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    88N30P Price and Stock

    IXYS Corporation

    IXYS Corporation IXTQ88N30P

    MOSFETs 88 Amps 300V 0.04 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTQ88N30P 259
    • 1 $16.10
    • 10 $9.13
    • 100 $9.13
    • 1000 $9.09
    • 10000 $9.09
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    Newark IXTQ88N30P Bulk 1
    • 1 $17.07
    • 10 $14.86
    • 100 $9.67
    • 1000 $8.83
    • 10000 $8.83
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    TTI IXTQ88N30P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $8.50
    • 10000 $8.50
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    TME IXTQ88N30P 264 1
    • 1 $14.75
    • 10 $10.46
    • 100 $8.60
    • 1000 $7.81
    • 10000 $7.81
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    IXYS Corporation IXFH88N30P

    MOSFETs 88 Amps 300V 0.04 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFH88N30P 175
    • 1 $19.41
    • 10 $13.15
    • 100 $13.15
    • 1000 $11.25
    • 10000 $11.25
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    TTI IXFH88N30P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $11.10
    • 10000 $11.10
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    TME IXFH88N30P 1
    • 1 $16.93
    • 10 $14.24
    • 100 $10.93
    • 1000 $10.75
    • 10000 $10.75
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    IXYS Corporation IXTH88N30P

    MOSFETs 88 Amps 100 V 0.04 Ohms Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTH88N30P 82
    • 1 $16.60
    • 10 $9.46
    • 100 $9.46
    • 1000 $9.46
    • 10000 $9.46
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    TTI IXTH88N30P Tube 210 30
    • 1 -
    • 10 -
    • 100 $9.27
    • 1000 $8.15
    • 10000 $8.15
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    TME IXTH88N30P 1
    • 1 $10.84
    • 10 $9.74
    • 100 $8.88
    • 1000 $8.11
    • 10000 $8.11
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    IXYS Corporation IXFK88N30P

    MOSFETs 88 Amps 300V 0.04 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFK88N30P 47
    • 1 $20.57
    • 10 $14.09
    • 100 $11.92
    • 1000 $11.92
    • 10000 $11.92
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    Newark IXFK88N30P Bulk 1
    • 1 $21.06
    • 10 $17.25
    • 100 $11.61
    • 1000 $11.27
    • 10000 $11.27
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    TTI IXFK88N30P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $12.07
    • 10000 $12.07
    		Buy Now
    TME IXFK88N30P 1 1
    • 1 $18.62
    • 10 $13.77
    • 100 $10.38
    • 1000 $10.38
    • 10000 $10.38
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    IXYS Corporation IXTT88N30P

    MOSFETs 88 Amps 300V 0.04 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTT88N30P
    • 1 $18.74
    • 10 $10.73
    • 100 $10.73
    • 1000 $10.25
    • 10000 $10.25
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    TTI IXTT88N30P Tube 300 30
    • 1 -
    • 10 -
    • 100 $10.72
    • 1000 $9.37
    • 10000 $9.37
    		Buy Now
    TME IXTT88N30P 34 1
    • 1 $14.69
    • 10 $11.32
    • 100 $10.76
    • 1000 $10.76
    • 10000 $10.76
    		Buy Now
    Find more 88N30P price and stock on Findchips.com

    88N30P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    88N30P

    Abstract: A220D 88N30
    Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFH 88N30P IXFK 88N30P VDSS ID25 RDS on trr = 300 V = 88 A Ω = 40 mΩ ≤ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300


    Original     		88N30P O-247 88N30P A220D 88N30 PDF

    88N30

    Contextual Info: PolarHTTM Power MOSFET IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P = 300 V = 88 A ≤ 40 mΩ Ω VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		88N30P O-247 88N30P 88N30 PDF

    88N30

    Abstract: IXTH88N30P DSA003702
    Contextual Info: IXTH 88N30P IXTK 88N30P IXTQ 88N30P PolarHTTM Power MOSFET VDSS ID25 RDS on = 300 V = 88 A Ω = 40 mΩ N-Channel Enhancement Mode For Plasma Display Applications TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		88N30P 88N30P O-247 O-247 O-264 IXTH88N30P 88N30 DSA003702 PDF

    88n30p

    Abstract: 88N30 IXTQ88N30P
    Contextual Info: PolarHTTM Power MOSFET IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P VDSS ID25 = 300 V = 88 A Ω = 40 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) D (TAB) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR


    Original     		88N30P 88N30P O-247 O-264 88N30 IXTQ88N30P PDF

    88N30

    Abstract: 88N30P
    Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFH 88N30P IXFK 88N30P VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		88N30P O-247 88N30 88N30P PDF

    88N30

    Contextual Info: PolarHTTM Power MOSFET IXTH 88N30P IXTK 88N30P VDSS ID25 RDS on = 300 V = 88 A Ω = 40 mΩ N-Channel Enhancement Mode For Plasma Display Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		88N30P 88N30P O-247 O-264 88N30 PDF

    88N30

    Abstract: 88N30P
    Contextual Info: IXTH 88N30P IXTT 88N30P PolarHTTM Power MOSFET RDS on VDSS = 300 ID25 = 88 Ω = 40 mΩ V A N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM 300


    Original     		88N30P O-247 88N30 88N30P PDF

    88N30P

    Abstract: 88N30 IXTQ88N30P ixth IXTH88N30P
    Contextual Info: PolarHTTM Power MOSFET IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 300 V Maximum Ratings VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		88N30P O-247 88N30P 88N30 IXTQ88N30P ixth IXTH88N30P PDF

    88N30P

    Abstract: IXTQ88N30P 88N30
    Contextual Info: Advanced Technical Information IXTK 88N30P IXTQ 88N30P PolarHTTM Power MOSFET VDSS ID25 RDS on = 300 V = 88 A Ω = 40 mΩ N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		88N30P O-264 88N30P IXTQ88N30P 88N30 PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p PDF

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Contextual Info: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP PDF