81A7 Search Results

Contextual Info: EDD NOTES: UNLESS OTHERWISE SPECIFIED, TOLERANCES ARE ± 81A7043TCT .0 1 0 ” [,2 5 4 m m ]. .37 5 [9 .5 3 m m ] 2X .0 6 0 , MATERIALS: SUBSTRATE: ALUMINUM NITRIDE COVER: ALUMINA TAB: BERYLLIUM COPPER RESISTIVE FILM: THIN FILM FINISH: RoHS COMPLIANT GROUND PLANE: SILVER PLATED

BC519

Abstract: 81a diode
Contextual Info: IPB070N06N G IPP070N06N G IPI070N06N G "%&$!"# Power-Transistor Product Summary Features V 9H P & ? F 71C 5 3 81A75 6? A61BCBF9C 3 89 >7 1@@<9 3 1C 9? >B R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C >? A=1<<5E5<  E5AB9 ?> I9 .( J .&/ Y" 0( 6 P   S ? @5A1C

65A3

Abstract: 5E DIODE marking c-9
Contextual Info: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H P 6? ABH>3 A53 C96931C9? > 4A9E5B1>4 43 43 ,& , R  , ? >=1G, & P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  I9   P ' 3 81>>5< >? A=1<<5E5<

65a3

Abstract: be5a IPB025N10N3G V9910 95E-9
Contextual Info: IPB025N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc *&- Y" I9 )0( 6 P GCA5=5<H <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH

IPB025N10N3

Abstract: IPB025 b1c diode marking a5 4r diode marking a5 4r diode b1c
Contextual Info: IPB025N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc *&- Y" I9 )0( 6 P GCA5=5<H <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH

b12 7d diode

Contextual Info: IPB034N06N3 G Id\Q "%&$!"# 3 Power-Transistor Product Summary Features P 6? ABH>3 A53 C96931C9? > =? C? A 4A9E5B1>4 43 43 , & , P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H .( J R 9H"[Z#$YMc +&, Y" I9 )( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z#

Contextual Info: EDD NOTES: UNLESS OTHERWISE SPECIFIED, TOLERANCES ARE ± .250 [6.3 5 m m ] DRAWING NO.: 2X .060 [ 1 ,52mm] PROTECTIVE COATING /OJC A 0 7 — F12 58 05 3 0 /0 8 REV. DESCRIPTION DRAWN APVD. 81A7028-* .0 1 0 ” [.2 5 4 m m ]. .040 [1 .02m m ] .375 [9 .53m m ]

5411C

Abstract: da5 diode BC519 58a4
Contextual Info: IPB080N06N G IPP080N06N G "%&$!"# Power-Transistor Product Summary Features V 9H P & ? F 71C 5 3 81A75 6? A61BCBF9C 3 89 >7 1@@<9 3 1C 9? >B R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C >? A=1<<5E5<  E5AB9 ?> I9 .( J /&/ Y" 0( 6 P   S ? @5A1C 9>7 C

RIDA

Contextual Info: EDD NOTES: U N LESS OTHERWISE SPECIFIED, TOLERANCES ARE ± .250 [6 .3 5 m m ] DRAWING NO.: 2X .060 [ 1 ,52m m ] PROTECTIVE COATING 81A7028*F .010” [,254m m ]. .040 [1 .0 2 m m ] REV. .375 [9 .5 3 m m ] A 2X .050 [1 .2 7 m m ] I2X .022 [0 .5 7 m m ] .375

Contextual Info: EDD NOTES: UNLESS OTHERWISE SPECIFIED, TOLERANCES ARE ± * = RESISTANCE RANGE AVAILABLE. DRAWING NO.: .250 [6 .3 5 m m ] .37 5 [9 .5 3 m m ] 2X .0 6 0 , [ 1 .52m m J E 81A7043TC-* .0 1 0 ” [,2 5 4 m m ]. .0 9 0 MAX ”[2 .1 6 m m ] 2X .00 5 [0 .1 3 m m ]

IPA105N15N3

Abstract: IPA105N15N 81a diode
Contextual Info: IPA105N15N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H -( J R  , ? >=1G )(&- Y" +/ I9 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P   S ? @5A1C9>7 C5=@5A1CDA5

Contextual Info: RESISTOR CHIP 50 WATT DATA SHEET PART SERIES: 81A7028XXF FEATURES SHEET 1 OF 2 Dwg 81A7028F EN 13-3509 Revision- APPLICATIONS Wide Band Operation High Power Direct Attached Low Capacitance Easy Installation Wide Resistance Range Broadcast High Power Filters

h945

Contextual Info: Id\Q  $  "&'%!"# $!  " : A 0<% <,9=4=>: <  $  " <: /?.>$ ?8 8 ,<C >HJRHNL ) 9H P @C9=9I54 C53 8>? <? 7H 6? A    3 ? >E5AC5AB ' 9H"[Z#$YMc P  G3 5<<5>C71C5 3 81A75 G' 9H"[Z# @A? 4D3 C ( &  $9 0( J )*&+ Y" ,( 6 P, D@5A9? AC85A=1<A5B9 BC1>3 5

Contextual Info: Id\Q  %   ! ! %   "%&$!"#D  # : A 0<& <,9=4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY P @C9=9I54 6? A43 43 3 ? >E5AB9? > P ' 3 81>>5< >? A=1<<5E5< 9H )-( J ' 9H"[Z#$YMc -* Y" $9 *) 6 P  G3 5<<5>C71C5 3 81A75 G' 9H"[Z# @A? 4D3 C ( &  E=%I9HDC%0 P. 5AH <? F ? > A5B9BC1>3 5 ' 9H"[Z#

Contextual Info: Id\Q #    !  !   a "%&$!"#  # : A 0<& <,9=4=>: < # <: /?.>% ?8 8 ,<C 6LHZ[XLY P  G3 5<<5>C71C5 3 81A75 G 9H"[Z# @A? 4D3 C ( &  P. 5AH <? F ? > A5B9BC1>3 5 ( 9H"[Z# * 9H .( J ( 9H"[Z#$YMc +&0 Y" %9 1( 6 P ' 3 81>>5< >? A=1<<5E5< @A5E9? DB5>79>55A9

953m

Abstract: 81a7042
Contextual Info: EDD DRAWING NOTES: UNLESS OTHERWISE SPECIFIED, TOLERANCES ARE ± .01 0 ” [.254m m ]. .040 [1 .02mm]" .250 [6.35m m ] NO .: REV. 81A7042-* A 2X .050 [1 .27mm] 2X .040 [1.02m m ] .255 [6.48m m ] .375 [9.53m m ] MATERIALS: SUBSTRATE: ALUMINUM NITRIDE FINISH:

Contextual Info: EDD NOTES: U N LESS OTHERWISE SPECIFIED, TOLERANCES ARE ± [2 .5 4 m m ] [ 1 .02m m ] DRAWING NO.: B .090 [2 .2 9 m m ] " f BZ5 9 .200 [5 .0 8 m m ] I 81A7031*F .010” [,254m m ]. i * .160 [4 .0 6 m m ] REV. 2X .023 [,5 8 m m ] 2X" .030 [,7 6 m m ] MATERIALS:

Contextual Info: EDD NOTES: UNLESS OTHERWISE SPECIFIED, TOLERANCES ARE ± .250 DRAWING NO.: 2X .060 [ 1 .52m m ] PROTECTIVE COATING 81A7028*F .0 1 0 ” [.2 5 4 m m ]. .040 [ 1 .02 m m ] 2X .050 [ 1 .27 m m ] 2X .023 ~ J [0 .5 7 m m ] .375 [9 .5 3 m m MATERIALS: SUBSTRATE: ALUMINUM NITRIDE

B1C DIODE

Abstract: IPB039N10N3 marking 1c marking a5 4r diode
Contextual Info: IPB039N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc +&1 Y" I9 ).( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH

8E89

Contextual Info: お使いになる前に 取扱説明書 基本操作 電話をかける／受ける 文字入力 電話帳 メール 音・表示・照明の設定 カレンダー セキュリティ 便利な機能 ウィルコムの各種サービス データフォルダ

TRANSISTOR J477

Abstract: TRANSISTOR J477 48 C5750Y5V1H226Z AFT18H35 32E17
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 1, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

Contextual Info: F* /0 (( -2'&-( &#,2&2+" ''0)5A95B BEE0-1CC0 D0)C17501CC5AH081A75A 51CDA5B K00+=9E5AB1;00!=?DC0F9C803C9E50&#39; K00 9780'5A6>A<1=350D0)C175081A75A K004E1=3540029C0$93A>?A>35BB>A0>=CA>;09A3D9C K00(5E5AB50&#39;>;1A9CH0'A>C53C9>=02H0DB5 K00!7=9C9>=0'A>C53C9>=

Contextual Info: 123456789ABCD9EFFBB989 BB9 12 1 F78"5 B7512 1 $ B7,56758E58 CA<75;E65