
Contextual Info: 3230114 E L E C T R O N I C D E S I G N S INC ELECTRONIC DESIGNS IN C 85D 00184 B S D E | 323011M '37 D □□001A4 3 EDH 607C31 ¡S ri J I jaPak Family 8/12 MHz T h e fu tu r e . .to d a y . Microcomputer 80C31 Based, CMOS 8K or 32Kx8 EPROM plus 8Kx8 SRAM

sram 8kx8 memory map

Abstract: 80C31 Development Board 80C31 F800H MCS-51 Ram 64k 8kX8 80C31 instruction set UPAK
Contextual Info: açx.o ^ ' it* ' E M 607G31 jxPak Family 8/12 MHz Th e fu tu re . . . today. Microcomputer 80C31 Based, CMOS 8K or 32Kx8 EPROM plus 8Kx8 SRAM Features The EDH 607C31 uPAK family from EDI is the first in a series of high density microcomputer modules based on the industry-standard 80C31

B3A5

Abstract: cmos prom Prom 8KX8 55nac
Contextual Info: Signetics 27HC641 64K-Bit CMOS PROM 8Kx 8 Product Specification Military CMOS Memory Products PIN CONFIGURATION DESCRIPTION FEATURES Tha 27HC641 is a CMOS, high-speed UV erasable, electronically programmed Read Only Memory. It is organized as 8192 words of 6 bits and operates from a

z80 sio rs232

Abstract: ZILOG SIO evolution of zilog microprocessor circuit diagram moving message for z80 y eprom 27 Z84C15 ASM800 zilog CROSS z84c15 ASM80K zasm z80 MAX232
Contextual Info: Z84C15 EVALUATION KIT ^ IL O G UM016001 -0703 Z84C15 EVALUATION KIT P/N Z84C1500ZC0 TABLE OF CONTENTS 1. DESCRIPTION. 2 1.1 FUNCTIONAL DESCRIPTION.2 1.2 HARDWARE DESCRIPTION. 2

signetics 27c64

Abstract: 27C64A 27C64A-25 27C64A SIGNETICS 2764 64k uv erasable prom 27C84 signetics 27c64a 27C64A/BXA-20 eprom 27c64 PROGRAMMER CIRCUIT intelligent 2764
Contextual Info: NAPC/ SIGN ETIC S/MILITAR Y Signetics abE D • tbSa^at Ü O C m l S 1 ■ 27C64A 64K CMOS UV Erasable PROM 8K x 8 Product Specification Military Application Specific Products CERDIP PIN CONFIGURATION DESCRIPTION The Signetics 27C64A CMOS EPROM Is 64K-BK 5V only memory organized as

4kx8 sram

Abstract: SRAM 4KX8 8kx8 sram DOC11 4Kx8 bit 2732 8kx8 eprom pin diagram 2764 eprom PINOUT sram 8kx8 vc128 8kx8 RAM
Contextual Info: inter 4Kx8 4096 X 8-BIT STATIC RAM • Fully Static Operation; No Clocks, Refresh or Latches ■ Two Line Control, ÜÉ Controls PowerDown, ÜE Controls Output Buffers — Eliminates Bus Contention ■ EPROM Compatible JEDEC Standard Plnout ■ 150 ns Maximum Access Time

27C64a-25

Abstract: 27C64A signetics 27c64a Intel Military Product 1990
Contextual Info: 27C64A Signetics 64K CMOS UV Erasable PROM 8K x 8 Product Specification Military Application Specific Products DESCRIPTION CER D IP PIN CO NFIGURATION The Signetics 27C64A CMOS EPROM is 64K-Bit 5V only memory organized as 8192 words of 8 bits, employing advanced

2kx8 sram

Abstract: SRAM 4KX8 4kx8 sram 8Kx8 sram 8kx8 eprom pin diagram INTEL 2764 intel 2732 eprom C1217 8Kx8 eprom C722
Contextual Info: A O M IN ! OMIF©fôlîMïrD@Kl intei 2048 X 2K X 8 8-BIT STATIC RAM Fully Static Operation; No Clocks, Refresh or Latches Two Line Control, CE Controls PowerDown, OE Controls Output Buffers — Eliminates Bus Contention EPROM Compatible Pinout 150 ns Maximum Access Time

sram 16kx8

Contextual Info: P U M A 11 Issue 1.1: October 1988 molate ADVANCED PRODUCT INFORMATION Mosaic Sem iconductor Inc Pinned Uncommited Memory Array Pin Definition Features PGA allowing ASIC combinations of SRAM, EEPROM and UV EPROM Maximum total memory size of 128k x 8 SRAM/EEPROM

24 SIGNETICS

Abstract: 27HC641 84PGA
Contextual Info: NAPC/ S I G N E TIC S/ ni LI TA RY Signetics 20 E D • bbSB^St, 000173b T 27HC641 64K-Bit CMOS PROM 8Kx 8 Product Specification Military CMOS Memory Products PIN CONFIGURATION DESCRIPTION FEATURES The 27HC641 is a CMOS, high-speed UV erasable, electronically programmed

27C8001

Abstract: socket am3 retention SR001 VME-A16 am3 socket pin diagram D-82054 41256 AM3 motherboard
Contextual Info: User’s Manual SR001 5th edition Declaration of Conformity We, Manufacturer MicroSys Electronics GmbH Mühlweg 1 D-82054 Sauerlach Germany declare that the product SR 001 is in conformity with: EN 50081-1 Generic emission standard EN 50082-1 Generic immunity standard

