8K RAM Search Results

C144

Abstract: transistor c144 C144* datasheet C144-21 C1446 C1448 C144 sa C144 transistor C144 transistor datasheet C1447
Contextual Info: fax id: 5205 1CY 7C14 4 CY7C145 CY7C144 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 8K x 8 organization CY7C144 • 8K x 9 organization (CY7C145)

Contextual Info: PRELIMINARY WCYPRESS: CY7C024/0241 CY7C025/0251 4K x 16/18 and 8K x 16/18 Dual-Port Static RAM with Sem, Int, Busy Features • 4K x 16 organization CY7C024 • 4K x 18 organization (CY7C0241) • 8K x 16 organization (CY7C025) • 8K x 18 organization (CY7C0251)

IDT7174

Abstract: IDT71B74 L7C174PC12 L7C174PC15 L7C174PC20 L7C174PC25 L7C174WC
Contextual Info: L7C174 L7C174 DEVICES INCORPORATED 8K x 8 Cache-Tag Static RAM 8K x 8 Cache-Tag Static RAM DEVICES INCORPORATED FEATURES DESCRIPTION ❑ 8K x 8 CMOS Static RAM with 8-bit Tag Comparison Logic ❑ High Speed Address-to-MATCH — 12 ns maximum ❑ High Speed Flash Clear

C144

Abstract: A12L CY7C144 CY7C145 68-LEAD arbitration scheme
Contextual Info: 44 CY7C145 CY7C144 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features • True Dual-Ported memory cells which allow simultaneous reads of the same memory location • 8K x 8 organization CY7C144 • 8K x 9 organization (CY7C145) • 0.65-micron CMOS for optimum speed/power

data sheet at89c2051

Abstract: AT89C2051 PROGRAMMING INTERFACE AT89C51 PROGRAMMING INTERFACE AT89C2051 datasheet at89c2051 eeprom at89c2051 data sheet of at89c51 INTEGRATED CIRCUIT AT89S8252 AT89C52 AT89C2051 interrupt
Contextual Info: FLASH MCU FEATURE SUMMARY AT89C1051 AT89C2051 AT89C51 AT89LV51 AT89C52 AT89LV52 AT89C55 AT89S8252 FEATURES FLASH BYTES 1K 2K 4K 4K 8K 8K 20K 8K RAM (BYTES) 64 128 128 128 256 256 256 256 ON-CHIP EEPROM 2K SPI INTERFACE NO NO NO NO NO NO NO YES IN-SYSTEM

M37481MB-XXXSP

Abstract: M38172M4-XXXFP M38174M8-XXXFP M38103M6-XXXSP M38123M6-XXXSP mask ROM m38127m8-xxxsp M3748IE8-XXXSP 80P6N-A1 m37471
Contextual Info: # B u ilt-in A -D c o n v e rte r ty p e MICRO­ COMPUTERS Memory type Mask ROM Onetiro PROM Mask ROM Onetme PROM Memory size byte 128 M37470M2-XXXSP 8K 192 I6K 384 4K 128 192 One time PROM 16K 8K 192 Mask ROM 16K 384 One time PROM 8K 192 Mask ROM 16K 8K

Contextual Info: CY7B144 CY7B145 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • 0.8-micron BiCMOS for high per­ formance • High-speed access — 15 ns commercial — 25 ns (military) The CY7B144 and CY7B145 are high­ speed BiCMOS 8K x 8 and 8K x 9 dual­

Contextual Info: fax id: 5205 C Y 7 C 145 ”• ■ ■ ¿¡¡P: C Y 7 C 144 CYPRESS 8K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features True Dual-Ported memory cells which allow sim ultaneous reads of the same m em ory location 8K x 8 organization CY7C144 8K x 9 organization (CY7C145)

STK12C68

Abstract: STK15C68 STK16C68
Contextual Info: STK15C68 8K x 8 AutoStore nvSRAM QuantumTrap™ CMOS Nonvolatile Static RAM Obsolete - Not Recommend for new Deisgns FEATURES DESCRIPTION • Nonvolatile Storage without Battery Problems • Directly Replaces 8K x 8 Static RAM, BatteryBacked RAM or EEPROM

A12L

Abstract: A13L CY7C09159 CY7C09169
Contextual Info: 1 CY7C09159 CY7C09169 PRELIMINARY 8K/16K x 9 Synchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • Two Flow-Through/Pipelined devices — 8K x 9 organization CY7C09159

Logic diagram for asynchronous FIFO

Abstract: 108-PIN
Contextual Info: m 3ÖE D INTEGRATED DEVICE 4Ö2S771 GG072b2 5 Bi IDT 8K x 36 FIFO MODULE IDT7M2001 Integrated Device Technology, Inc. FEATURES: • First-In/First-Out memory module • Asynchronous and simultaneous read and write • Configurable as 8K x 36 or 16K x 18 unidirectional or 8K

