839 TRANSISTOR Search Results

839 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description	Download
BLA1011-300	Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
93L422ADM/B	Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
54F151/BEA	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA)	PDF
54F573FM/B	Rochester Electronics LLC	54F573 - Bus Driver, F/FAST Series, 1-Func, 8-Bit, True Output, TTL,	PDF

839 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
AN-839 Abstract: DS3883A DS3884A DS3885 DS3886A Contextual Info: National Semiconductor Application Note 839 Joel Martinez, Stephen Kempainen July 1992 INTRODUCTION Futurebus+ systems designed today have bus widths of 32 or 64. To support higher bandwidths in the future, Futurebus+ provides a data width extension of up to 256 bits. BTL	Original	64-bit ds3884a ds3885 an011487 +3an-839 ds3883a ds3886a	PDF
case transistor 79A Abstract: tel 839 b AN-839 C1996 DS3883A DS3884A DS3885 DS3886A Contextual Info: National Semiconductor Application Note 839 Joel Martinez Stephen Kempainen July 1992 INTRODUCTION Futurebus a systems designed today have bus widths of 32 or 64 To support higher bandwidths in the future Futurebus a provides a data width extension of up to 256 bits BTL	Original	64-bit ds3884a ds3885 case transistor 79a +5tel 839 b an-839 c1996 ds3883a ds3886a	PDF
Contextual Info: BD840 BD842 BD844 SILICON PLANAR EPITAXIAL POWER TRANSISTORS P N-P silicon transistors, in a plastic T 0 -2 0 2 package, recom m ended fo r use in television circuits and audio applications. N-P-N com plem ents are BD 839, BD841 and BD843. QUICK REFERENCE DATA	OCR Scan	bd840 bd842 bd844 bd841 +1bd843	PDF
AN-839 Abstract: DS3883A DS3884A DS3885 DS3886A Contextual Info: National Semiconductor Application Note 839 Joel Martinez, Stephen Kempainen July 1992 INTRODUCTION Futurebus+ systems designed today have bus widths of 32 or 64. To support higher bandwidths in the future, Futurebus+ provides a data width extension of up to 256 bits. BTL	Original	64-bit ds3884a ds3885 an011487 +3an-839 ds3883a ds3886a	PDF
AN-839 Abstract: DS3883A DS3884A DS3885 DS3886A Contextual Info: National Semiconductor Application Note 839 Joel Martinez, Stephen Kempainen July 1992 INTRODUCTION Futurebus+ systems designed today have bus widths of 32 or 64. To support higher bandwidths in the future, Futurebus+ provides a data width extension of up to 256 bits. BTL	Original	64-bit ds3884a ds3885 an-839 +2ds3883a ds3886a	PDF
2SA939 Abstract: 2SA939 B 2SA839 HI-FI AMP 200X2mm 2SA839-0 sfik Contextual Info: 2 s a 839 " ^ v i i y p N ^ P = m m * y & ^ y y z 5> SILICON PNP TR IP LE DIFFUSED MESA TRANSISTOR o ismmntimmm o mmmnttmmm o Audio Power Amplifier Applications o Driver Stage Amplifier Applications • S if f l E T -i - : • asm* v CE0 = - 150 V Hi-Fi 2 S C 1 6 69 k	OCR Scan	2sa839 -150v 8sc1669 220ab +88-10a1a 2sa939 2sa839-y 200x2mm 2sa939 b hi-fi amp 2sa839-0 sfik	PDF
d844 Abstract: Transistors BD 330 Contextual Info: ^[ _ PHILIPS INTERNATIONAL BD840 BD842 BD844 SbE D • 7110fl2b 00M303L. 34T « P H I N T-33-l T SILICON PLANAR EPITAXIAL POWER TRANSISTORS P-N-P silicon transistors, in a plastic T 0-2 0 2 envelope, recommended for use in television circuits and	OCR Scan	bd840 bd842 bd844 7110fl2b +500m303l bd841 bd843 d844 transistors bd 330	PDF
HT 1000-4 power amplifier Abstract: triac tag 8739 H48 zener diode TRIAC TAG 8812 Zener diode H48 h48 diode zener loctite 5145 RF MODULE CIRCUIT DIAGRAM z 10 cd harris transistor f6 13003 OM370 Contextual Info: TECHNICAL MANUAL SigmaPLUS IOT Transmitters I Introduction II Installation & Checkout III Operation IV Theory of Operation V Maintenance & Alignments VI Troubleshooting VII Parts List VIII Subsections T.M. No. 888-2430-001 Copyright HARRIS CORPORATION	Original	75watt ht 1000-4 power amplifier triac tag 8739 h48 zener diode +7triac tag 8812 zener diode h48 h48 diode zener loctite 5145 rf module circuit diagram z 10 cd harris transistor f6 13003 om370	PDF
Contextual Info: Silicon Photo Transistor OPB0462 1. Structure 1.1 Chip Size : 0.46mm X 0.46mm 1.2 Chip thickness : 180 15um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 135um - Base : 70um X 70um 2. Guaranteed Probed Electrical Characteristics	Original	opb0462 135um 500ua	PDF
OPB1104 Contextual Info: Silicon Photo Transistor OPB1104 1. Structure 1.1 Chip Size : 0.42mm X 1.17mm 1.2 Chip thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um - Base : 60um X 60um 1.6 Active Area : 0.31mm X 0.46mm	Original	opb1104 130um 500ua	PDF
OPB0462 Contextual Info: Silicon Photo Transistor OPB0462 1. Structure 1.1 Chip Size : 0.46mm X 0.46mm 1.2 Chip thickness : 180±15um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 135um - Base : 70um X 70um Ta=25℃	Original	opb0462 135um 500ua	PDF
OPB0422 Abstract: 839 transistor transistor 835 Contextual Info: Silicon Photo Transistor OPB0422 1. Structure 1.1 Chip Size : 0.415mm X 0.415mm 1.2 Chip thickness : 180±15um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 138um X 138um - Base : 70um X 70um Ta=25℃	Original	opb0422 415mm 138um 500ua +2839 transistor transistor 835	PDF
Contextual Info: Silicon Photo Transistor OPB0422 1. Structure 1.1 Chip Size : 0.415mm X 0.415mm 1.2 Chip thickness : 180 15um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 138um X 138um - Base : 70um X 70um 2. Guaranteed Probed Electrical Characteristics	Original	opb0422 415mm 138um 500ua	PDF
835 CB Abstract: OPB0808 transistor 835 Contextual Info: Silicon Photo Transistor OPB0808 1. Structure 1.1 Chip Size : 0.80mm X 0.80mm 1.2 Chip thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 140um - Base : 100um X 100um 1.6 Active Area : 0.64mm X 0.64mm	Original	opb0808 140um 100um 500ua +2835 cb transistor 835	PDF

Contextual Info: Silicon Photo Transistor OPB1104 1. Structure 1.1 Chip Size : 0.42mm X 1.17mm 1.2 Chip thickness : 280 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um - Base : 60um X 60um 1.6 Active Area : 0.31mm X 0.46mm	Original	opb1104 130um 500ua	PDF
Contextual Info: Silicon Photo Transistor OPB0606 1. Structure 1.1 Chip Size : 0.61mm X 0.61mm 1.2 Chip thickness : 280 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 155um X 155um - Base : 90um X 90um 2. Guaranteed Probed Electrical Characteristics	Original	opb0606 155um 500ua rl-1000	PDF
OPB0505P Contextual Info: Silicon Photo Transistor OPB0505P 1. Structure 1.1 Chip Size : 0.50mm X 0.50mm 1.2 Chip thickness : 180±20um 1.3 Metallization : Top - Al, Bottom - Cr-Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 120 X 120um - Base : 60um X 60um 2. Electrical Characteristics	Original	opb0505p 120um 100ua	PDF
ic 8259 Abstract: OPB0642 opb064 Contextual Info: Silicon Photo Transistor OPB0642 1. Structure 1.1 Chip Size : 0.62mm X 0.42mm 1.2 Chip thickness : 220±30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 160um : Emitter Electrode : Base Electrode	Original	opb0642 160um 000lux 2856k +3100ua ic 8259 opb064	PDF
Contextual Info: Silicon Photo Transistor OPB0505P 1. Structure 1.1 Chip Size : 0.50mm X 0.50mm 1.2 Chip thickness : 180 20um 1.3 Metallization : Top - Al, Bottom - Cr-Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 120 X 120um - Base : 60um X 60um 2. Electrical Characteristics	Original	opb0505p 120um 100ua	PDF
Contextual Info: Silicon Photo Transistor OPB0642 1. Structure 1.1 Chip Size : 0.62mm X 0.42mm 1.2 Chip thickness : 220 30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 160um : Emitter Electrode : Base Electrode	Original	opb0642 160um 000lux 2856k +1100ua	PDF
Contextual Info: Silicon Photo Transistor OPB0808 1. Structure 1.1 Chip Size : 0.80mm X 0.80mm 1.2 Chip thickness : 280 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 140um - Base : 100um X 100um 1.6 Active Area : 0.64mm X 0.64mm	Original	opb0808 140um 100um 500ua	PDF
839 transistor Contextual Info: Silicon Photo Transistor OPB1204 1. Structure 1.1 Chip Size : 1.2mm X 0.45mm 1.2 Chip thickness : 230±20um 1.3 Metallization : Top - Al 2um , Bottom - Au 1.4 Back Metal : Au(1,000Å) 1.5 Passivation : Silicon Nitride 1.6 Bonding Pad Size : Emitter Electrode	Original	opb1204 130um 000lux 2856k +3500ua rl-1000 839 transistor	PDF
OPB0604 Abstract: 839 transistor Contextual Info: Silicon Photo Transistor OPB0604 1. Structure 1.1 Chip Size : 0.60mm X 0.45mm 1.2 Chip thickness : 220±30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um : Emitter Electrode : Base Electrode	Original	opb0604 130um 000lux 2856k +3500ua rl-1000 839 transistor	PDF
2SC326 Contextual Info: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC3264 Features • NPN Silicon Transistors With MT-200 package Maximum Ratings Symbol Rating Rating Unit VCEO Collector-Emitter Voltage	Original	2sc3264 mt-200 12vdc 25madc +12sc326	PDF

839 TRANSISTOR Search Results

839 TRANSISTOR Result Highlights (5)

839 TRANSISTOR Datasheets Context Search

AN-839

case transistor 79A

AN-839

AN-839

2SA939

d844

HT 1000-4 power amplifier

OPB1104

OPB0462

OPB0422

835 CB

OPB0505P

ic 8259

839 transistor

OPB0604

2SC326