86PIN Search Results

Contextual Info: 86PIN PLASTIC TSOP II (400mil) detail of lead end 86 44 F G R P L S 1 E 43 A H I J S C D M N L S M K B NOTES 1. Each lead centerline is located within 0.13 mm of its true position (T.P.) at maximum material condition. 2. Dimension "A" does not include mold flash, protrusions or gate

Contextual Info: HYM41V33100BTWG 1Mx32, 1Mx32 based, PC133 D E S C R I PT I ON The H ynix H Y M 4 V 3 3 10O BT W G CMOS Syn chronous DRAMs Series in 4 0 0 m i l are 1Mx32bits 86pin TSOP-II 0.1uF decoupling capacitors per each SDRAM The Hyundai H Y M 4 V 3 3 1OOBTWG memory. The Hyundai

Contextual Info: 1Mx32 bits PC133 SDRAM AIMM based on 1Mx32 SDRAM with LVTTL, 2 banks & 4K Refresh HYM4V33100BTWG Series DESCRIPTION The Hynix HYM4V33100BTWG Series are 1Mx32bits Synchronous DRAM Modules. The modules are composed of one 1Mx32bits CMOS Synchronous DRAMs in 400mil 86pin TSOP-II package, on a 132pin glass-epoxy printed circuit board. Two 0.22uF and one

SM81600E

Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
Contextual Info: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

Contextual Info: SDRAM AS4SD2M32 512K x 32 x 4 Banks 64-Mb PIN ASSIGNMENT (Top View) Synchronous SDRAM 86-Pin TSOPII FEATURES • Full Military temp (-55°C to 125°C) processing available • Configuration: 512K x 32 x 4 banks • Fully synchronous; all signals registered on positive

IS42S32400D

Abstract: 42S32400D is42s32400d-6bli IS42S32400D-7TLI
Contextual Info: IS42S32400D 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 125, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge MARCH 2009 OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed

dynamic ram binary cell

Abstract: QBA-1 qab1
Contextual Info: VIS Preliminary VG36643241AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 words x 32 bits x 4 banks. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only

MT48LC4M32B2P

Abstract: MT48LC4M32B2TG-7 MT48LC4M32B2 128MbSDRAMx32
Contextual Info: 128Mb: x32 SDRAM Features Synchronous DRAM MT48LC4M32B2 – 1 Meg x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdram Features Figure 1: • PC100 functionality • Fully synchronous; all signals registered on positive

MT48LC2M32B2P

Abstract: MT48LC2M32B2 MT48LC2M32B2P-7 MT48LC2M32B2TG 2M32B2 *48LC2M32 H9612
Contextual Info: 64Mb: x32 SDRAM Features Synchronous DRAM MT48LC2M32B2 – 512K x 32 x 4 banks For the latest data sheet, refer to Micron’s Web site Features Table 1: • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock

09005aef811ce1d5

Abstract: MT48LC2M32B2 MT48LC2M32B2TG-7G
Contextual Info: 64Mb: x32 SDRAM SYNCHRONOUS DRAM MT48LC2M32B2 - 512K x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdramds FEATURES • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock

MT48LC2M32B2

Contextual Info: 64Mb: x32 SDRAM SYNCHRONOUS DRAM MT48LC2M32B2 - 512K x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/sdramds FEATURES • PC100 functionality • Fully synchronous; all signals registered on positive edge of system clock

AT49LD3200

Contextual Info: Features • 3.0V to 3.6V Read/Write • Burst Read Performance • • • • • • • • • • – <100 MHz RAS Latency = 2, CAS Latency = 6 , 10 ns Cycle Time tSAC = 7 ns – <75 MHz (RAS Latency = 2, CAS Latency = 5), 13 ns Cycle Time tSAC = 8 ns

MR27V3266D

Abstract: LA5A6
Contextual Info: OKI Semiconductor Preliminary MR27V3266D 2M x16 / 1M x32 Synchronous OTP ROM DESCRIPTION The MR27V3266D is a 32Mbit One Time Programmable Synchronous Read Only Memory whose configuration can be electrically switched between 2,097,152 x16bit word mode and 1,048,576 x32bit(double word mode) by

Contextual Info: TVP5160EVM User’s Guide SLEU063 – March 2005 TVP5160EVM User’s Guide Digital Video Department 1 2 3 4 5 6 7 8 9 10 Contents Functional

IS42VM81600E

Abstract: IS42VM16800E IS42VM32400E-75TL IS42VM16800E-75BLI
Contextual Info: IS42VM81600E / IS42VM16800E / IS42VM32400E IS45VM81600E / IS45VM16800E / IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES JUNE 2011 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

DQM31

Contextual Info: 17-3-b2.fm Page 31 Saturday, August 28, 1999 9:57 PM NE W PR OD UCTS • MB 81 x x 64 3 24 2B • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • •

IS42R32200C1

Contextual Info: ISSI IS42R32200C1 512K Bits x 32 Bits x 4 Banks 64-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 133, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single 2.5V power supply

TSOP 86 Package

Abstract: tsop 86
Contextual Info: SMALL OUTLINE L-LEADED PACKAGE 86 PIN PLASTIC FPT-86P-M01 86-pin plastic TSOP II Lead pitch 0.50mm Package width 400mil Lead shape Gullwing Sealing method Plastic mold (FPT-86P-M01) 86-pin plastic TSOP (II) (FPT-86P-M01) 86 44 Details of "A" part 0.25(.010)

MR27V6466F

Abstract: MR27V6466FTA
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

MD56V62320

Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET MEMORY 4 x 5 1 2 K x 32 BIT SYNCHRONOUS DYNAMIC RAM MB811643242A-125/-100/-84/-67 CMOS 4-BANK x 524,288-WORD x 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB811643242A is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

PU86

Contextual Info: QuickLogic PolarPro Device Data Sheet — 86-Pin TFBGA QL1P100 •••••• Combining Low Power, Performance, Density, and Embedded RAM • Quadrant-based segmentable clock networks Device Highlights  16 quad clock networks per device Low Power Programmable Logic

2MX16X4

Abstract: IS42S32400AL
Contextual Info: IS42S81600AL, IS42LS81600AL IS42S16800AL, IS42LS16800AL IS42S32400AL, IS42LS32400AL 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT LOW-POWER SYNCHRONOUS DRAM ISSI PRELIMINARY INFORMATION SEPTEMBER 2003 • Clock frequency: 133, 100, MHz OVERVIEW ISSI's 128Mb Low - Power Synchronous DRAM achieves

QUICKLOGIC SDIO Host

Contextual Info: PolarPro Solution Platform Family Data Sheet •••••• Family of Solution Platforms Integrating Low Power Programmable Fabric and Embedded SRAM Platform Highlights Flexible Programmable Fabric • 8 to 240 customizable building blocks CBBs (see