Contextual Info: ST90E20 - ST90E21 - ST90E23 ST9 8K EPROM HCMOS MICROCONTROLLER PRELIMINARY DATA MAIN FEATURES * Complete Microcontroller, 8K bytes of EPROM, 256 bytes of register file with 224 general purpose registers available as RAM, accumulator or index pointers. The on-chip EPROM can be programmed

Contextual Info: L7C185 8K x 8 Static RAM Features_ Description □ 8K by 8 Static RAM with chip select The L7C185 is a high-performance, low-power CMOS static RAM. The powerdown, output enable storage circuitry is organized as 8,192 □ Auto-Powerdown design

STK15C68

Contextual Info: STK15C68 8K x 8 AutoStore nvSRAM High Performance CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Nonvolatile Storage Without Battery Problems • Directly Replaces 8K x 8 static RAM, Battery Backed RAM or EEPROM • 25ns, 35ns and 45ns Access Times

A12L

Abstract: A13L CY7C09159V CY7C09169V
Contextual Info: 1 CY7C09159V CY7C09169V PRELIMINARY 3.3V 8K/16K x 9 Synchronous Dual Port Static RAM Features • True Dual-Ported memory cells which allow simultaneous access of the same memory location • Two Flow-Through/Pipelined devices — 8K x 9 organization CY7C09159V

Contextual Info: HITACHI/ NCU/MPU blE D • L4 ^ b 2 0 4 D0372fl4 BflM B I H I T 3 HITACHI 14 H8/300 FAM H8/311 (*3) H8/322 H8/323 H 8/324 H8/325 H8/326 ROM 10K 8K 16K 24K 32K 8K RAM 256B 256B 512B IK IK 256B EEPRO M 8K - - - - - D u al P o rt R A M - - - - - - E P R O M D e v ic e

CY7C09159

Abstract: CY7C09169 Micron
Contextual Info: fax id: 5218 51 CY7C09159 CY7C09169 ADVANCED INFORMATION 8K/16K x 9 Synchronous Dual Port Static RAM Features • True Dual-Ported memory cells which allow simultaneous access of the same memory location • 2 Flow-Through/Pipelined devices — 8K x 9 organization CY7C09159

A12L

Abstract: A13L CY7C09159 CY7C09169 AN 5218
Contextual Info: fax id: 5218 51 CY7C09159 CY7C09169 PRELIMINARY 8K/16K x 9 Synchronous Dual-Port Static RAM Features • True Dual-Ported memory cells which allow simultaneous access of the same memory location • 2 Flow-Through/Pipelined devices — 8K x 9 organization CY7C09159

Contextual Info: STK15C68 8K x 8 AutoStore nvSRAM High Performance CMOS Nonvolatile Static RAM SlfflTEK FEATURES DESCRIPTION • Nonvolatile Storage Without Battery Problems • Directly Replaces 8K x 8 static RAM, Battery Backed RAM or EEPROM • 25ns, 35ns and 45ns Access Times

Contextual Info: STK15C68 SimTEK 8K x 8 AutoStore nvSRAM High Performance CMOS Nonvolatile Static RAM FEATURES DESCRIPTION • Nonvolatile Storage Without Battery Problems • Directly Replaces 8K x 8 static RAM, Battery Backed RAM or EEPROM • 25ns, 35ns and 45ns Access Times

MN103SFE4K

Contextual Info: MN103SE4 Series MN103SE4D Type MN103SE4G 64K ROM byte MN103SE4K MN103SFE4G Mask ROM Internal ROM type 128K 256K 128K 256K 8K 4K 8K 4K RAM (byte) Package (Lead-free) Minimum Instruction Execution Time MN103SFE4K FLASH LQFP080-P-1414A LQFP080-P-1414A (Under development)

Contextual Info: L7C185 8K x 8 Static RAM Low Power DEVICES INCORPORATED DESCRIPTION FEATURES □ 8K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 12 ns maximum □ Low Power Operation

Contextual Info: 8K x 112 WRITABLE CO NTRO L STORE STATIC RAM MODULE § advance in ^ trmation IDT7MB6042 Integrated Device Te ch n olo sy Inc FEATURES: • 8K x 112 high-performance Writable Control Store WCS • Serial Protocol Channel (SPC )—reading, writing and Interrogation

XM24

Contextual Info: DS1485/DS1488 DALLAS SEMICONDUCTOR DS1485/DS1488 RAMified Real Time Clock 8K x 8 FEATURES PIN ASSIGNMENT • Upgraded IBM AT computer dock/calendar with 8K x 8 extended RAM oer C • Totally nonvolatile with over 10 years of operation in the absence of power