8A 102 Search Results

50mA fuse 32ma

Abstract: fuse 2a 250v FUSE 250V 8A conquer fuse fuse 7.5A ,250V, pigtail
Contextual Info: CONQUER Miniature Fuse Type GSL/GST GSL GST-A 5ØX20mm Time-Lag Glass Tube Fuse Series Approval GSL UL Listed 10mA~8A CSA Certified 10mA~8A PSE 1A~5A 125V ; 1A~8A(250V) GST (With Pig-Tail) UL Listed 10mA~8A CSA Certified 10mA~8A PSE 1A~8A Electrical Characteristic

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSS230R4 JANSR2N7400 igss
Contextual Info: JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 00 /Subject (8A, 200V, 0.440 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 8A, 200V, 0.440

2E12

Abstract: FSL130R4 JANSR2N7395 Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 95 /Subject (8A, 100V, 0.230 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 8A, 100V, 0.230

FL14KM-8A

Abstract: smps inverter
Contextual Info: MITSUBISHI POWER MOSFET MITSUBISHI NchNch POWER MOSFET FL14KM-8A FL14KM-8A HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE FL14KM-8A OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 f 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2

Contextual Info: M32C/8A Group RENESAS MCU 1. REJ03B0213-0111 Rev.1.11 Mar 31, 2009 Overview 1.1 Features The M32C/8A Group is a single-chip control MCU, fabricated using high-performance silicon gate CMOS technology, embedding the M32C/80 Series CPU core. The M32C/8A Group is housed in 144-pin and 100-pin

M308A0SGP

Abstract: TDZ TR 18 you ad electronics PLQP0100KB-A PLQP0144KA-A FP-100U
Contextual Info: M32C/8A Group REJ03B0213-0110 Rev.1.10 Jul 15, 2007 RENESAS MCU 1. Overview 1.1 Features The M32C/8A Group is a single-chip control MCU, fabricated using high-performance silicon gate CMOS technology, embedding the M32C/80 Series CPU core. The M32C/8A Group is housed in 144-pin and 100-pin

TBST SYSTEMS

Contextual Info: SDRAM Rev.1.1 Jun. '98 MITSUBISHI LSIs 64M bit Synchronous DRAM M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 2097152-WORD x 8-BIT) M2V64S40BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 1048576-WORD x 16-BIT)

M2V64S40BTP

Abstract: M2V64S40BTP-7 M2V64S20BTP M2V64S20BTP-7 M2V64S30BTP M2V64S30BTP-7
Contextual Info: SDRAM Rev.1.2 Apr. '99 MITSUBISHI LSIs 64M bit Synchronous DRAM M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 2097152-WORD x 8-BIT) M2V64S40BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 1048576-WORD x 16-BIT)

M2V64S20BTP

Abstract: M2V64S20BTP-7 M2V64S30BTP M2V64S30BTP-7 M2V64S40BTP M2V64S40BTP-7
Contextual Info: SDRAM Rev.1.2 Apr. '99 MITSUBISHI LSIs 64M bit Synchronous DRAM M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 2097152-WORD x 8-BIT) M2V64S40BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 1048576-WORD x 16-BIT)

Contextual Info: SDRAM Rev.1.0 May '98 64M bit Synchronous DRAM MITSUBISHI LSls M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP-7,-7L,-8,-8L,-8A,-10,-1 OL (4-BANK x 2097152-WORD x 8-BIT) M2V64S40BTP-7,-7L,-8,-8L,-8A,-10,-1 OL (4-BANK x 1048576-WORD x 16-BIT)

Contextual Info: JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 8A, 200V, rDS ON = 0.440Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

1E14

Abstract: 2E12 FSS230D FSS230D1 FSS230D3 FSS230R FSS230R1 FSS230R3 relay 12v 200 ohm Rad Hard in Fairchild for MOSFET
Contextual Info: FSS230D, FSS230R 8A, 200V, 0.440 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 8A, 200V, rDS ON = 0.440Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

M308A0SGP

Abstract: M308A M308A3SGP M308A5SGP PLQP0100KB-A PLQP0144KA-A
Contextual Info: APPLICATION NOTE M32C/8A Group Program Download Function 1. Abstract This document describes methods of downloading a user program into the internal RAM area in M32C/8A using the program download function and executing the downloaded user program in internal RAM.

2N6796

Abstract: TB334
Contextual Info: 2N6796 Data Sheet December 2001 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET Features • 8A, 100V The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor

Contextual Info: EVALUATION KIT AVAILABLE MAX15108A High-Efficiency, 8A, Current-Mode Synchronous Step-Down Switching Regulator General Description The MAX15108A high-efficiency, current-mode, synchronous step-down switching regulator with integrated power switches delivers up to 8A of output current. The

Contextual Info: JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 8A, 100V, rDS ON = 0.230Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

2N6796

Abstract: TB334
Contextual Info: 2N6796 Data Sheet November 1998 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET • 8A, 100V • rDS ON = 0.180Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device

RFD8P06LESM9A

Abstract: m041 mosfet motor dc 48v Logic Level p-Channel Power MOSFET RFD8P06LE RFD8P06LESM RFP8P06LE 08E4 30e2
Contextual Info: RFD8P06LE, RFD8P06LESM, RFP8P06LE Data Sheet July 1999 8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET • 8A, 60V Formerly developmental type TA49203. • rDS ON = 0.300Ω • 2kV ESD Protected • Temperature Compensating PSPICE Model

Application of irf840

Abstract: TRANSISTOR mosfet IRF840 datasheet irf840 mosfet diode 400V 4A irf840 equivalent power supply IRF840 APPLICATION IRF840 MOSFET irf840 power supply transistor irf840 IRF840 and its equivalent
Contextual Info: IRF840 Data Sheet January 2002 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Features • 8A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

8A60V

Abstract: RFD8P06E RFD8P06ESM RFD8P06ESM9A RFP8P06E TB334 bv254
Contextual Info: RFD8P06E, RFD8P06ESM, RFP8P06E Data Sheet January 2002 8A, 60V, 0.300 Ohm, P-Channel Power MOSFETs Features • 8A, 60V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives

FA8A

Contextual Info: 19-5918; Rev 0; 6/11 High-Efficiency, 8A, Current-Mode Synchronous Step-Down Switching Regulator with VID Control Features The MAX15109 high-efficiency, current-mode, synchronous step-down switching regulator with integrated power switches deliver up to 8A of output current. This

TA17425

Abstract: IRF440 TB334
Contextual Info: IRF440 Data Sheet March 1999 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET • 8A, 500V Ordering Information PACKAGE TO-204AE • rDS ON = 0.850Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds

sec irf840

Abstract: ISL9R860P2 R860P2
Contextual Info: [ /Title ISL9R 860P2 /Subjec t (8A, 600V Stealth Diode) /Autho r () /Keyw ords (8A, 600V Stealth ™ Diode, Intersil Corpor ation, semico nducto r, to220ac) /Creato r () /DOCI NFO pdfmar k [ /Page Mode /UseO utlines /DOC ISL9R860P2 TM Data Sheet September 2000

Contextual Info: ^ ^ - . o . p,n « 11 64M bit S y n c h ro n o u s DRAM SDRAM Rev.1.2 Apr. '99 MITSUBISHI LSIs M2V64S20BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 4194304-WORD x 4-BIT) M2V64S30BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 2097152-WORD x 8-BIT) M2V64S40BTP-7,-7L,-8,-8L,-8A,-10,-10L (4-BANK x 1Q48576-WORD x 16-BIT)