852201 Search Results

KM658128

Contextual Info: m s« KM658128 SAMSUNG Semiconductor 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM May 1991 FEATURES DESCRIPTION • Fast Access Time: — CE Access Tim e. 80, 100, 120ns Max — Cycle Time Random Read/Write Cycle Time .130, 160, 190ns (Max)

KM41C1000

Abstract: 30-pin simm memory KMM591000 30-pin simm memory dynamic IRP 745 km41c SIMM 30-pin KMM491000-10 KMM591000-10 KMM491000-12
Contextual Info: S AM SUN G K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ " W Semiconductor 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod­ ules. The ninth bit is generally used for parity and

Contextual Info: ¡R samsung * 0 Semiconductor KM75C102A CMOS FIFO WITH PROGRAMMABLE FLAG Preliminary FEATURES DESCRIPTION • Flrst-lrvFlrst-Out Dual Port Memory — 1Kx9 The 75C102A is a 1K x 9 dual port memory that imple­ ments a special First-In-First-Out FIFO algorithm that

tl 8819

Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES - U.S.A. Northwest Southwest Memory products Southwest (Microproducts) 2 2 8 3 7 Ventura Blvd. Suite 305 W oodland Hills, C A 913 6 7 (8 1 8 )3 4 6 -6 4 1 6 FAX: (8 1 8 )3 4 6 -6 6 2 1 2 1 0 2 Business Center Drive Suite 169

str 8045

Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES - U.S.A. Southwest Memory products Southwest (Microproducts) 22837 Ventura Blvd. Suite 305 Woodland Hills, CA 91367 (818)346-6416 FAX: (818)346-6621 2102 Business Center Drive Suite 169 Irvine, CA 92715 (714) 253-5795

KS84C21

Abstract: MEC 2MHZ SS52M 430-0144
Contextual Info: KS84C21/C22 ¡ H SAM SUNG DYNAMIC RAM CONTROLLERS Preliminary Semiconductor September 1988 FEATURES PRODUCT OVERVIEW • Direct drive for 256K, 1Mbit and 4Mbit DRAMs The Samsung KS84C21 and KS84C22 are high perform­ ance dynamic RAM DRAM controllers. They simplify

68030

Contextual Info: KS84C31/32 FEATURES 40 MHz operation Easy Interface to Motorola and Intel CPUs 68040/68030 burst mode operation i486 burst mode operation Page, static column and nibble mode accesses Interleaved and non-lnterleaved accesses Synchronous and asynchronous operation

KM75C104A

Contextual Info: SK SAMSUNG % 0 Semiconductor 0« K M 7 5 C 1 4 A CMOS FIFO WITH PROGRAMMABLE FLAG Preliminary DESCRIPTION FEATURES The 75C104A is a 4K x 9 dual port memory that imple­ ments a special First-In-First-Out FIFO algorithm that loads and empties data on a first-in-first-out basis. Sev­

PM55L-048

Abstract: LW - 6052 Clock Display LED PM35L-048 PM35S-048 5 pin relay 12vdc 4088 UP 5035 LCD METER diagram wiring mitsubishi elevator digital dC Ammeter stu 4465 OMRON plc programming manual ZEN-10C1DR-D-V2
Contextual Info: ND3% BASE1 XXXX7196-1888-1-P 1888 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 19-07-11 Hour: 11:01 TS:TS date TS time PANEL INSTRUMENTATION Find Datasheets Online ANALOG 2% CENTURY PANEL METERS ROUND AND RECTANGULAR PANEL METERS Attractive, easy-to-read meters in black

EN 60825-1

Abstract: 100BASE-FX 852201
Contextual Info: 1 SFP Modules 100Base-FX LC 70 ELECTRICAL SUBASSEMBLY DATA LASER DATA/ TX_DISABLE I/O-SYSTEM <_15 mm _> <_13,35 mm _> <_ 56,6 mm _> TX < 6,25 > RX TX_FAULT 0 (1) (2) MOD_DEF

Contextual Info: « e - K SAM SUN G Semiconductor 7 M 5 1 C 3 A CMOS FIFO WITH PROGRAMMABLE FLAG Preliminary FEATURES DESCRIPTION • Flrst-ln-Flrst-Out Dual Port Memory — 2 Kx 9 The 75C103A is a 2K x 9 dual port memory that imple­

5A/12DIOR-DRC

Contextual Info: JAM Ca '! « S A M S U N G K S 8 4 E C 3 0 DYNAMIC RAM CONTROLLER Sen,¡conductor M archi 991 FEATURES PRODUCT OVERVIEW The Samsung KS84EC30 is a high performance DRAM controller designed for high speed DRAM arrays up to 4Mbytes in size. It simplifies the interface between the

Contextual Info: KS84C31/32 DYNAMIC RAM CONTROLLERS FEATURES PRODUCT OVERVIEW • 40 MHz operation The Samsung KS84C31 and KS84C32 are high perform­ ance dynamic RAM DRAM controllers. They simplify the interface between the microprocessor and the DRAM array, while also significantly reducing the required de­

