8128 STATIC RAM Search Results

HM62V8128FP-12

Abstract: HM62V8128FP-15 HM62V8128LFP-12 HM62V8128LP-12 HM62V8128LP-15 HM62V8128P-12 HM62V8128P-15 TTC-02 Hitachi Scans-001
Contextual Info: HM62V8128 Series Product Preview 131072-Word x 8-Bit High Speed CMOS Static RAM Description Ordering Information The H itachi H M 62V 8128 is a CM O S static RAM organized 128 kword X 8 bit. It realizes h ig h er d e n sity , h ig h er p erform an ce and lo w

Contextual Info: HM62V8128 Series 131072-Word X Product Preview 8-Bit High Speed CMOS Static RAM D escription O rd e rin g In fo rm atio n The H itachi H M 62V 8128 is a CM OS static RAM organized 128 kw ord X 8 bit. It realizes h ig h e r d en sity , h ig h e r p erfo rm a n ce and low

Contextual Info: ELECTRONIC DESIGNS INC ^2 ED I Etoefronlc O^itgns Inc. — . —— — 3QE D • 3 a 3 ü i m QQ00bfci3 4 ■ ED 18M 8128 C /LP/P i, - . mm —■ ■ . , ■■. ■■ ■ . High Performance Megabit S R A M Module 128Kx8 Static R A M C M O S , Module Features

Contextual Info: HM62W8128 Series Product Preview 131072-Word x 8-Bit High Speed CM OS Static RAM Description O rd erin g In fo rm atio n Type No. A ccess time HM62W8128LP-10 100 ns HM62W8128LP-12 120 ns HM62W8128LP-10L 100 ns HM62W8128LP-12L 120 ns HM62W8128LP-10SL 100 ns

76C8128

Abstract: gm76c8128 76C8128/L/LL
Contextual Info: GM76C8128/L/LL GoldStar 131,072 WORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON CO., LTD. Pin Configuration Description The GM 76C8128/L/LL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a 0.8um advanced CMOS technology, it provides high speed operation with

ic CD40106

Abstract: cd40106 application notes ten segment display 74HC 74HCT IC family spec 74HC14 oscillator application diagram 74C14 CD40106 PIN OUT TIMEX PT 74hc logic family spec AN-376
Contextual Info: National Semiconductor Application Note 376 Larry Wakeman October 1984 By adopting certain techniques in the design of your CMOS-based logic system you can effect dramatic reductions in the transitional power these zero-quiescent-current devices consume when switching

Contextual Info: 128K X 8 SRAM mosaic M S M 8128 - 70/85/ 10/12 semiconductor, inc. 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Description The MSM8128 is a 1Mbit monolithic SRAM organised as 128K x 8. It is currently available in

GR281

Abstract: 2716 eprom 4016 RAM 2716 eprom datasheet memory 2716 eprom 2716 pd446 static ram 4802 2716 2k eprom retention memory ram 6116
Contextual Info: GR281 2K x 8 NON-VOLATILE RAM GR281 (2K x 8) NON-VOLATILE RAM Symbol Vdd Vi/o Temp DESCRIPTION The GR281 is a 2048 word by 8 bits (2K x 8) nonvolatile CMOS Static Ram, fabricated from advanced silicon gate CMOS technology and a high reliability lithium power cell.

Contextual Info: m PRELIMINARY GM76FV8128,GM76FU8128,GM76FS8128,GM76FR8128 LG Semicon Co.,Ltd. 131,072 w o r d s x 8 b i t CMOS STATIC RAM Description Pin Configuration The GM76FV8128 / GM76FU8128 / GM76FS8128 / GM76FS8128 is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a

Contextual Info: RPR 2K x 8 NON-VOLATILE RAM MsmumnsusA • • • • • • • • • GR281 Has instant power circuit, does not require voltage slew Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM

Contextual Info: apR FAST ACCESS - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout

NVR2

Abstract: pd446
Contextual Info: GREENWICH 2K x 8 NON-VOLATILE RAM INSTRUMENTS LTD • • • • • • NVR2 Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Program RAM No limit to number of programming cycles Fits standard 24-pin socket

ram 8416

Contextual Info: FAST A C C E S S - 2K x 8 NON-VOLATILE RAM • • • • • • • GR281-4 Plug-in replacement for Static RAM 10 years data retention No erasure required Fast power down Functions as Data or Program RAM No limit to number of programing cycles Standard 24-pin JEDEC pinout

gr281

Abstract: GR281, 2K x 8
Contextual Info: 2 K x 8 GR 281 NON VOLATILE RAM WSTRUMENTS ITO * Plug-in replacement for Static R A M * 10 years data retention * No erasure required * Fast power down * Functions as Data or Program R A M * No lim it to number of programming cycles * Standard 24-pin JEDEC pinout

Contextual Info: HM62W8128 Seríes Product Preview 131072-Word x 8-Bit High Speed CMOS Static RAM Ordering Information Description Typ e No. A ccess tim e H M 62W 8128LP-10 100 ns H M 62W 8128LP-12 120 ns H M 62W 8128LP-1O L 100 ns H M 6 2W 81 28 LP-12 L 120 ns H M 62W 8128LP-1O SL

MT43C8129

Abstract: MT43C MT43C8128
Contextual Info: M ICRO N 128K TRIPLE PORT DRAM M T43C8128/9 X 8 TP D R A M 128K x 8 DRAM WITH DUAL 256 x 8 SAMS FEATURES • • PIN ASSIGNMENT Top View 52-PIN PLCC (P-1) iess Q f f o S S S o S a S a 2iiS n n n n n n n n n n n n r " ) S D Q ia SDQ2a SDQ3a SD04a TR/OE DQ1

HM62W8128-12

Contextual Info: HM62W8128 Series Product Preview 131072-Word x 8-B it High Speed CMOS Static RAM O rdering Inform ation D escription Type No. Access time HM62W8128LP-10 100 ns HM62W8128LP-12 120 ns HM62W8128LP-10L 100 ns HM62W8128LP-12L 120 ns HM62W8128LP-10SL 100 ns HM62W8128LP-12SL

es 7240

Abstract: SOJ40-P-400 A15C TC55BS8128J-10 TC55BS8128J-12
Contextual Info: TOSHIBA TC55BS8128J-10/12 P R E L IM IN A R Y 131,072 WORD x 8 BIT SYNCHRONOUS STATIC RAM w ith Input Registers, O utput Registers and P ass-Through Feature D e s c rip tio n T h e T C 5 5 B S 8 1 2 8 J is a 1 ,0 4 8 ,5 7 6 bit s ynch rono us sta tic ra n d o m acce ss m e m o ry fab ricate d using B iC M O S te ch n o lo g y and

MT43C8129A

Abstract: MT43C8129 MT43C
Contextual Info: PRELIMINARY M T43C8128A/9A 128K x 8 T R IP LE -P O R T DRAM M IC R O N 128K x 8 DRAM WITH DUAL 256 x 8 SAMS FEATURES • • • • • • • • • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data access ports Fast access times: 70ns random, 22ns serial

Contextual Info: mosaic 128K X 8 SRAM MSM8128X - 020/25/35 semiconductor, inc. 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Issue 4.3 : November 1998 131,072 x 8 CMOS High Speed Static RAM Description Features The MSM8128X is a 1Mbit monolithic SRAM

125OC

Abstract: CI 4026 power-55mW msm8128sxlmb
Contextual Info: 128K x 8 SRAM MSM8128X - 020/25/35 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Issue 4.3 : November 1998 131,072 x 8 CMOS High Speed Static RAM Description The MSM8128X is a 1Mbit monolithic SRAM

CI 4026

Abstract: MSM8128SXLMB 125OC
Contextual Info: 128K x 8 SRAM MSM8128X - 020/25/35 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Issue 4.3 : November 1998 131,072 x 8 CMOS High Speed Static RAM Description The MSM8128X is a 1Mbit monolithic SRAM

Contextual Info: MEMORIES SST/^-SS*!WW9!»a«i;!!WWS«»i ★ C apacity C onfiguration M odel No. 32k x 8 Under development A cce ss tim e n s 60 70 80 100 120 150 5 832 -i LH P -j LH P -j LH P -j LH P -j LH P H LH P 5 860 64k x 8 5 864 512k 3 2 k x 16 5 8128 128k x 8 1M

658128

Abstract: KM658128A
Contextual Info: Pseudo SRAM KM658128A/AL/AL- L 128K X 8 Bit CMOS Pseudo Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: — CE Access Time . 80,100,120ns Max. — Cycle Time . Random Read/Write Cycle Time . 130,160,190ns (Max.) • Low Power Dissipation . 200mW typ. (Active)