88822 Search Results

SEEQ 52B33

Abstract: 52B23 memory 52B13 WE VQE 11 E WE VQE 24 E 19Jl WE VQE 23 E SEEQ 52B23 5252 S 52B33
Contextual Info: v. O c <F V 000701 r ^ %>' ,J> 7 52 B 13/ 52 B 23/ 52B 33 52B 13H / 52 B 23 H / 52 B 33H Electrically Erasable RO M March 1983 P R E L IM IN A R Y D A T A S H E E T Features • Input Latches ■ ■ ■ ■ ■ ■ ■ ■ th e o th e r d e v ic e s in th e fa m ily re q u ire o n ly a T TL

Contextual Info: Freescale 2013 Summary Plan Description Freescale Benefits: Health, Wellness, Life, Savings and More U.S. Active, Expatriate and Assignee Benefits Effective January 1, 2013 Introduction A Rewards Package to Fit Your Lifestyle Welcome to Freescale Rewards, a competitive benefits package that enhances your

Contextual Info: 090 PUL-SI www.vishay.com Vishay BCcomponents Aluminum Capacitors Power Ultra Long Life Snap-In FEATURES • • • • • 158 PUL-SI miniaturized 090 PUL-SI • • • 156 PUM-SI 85 °C Fig. 1 APPLICATIONS • General purpose, industrial, telecom and audio/video

Contextual Info: 158 PUL-SI www.vishay.com Vishay BCcomponents Aluminum Capacitors Power Ultra Long Life Snap-In FEATURES • Useful life: 5000 h at +105 °C • High ripple current capability • Keyed polarity version available • Polarized aluminum electrolytic capacitors, non-solid

32107

Abstract: SST27SF256 oasis TTL 7452 A115 32-PIN A103 A114 Tekelec TA 27721
Contextual Info: 256 Kilobit 32K x 8 SuperFlash MTP SST27SF256 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)

76223

Contextual Info: 158 PUL-SI Vishay BCcomponents Aluminum Capacitors Power Ultra Long Life FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte Pb-free Available • Large types, very small dimensions, cylindrical aluminum case, insulated with a blue sleeve

Contextual Info: 158 PUL-SI www.vishay.com Vishay BCcomponents Aluminum Capacitors Power Ultra Long Life Snap-In FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Large types, very small dimensions, cylindrical aluminum case, insulated with a blue sleeve

SST29EE512

Abstract: id9301
Contextual Info: 512 Kilobit 64K x8 Page-Mode EEPROM SST29EE512 / SST29LE512 / SST29VE512 Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for SST29EE512 – 3.0-3.6V for SST29LE512 – 2.7-3.6V for SST29VE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)

TA 7644 BF

Abstract: cmos power TCP 8108 NEXUS FLASH ERASE oasis TCP 8108 32-PIN F01A SST31LH041 830049
Contextual Info: 4 Megabit Flash + 1 Megabit SRAM ComboMemory SST31LH041 Advance Information FEATURES: • Organized as 512K x 8 Flash + 128K x 8 SRAM • Latched Address and Data for Flash • Single 3.0-3.6V Read and Write Operations • Flash Fast Sector Erase and Byte Program:

Contextual Info: iiili 8 Megabit 1M x 8-Bit Multi-Purpose Flash _ SST39VF080Q_ Advance Information FEATURES: • Organized as 1M x 8 • Latched Address and Data • Single 2.7-3.6V Read and Write Operations • Fast Sector Erase and Byte Program:

Contextual Info: 21Ü 16 Megabit FlashBank Memory SST38UF166 Advance Information FEATURES: • • • Single 2.2-2.8V Read and Write Operations Read Access Time Separate Memory Banks for Code or Data - - Latched Address and Data Superior Reliability End of Write Detection

Contextual Info: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/

Contextual Info: 512 Kilobit 64K x 8 SuperFlash MTP SST37VF512 Prelim inary Specifications FEATURES: • • 2.7-3.6V Read Operation Fast Programming Operation Superior Reliability - - Features Electrical Erase Endurance: At least 1000 Cycles Greater than 100 years Data Retention