2764 eprom PINOUT

Abstract: 4Kx8 sram ttl 2764 RAM 4Kx8 rom ttl 4kx8 sram INTEL 2764 EPROM INTEL 2764 SRAM 4KX8 4kx8 static ram ttl 2Kx8 SRAM
Contextual Info: A O M IN ! OMIF©fôlîMïrD@Kl in te i 2048 X 2K X 8 8-BIT STATIC RAM Fully Static Operation; No Clocks, Refresh or Latches Two Line Control, CE Controls PowerDown, OE Controls Output Buffers — Eliminates Bus Contention EPROM Compatible Pinout 150 ns Maximum Access Time

intel 2732 eprom

Abstract: intel 2732 2732 eprom IC 2732 pin diagram of ic 2732 pin diagram of ic 2764 4Kx8 rom ttl eprom 2732 ram 2732 2kx8 sram
Contextual Info: A O M IN ! OMIF©fôlîMïrD@Kl in te i 2048 X 2K X 8 8-BIT STATIC RAM Fully Static Operation; No Clocks, Refresh or Latches Two Line Control, CE Controls PowerDown, OE Controls Output Buffers — Eliminates Bus Contention EPROM Compatible Pinout 150 ns Maximum Access Time

TRANSISTOR B737

Abstract: MD80C31 smd TRANSISTOR code marking 8K 67202FV PGA300 5962-8506401MQA ERC32SIM marking code RAD SMD Transistor npn ISO DIMENSIONAL certificate formats 67205E
Contextual Info: Integrated Circuits for Aerospace and Defense Short Form 1998 16 June 1998 Publisher: TEMIC Semiconductors La Chantrerie BP 70602 44306 Nantes Cedex 03 FRANCE Fax: +33 2 40 18 19 60 E:mail nantes.marcom@temic.fr World Wide Web: http://www.temic.de 16 June 1998

S27C64A

Abstract: 27c64a-25
Contextual Info: 27C64A S ig n e tic s 6 4K C M O S U V Erasable P R O M 8K x8 Product Specification Military Application Specific Products DESCRIPTION CERDIP PIN CONFIGURATION The S ignetics 2 7C 6 4 A C M O S E P R O M is 64K -B it 5V only m em ory orga n ized as 8192 w ords of 8 bits, e m ploying advanced

A5 GNC

Abstract: 6264 EPROM STATIC RAM 6264 43256 EPROM 8253ah 2764 eprom PINOUT GR281 43256 GR27128 A1 GNC
Contextual Info: GREENWICH • INSTRUMEHTSUSA 3401 M O NROE RD • CHARLOTTE, NO 2 8 2 0 5 • 7 0 4 376 1021 • FAX 3 3 5 -8 7 0 7 • 1 - 8 0 0 - 4 7 6 - 4 0 7 0 NON-VOLATILE MEMORY •* LOW PR OFILE •* LOW POWER * RAPID POWER DOWN G R 12882 * JEDEC PIN-OUT G R3281

Contextual Info: DPS832V Dense-Pac Microsystems, Inc. ^ CMOS SRAM VERSAPAC MODULE DESCRIPTION: The DPS832V is a 66-pin Pin Grid Array PGA consisting of four 8K X 8 SRAM devices in ceramic LCC packages surface mounted on a co-fired c e ra m ic su b stra te w ith m a tc h in g th erm al

bul49d equivalent

Abstract: 12B1 ZENER 10A triac control PWM battery Charger AVS10CB1 thyristor battery charger 24v transistor equivalent table BUL49D ST62T10B6_HWD sgs Thomson Thyristor 220v ac to 5v dc 100w smps rectifier bridge 300v 30a
Contextual Info: INDEX ST Part No. Farnell Order Code Description AMST62APPST/1 AVS10CB1 AVS1ACP08 BUL49D CDDATASHXXX DBST6ST/4 EFS11 EFS1ACD EFS21 EFS2ACD FLC10-200D L6219 LPR30 MC3403N ST62-CDROM ST7-CDROM ST7MDT1-EPB/UK ST7MDT1-KIT/UK ST7MDT2-EPB/UK ST7MDT2-KIT/UK STP80NS04Z

Contextual Info: PY263/PY264 8K X 8 REPROGRAMMABLE PROM FEATURES EPROM Technology for reprogramming High Speed – 25/35/45/55 ns Commercial – 25/35/45/55 ns (Military) Low Power Operation: – 660 mW Commercial – 770 mW Military Windowed devices for reprogramming Fully TTL Compatible Inputs and Outputs

dip-p8

Abstract: PY264
Contextual Info: PY264 8K X 8 REPROGRAMMABLE PROM FEATURES EPROM Technology for reprogramming Single 5V±10% Power Supply High Speed – 35/45/55 ns Commercial – 35/45/55 ns (Military) Windowed devices for reprogramming Low Power Operation: – 660 mW Commercial – 770 mW Military

PY264

Abstract: eprom wd224 eprom 8k 24pin
Contextual Info: PY263/PY264 8K x 8 REPROGRAMMABLE PROM FEATURES EPROM Technology for reprogramming Windowed devices for reprogramming High Speed Fully TTL Compatible Inputs and Outputs – 25/35/45/55 ns Commercial – 25/35/45/55 ns (Military) Low Power Operation: – 660 mW Commercial

Contextual Info: CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM

w16 90

Abstract: 27C64 CY7C266 R1250 27C64 8k EPROM MS-020
Contextual Info: CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM