8013H Search Results

D844 transistor

Abstract: D988 9031h d918 TRANSISTOR J 5804 D852 transistor D880 pin out 9426h transistor D886 d998 transistor
Contextual Info: OMAP5910 Dual-Core Processor Data Manual Literature Number: SPRS197C August 2002 − Revised November 2003 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

K d998 transistor

Abstract: lz 02 1068 D844 voltage regulator
Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

KFG2G16Q2A

Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
Contextual Info: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

63FBGA

Abstract: KFG1G16Q2B onenand
Contextual Info: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

Contextual Info: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended

Samsung oneNand Mux

Abstract: samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 48FBGA 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15th, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

Contextual Info: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) FLASH MEMORY KFXXX16Q2A 1Gb MuxOneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

10072h

Abstract: structure chart of samsung company
Contextual Info: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND512 Part No. KFM1216Q2M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

IN329

Contextual Info: 19-3384; Rev 1; 9/04 KIT ATION EVALU LE B A IL A AV EEPROM-Programmable Hex/Quad Power-Supply Sequencers/Supervisors with ADC The MAX6870/MAX6871 EEPROM-configurable, multivoltage supply sequencers/supervisors monitor several voltage detector inputs, two auxiliary inputs, and four

Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

SLC NAND endurance 100k

Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0

samsung 2GB Nand flash 121 pins

Abstract: samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash
Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1

022AH

Contextual Info: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

4GB MLC NAND

Abstract: SAMSUNG NAND Flash MLC
Contextual Info: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) Preliminary FLASH MEMORY KFM2G16Q2M KFN4G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

Micron 4Mb NOR FLASH

Contextual Info: M25PE40 Serial Flash Memory Features M25PE40 4Mb 3V NOR Serial Flash Memory Serial Flash Memory with Byte Alterability, 75 MHz SPI bus, Standard Pinout Features • • • • • • • • • • • • • • 4Mb of page-erasable Flash memory 2.7V to 3.6V single supply voltage

D882 TRANSISTOR circuit example

Abstract: Layer3 VIDEO STN 4828
Contextual Info: OMAP5910 Dual-Core Processor Data Manual Literature Number: SPRS197D August 2002 - Revised August 2004 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

Contextual Info: OMAP5910 Dual-Core Processor Data Manual Literature Number: SPRS197D August 2002 - Revised August 2004 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

SO8w

Contextual Info: M25PE40 4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout Features • SPI bus compatible serial interface ■ 4 Mbit Page-Erasable Flash memory ■ Page size: 256 bytes – Page Write in 11 ms typical

w16 72

Abstract: DES Encryption TMS320
Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

MAX6875ETJ

Abstract: MAX6874 MAX6874ETJ MAX6875 801dh MR811
Contextual Info: 19-3438; Rev 0; 10/04 KIT ATION EVALU LE B A IL A AV EEPROM-Programmable, Hex/Quad, Power-Supply Sequencers/Supervisors Features The MAX6874/MAX6875 EEPROM-configurable, multivoltage supply sequencers/supervisors monitor several voltage detector inputs and general-purpose logic

OneNAND

Abstract: 63FBGA KFG1G16Q2M-DEB6 KFH2G16Q2M-DEB6 KFW4G16Q2M-DEB6 NAND Flash MLC
Contextual Info: OneNAND4G KFW4G16Q2M-DEB6 OneNAND2G(KFH2G16Q2M-DEB6) OneNAND1G(KFG1G16Q2M-DEB6) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFH2G16Q2M-DEB6 1.8V(1.7V~1.95V)

d998 TRANSISTOR

Abstract: D844 transistor transistor D998 TI925T D880 D880 TRANSISTOR TRANSISTOR J 5804 D986 d998 D880 pin out
Contextual Info: OMAP5910 Dual-Core Processor Data Manual Literature Number: SPRS197D August 2002 − Revised August 2004 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

D844 voltage regulator

Abstract: 9427h 9216h
Contextual Info: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include

Contextual Info: 19-3439; Rev 0; 10/04 KIT ATION EVALU LE B A IL A AV EEPROM-Programmable, Hex/Quad, Power-Supply Sequencers/Supervisors Features The MAX6872/MAX6873 EEPROM-configurable, multivoltage supply sequencers/supervisors monitor several voltage detector inputs and four general-purpose logic