I486

Abstract: KS84C31 KS84C32 MC68030 MC68040 RSC18 schematic diagram samsung led
Contextual Info: DYNAMIC RAM CONTROLLERS KS84C31/32 PRODUCT OVERVIEW FEATURES The Samsung KS84C31 and KS84C32 are high perform­ ance dynamic RAM DRAM controllers. They simplify the interface between the microprocessor and the DRAM array, while also significantly reducing the required de­

Contextual Info: 852-103 4 8-Port 100BASE-TX + 2-Slot 100BASE-FX Industrial Switch 378 10 9 8 3 1 Primary Power LED 2 Redundant Power LED 3 Alarm LED 4 TX port 100 Mbps LED 5 TX port LNK/ACT LED 6 10/100 Base-TX ports 8 7 100 Base-FX LC Fiber slots (SFP-type) (2) 8 Fiber port Offline LED (2)

KM68B65P-20

Contextual Info: 0% KM68B65 Q S SAM SUNG Semiconductor 8K x 8 BIT ULTRA-FAST BiCMOS STATIC RAM FEATURES DESCRIPTION • Ultra-Fast Access Times — Commercial: 12ns, 15ns, 20ns The KM68B65 is a 65,536-bit ultra high speed TTL-Level Static Random Access Memory organized as 8,192

Contextual Info: KM75C104A 0% S S SAMSUNG CMOS FIFO WITH PROGRAMMABLE FLAG % 0 S em icon du ctor Preliminary DESCRIPTION FEATURES The 75C104A is a 4K x 9 dual port memory that imple­ ments a special First-In-First-Out FIFO algorithm that loads and empties data on a first-in-first-out basis. Sev­

k552

Abstract: K552 motorola aaeo LA 7873 68EC030 architecture of 80486 microprocessor M9M material KS84C31 KS84C32 MC68040
Contextual Info: KS84EC30 SAMSUNG DYNAMIC RAM CONTROLLER Semiconductor M archi 991 PRODUCT OVERVIEW FEATURES The Samsung KS84EC30 is a high performance DRAM controller designed for high speed DRAM arrays up to 4Mbytes in size. It simplifies the interface between the microprocessor and DRAM array, while also significantly

STR w 6053 n

Abstract: STR w 6053 S STR 6053 n STR 6053 PC-620 protech str w 6053 S277-7 STR 6053 S
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North East North Central Northwest 20 M all Road S u ite 410 B u rlin g to n, M A 01803 617 2 7 3 -4 8 88 FAX: (617) 2 7 3 -9 3 63 901 W a rre n v ille R oad S u ite 120 Lisie, IL 6053 2 -13 5 9 (708) 852-2011 FAX: (708) 852-3096

B5218

Abstract: uc 1201a 14001-1
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. N orth C entral N o rth w e st N orth E a s t 20 M all R oad S u ite 410 B u rlin g to n, M A 01803 617 2 7 3 -4 8 88 F A X (6 1 7 )2 7 3 -9 3 6 3 901 W a rre n v ille R oad S uite 120 Lisle, IL 6 0 5 3 2 -13 5 9

68030

Abstract: Motorola 68030 I486 KS84C31 KS84C32 MC68030 MC68040 tr4l Samsung KS84C32 68030 80486 microprocessor circuit diagram
Contextual Info: DYNAMIC RAM CONTROLLERS KS84C31/32 PRODUCT OVERVIEW FEATURES The Samsung KS84C31 and KS84C32 are high perform­ ance dynamic RAM DRAM controllers. They simplify the interface between the microprocessor and the ORAM array, while also significantly reducing the required de­

dbx 1252

Contextual Info: 852-2012:QuarkCatalogTempNew 9/5/12 8:08 AM Page 852 POWER INLETS, FILTERS, STRIPS & UPSS ENCLOSURES INTERCONNECT TEST & MEASUREMENT 8 Inlet Filters and Inlet Connectors Corcom DC and DA Series — DC Filters The DC Series filters were designed as general-purpose line

100BASE-FX

Abstract: 100BaseF
Contextual Info: 852-104 4 7-Port 100BASE-TX + 2-Slot 100BASE-FX Industrial Managed Switch 379 ON 4 LA SE R R PW R 2 3 PS AL M PO ST 1 5 14 13 12 8 9 10 LN Reset 6 CT INE K/A FF L O TX RX 100 11 852-104 8 TX 9 1 Primary Power LED 2 Redundant Power LED 3 Alarm LED 4 POST LED

KM41C1000

Abstract: KMM591000
Contextual Info: SAMSUNG K M M 4 9 1 0 0 0 /K M M 5 9 1 0 0 0 □ - • - 1M x 9 DRAM SIP and SIMM Memory Modules GENERAL DESCRIPTION FEATURES The Samsung KMM491000 and KMM591000 are 1M x 9 dynamic RAM high density memory mod­ ules. The ninth bit is generally used for parity and