1/CHN 326

Contextual Info: 21Ü 2 Megabit 256K x 8 Multi-Purpose Flash SST39SF020 Data Sheet FEATURES: • • • Organized as 256 K X 8 Fast Sector Erase and Byte Program: Single 5.0V Read and Write Operations - Superior Reliability - • • Active Current: 20 mA (typical) Standby Current: 10 |iA (typical)

atmel AT89C52 PROGRAMMER

Abstract: MCS-48 PLCC-44 SST89C54 SST89C58 SST89C59 mcs-48 users manual MCS48 instruction set interrupts in embedded system at89c52 18H-1FH
Contextual Info: 1 2 3 4 5 6 FlashFlex51 MCU SST89C54 / SST89C58 / SST89C59 Multi-Purpose 8051 Compatible Microcontroller Unit with Embedded SuperFlash Memory for Flexibility 7 8 9 10 11 12 13 User’s Manual Preliminary 14 15 16 1998 Silicon Storage Technology, Inc. The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. FlashFlex51 is a trademark of Silicon Storage Technology, Inc.

TZ1114

Abstract: chip diagram of ram chip 6116 IDT6116 6116 static RAM chip 6116 ram 2k cewe EZ
Contextual Info: LOGIC DEVICES INC 2bE D • SSbSTOS OOOlOOfl 5 M _ _ _ _ _ _ 2K X 8 Static RAM T ~ 9 è ~2 3 - /2 L6116/L6116L Low Power DESCRIPTION FEATURES Q 2K x 8 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design

sst39vf040

Contextual Info: 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 Data Sheet FEATURES: • Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8 • Single Voltage Read and Write Operations

Contextual Info: 2 Mbit / 4 Mbit / 8 Mbit x16 Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A Preliminary Specifications FEATURES: • Organized as 128K x16 / 256K x16 / 512K x16 • Single Voltage Read and Write Operations

Contextual Info: 8 Mbit / 16 Mbit x8 Multi-Purpose Flash SST39LF080 / SST39LF016 / SST39VF080 / SST39VF016 Data Sheet FEATURES: • Organized as 1M x8 / 2M x8 • Latched Address and Data • Single Voltage Read and Write Operations - 3.0-3.6V for SST39LF080/016 - 2.7-3.6V for SST39VF080/016

Contextual Info: 512 Kilobit 64K x8 Page-Mode EEPROM SST29EE512A / SST29LE512A / SST29VE512A Data Sheet FEATURES: • Single Voltage Read and Write Operations – 5.0V-only for SST29EE512A – 3.0-3.6V for SST29LE512A – 2.7-3.6V for SST29VE512A • Superior Reliability

mcm6830

Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Contextual Info: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories

49lf004

Abstract: f291 SST49LF004 XRA15218N 810E FFC00000H FFF80000H 3932 0xFFBC0100 T-1406
Contextual Info: 4 Megabit Firmware Hub SST49LF004 Advance Information FEATURES: • Firmware Hub for Intel 810, 810E, 820, 840 Chipsets • 4Mbits SuperFlash memory array for code/data storage – SST49LF004: 512K x8 4 Mbit • Flexible Erase Capability – Uniform 4 KByte sectors

PHILIPS MKT 373

Abstract: mkt-hq 370 - ph 100v mkt 370 philips mkt hq 371 ph capacitor 0,1 k 250 mkt philips mkt hq 372 capacitor MKT Philips Philips 2222-370 capacitor 0.022 k 250 MKT philips philips HQ 630 mkt 0.047 capacitor
Contextual Info: Philips Components Product specification Metallized polyester film capacitors MKT 370/371/372/373 MKT RADIAL POTTED CAPACITORS 2222 370 2222 371 PITCH 5/7.5/10/15/22.5/27.5 mm 2222 373 2222 372 DR931930 Fig.1 Simplified outlines. FEATURES • Low-inductive wound cell of

oasis

Abstract: SST39VF400 SST39VF400 read code
Contextual Info: 4 Megabit 256K x 16-Bit Multi-Purpose Flash f SST39VF400 r Advance Information FEATURES: • Organized as 256 K X 16 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - • • 2 KWord sectors Uniform 32 KWord blocks Fast Read Access Time: