819 LINEAR TECHNOLOGY Search Results

Contextual Info: SMT POWER TRANSFORMER Matched to Linear Technology Chipset DC/DC converter for use with Linear Technology LTC 1535 isolated RS485 transceiver Compact and cost-effective industrial design: EP7 format 500Vrms isolation Electrical Specifications @ 25°C — Operating Temperature -40°C to +125°C

Q62702-P1654

Abstract: Q62702-P5503 94-2S bg94 SPL BG94 BG98
Contextual Info: Unmontierte Laserbarren, 50% Füllfaktor Un-mounted Laser Bars, 50% Fill-factor SPL BG81, SPL BG94, SPL BG98 Besondere Merkmale Features • Unmontierter Laserbarren • Hoch-effiziente MOVPE Quantenfilmstruktur • Zuverlässiges kompressiv verspanntes InGa Al As/GaAs Material

JIS-10K-50A

Abstract: JIS-30K-50A JIS-10K-40A JIS-10K-50A flange size JIS-20K-50A flange size JIS-20K-40A JIS-30K-40A JIS10K G5121 JPI-300LB-1
Contextual Info: SMALL FLANGE LEVEL TRANSMITTER FKY.4 DATA SHEET The FCX–A2 small flange level transmitter accurately measures liquid level and transmits a proportional 4 to 20mA signal. The transmitter utilizes a unique micromachined capacitance silicon sensor with state-of-the-art microprocessor technology to provide exceptional performance and functionality.

JIS-10K-100A

Abstract: JIS-10K-80A JIS10K-80A JIS-20K-80A level sensor transmitter JIS-30K-80A flange jpi 150 DN100 PN16 zero elevation and zero suppression G5121
Contextual Info: LEVEL TRANSMITTER FKE.4 DATA SHEET The FCX–A2 level transmitter accurately measures liquid level and transmits a proportional 4 to 20mA signal. The transmitter utilizes a unique micromachined capacitance silicon sensor with state-of-the-art microprocessor technology to

JIS-10K-50A

Abstract: JIS-10K-40A JIS-10K-50A flange size JIS-30K-50A JIS-20K-50A flange size JIS-20K-40A JIS-30K-40A material SCS14A JIS-20K-50A JIS-10
Contextual Info: SMALL FLANGE LEVEL TRANSMITTER FKY.4 DATA SHEET The FCX–A2 small flange level transmitter accurately measures liquid level and transmits a proportional 4 to 20mA signal. The transmitter utilizes a unique micromachined capacitance silicon sensor with state-of-the-art microprocessor technology to provide exceptional performance and functionality.

LT1990

Abstract: DC819 LT1995 LT1991 FOOTPRINTS con JP-26
Contextual Info: DEMO CIRCUIT 819 LT1990,QUICK LT1991,START AND GUIDE LT1995 LT1990, LT1991, and LT1995 Configurable-Gain Amplifiers DESCRIPTION Demonstration circuit 819 is a jumper definable evaluation platform featuring the LT1990, LT1991, and LT1995 Configurable-Gain Amplifiers.

PIC16F818

Abstract: PIC16F819 interrupt-on-change
Contextual Info: PIC16F818/819 PIC16F818/819 Rev. B0 Silicon Errata Sheet The PIC16F818/819 Rev. B0 parts you have received conform functionally to the Device Data Sheet DS39598E , except for the anomalies described below. All of the issues listed here will be addressed in future

PWM Inverter using PIC Microcontroller

Abstract: PIC18F818 PIC16F818 dspic33 example codes i2c pic16f818-i pic16f819 tutorial
Contextual Info: PIC16F818/819 18/20-Pin Enhanced Flash Microcontrollers with nanoWatt Technology Low-Power Features: Pin Diagram • Power-Managed modes: - Primary Run: XT, RC oscillator, 87 A, 1 MHz, 2V - INTRC: 7 A, 31.25 kHz, 2V - Sleep: 0.2 A, 2V • Timer1 oscillator: 1.8 A, 32 kHz, 2V

MCM63Z737

Abstract: MCM63Z737TQ10 MCM63Z819
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 128K x 36 and 256K x 18 Bit Flow–Through ZBT RAM Synchronous Fast Static RAM Order this document by MCM63Z737/D MCM63Z737 MCM63Z819 The ZBT RAM is a 4M–bit synchronous fast static RAM designed to provide Zero Bus Turnaround. The ZBT RAM allows 100% use of bus cycles during

capacitor date codes

Abstract: SSPcon pic16f818 spi PIC16F818 PIC16F819 PIC16F819* SLEEP INSTRUCTION
Contextual Info: PIC16F818/819 PIC16F818/819 Rev. A4 Silicon Errata Sheet The PIC16F818/819 Rev. A4 parts you have received conform functionally to the Device Data Sheet DS39598E , except for the anomalies described below. Microchip intends to address all issues listed here in

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 128K x 36 and 256K x 18 Bit Flow–Through ZBT RAM Synchronous Fast Static RAM Order this document by MCM63Z737/D MCM63Z737 MCM63Z819 The ZBT RAM is a 4M–bit synchronous fast static RAM designed to provide Zero Bus Turnaround. The ZBT RAM allows 100% use of bus cycles during

kxud9

Abstract: KXUD9-2050
Contextual Info: KXUD9 Series Accelerometers and Inclinometers FEATURES MARKETS APPLICATIONS Ultra-small Package - 3x3x0.9mm LGA Digital SPI/I2C Output User-programmable g-Range User-programmable Low Pass Filter Ultra-low Power Consumption Cell Phones and Handheld PDAs \\

KXP84

Abstract: KXP84-2050
Contextual Info: KXP84 Series Accelerometers and Inclinometers FEATURES MARKETS APPLICATIONS Small Package - 5x5x1.2mm DFN Hard Disk Drives/Laptops I2C/SPI Interface Free-fall Detection Free-fall Interrupt Output Cell Phones and Handheld PDAs High-g Motion Interrupt Output

Contextual Info: KXSD9 Series Accelerometers and Inclinometers FEATURES MARKETS APPLICATIONS Ultra-Small Package - 3x3x0.9mm LGA Digital SPI/I2C Output Cell Phones and Handheld PDAs \\ Gesture Recognition and User Interface Function User-programmable g-Range Game Controllers & Computer Peripherals

KXSD9-2050

Abstract: KXSD9-1026 Kionix KXSD9 SPI timing diagram inclinometer sensor with I2C interface KXSD9 shock sensor SPI inclination sensor SPI
Contextual Info: KXSD9 Series Accelerometers and Inclinometers FEATURES MARKETS APPLICATIONS Ultra-Small Package - 3x3x0.9mm LGA Digital SPI/I2C Output Cell Phones and Handheld PDAs \\ Gesture Recognition and User Interface Function User-programmable g-Range Game Controllers & Computer Peripherals

APT1201R6BVR

Abstract: BAT 545
Contextual Info: APT1201R6BVR 8A 1.600Ω 1200V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

APT10M25BVR

Abstract: 43RG
Contextual Info: APT10M25BVR 75A 0.025Ω 100V POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.

MCM63Z737

Abstract: MCM63Z737TQ10 MCM63Z819
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. 128K x 36 and 256K x 18 Bit Flow–Through ZBT RAM Synchronous Fast Static RAM Order this document by MCM63Z737/D MCM63Z737 MCM63Z819 The ZBT RAM is a 4M–bit synchronous fast static RAM designed to provide

APT20M45B

Abstract: APT20M45BVR Diode 224
Contextual Info: APT20M45BVR G 200V, 56A, 0.045Ω APT20M45BVR(G) POWER MOS V POWER MOS V® is a new generation of high voltage N-Channel enhancement TO mode power MOSFETs. This new technology minimizes the JFET effect, increase packing density and reduces the on-resistance. Power MOS V® also achieves

TO-22F

Abstract: 824 mosfet
Contextual Info: IRLS610A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BVdss = 200 V Logic Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA Max. @ VDS= 200V

APT20M38BVFR

Contextual Info: APT20M38BVFR 67A 0.038Ω 200V POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

R7525

Abstract: APT10M19BVFR
Contextual Info: APT10M19BVFR 75A 0.019Ω 100V POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

APT1001RBVFR

Contextual Info: APT1001RBVFR 11A 1.000Ω 1000V POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

APT10M25BVFR

Contextual Info: APT10M25BVFR 75A 0.025Ω 100V POWER MOS V FREDFET Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™