800V Search Results

VK 1760 H

Abstract: SH80J SH80F1
Contextual Info: HIGH-SPEED THYRISTOR SILICON DIFFUSED TYPE SH80 D, F,G,J, L 13A HIGH S PE ED A P P L I C A T I O N S . Unit in mm FEATURES: . Repetitive Peak Off-State Voltage V d RM -200 ~ 800V Repetitive Peak Reverse Voltage Vr r m . Average On-State Current It(AV)=80A

TOSHIBA THYRISTOR

Contextual Info: THYRISTOR SH20 KD,F,GtJ,L 21A SILICON DIFFUSED TYPE HIGH SPEED APPLICATIONS. Unit FEATURES: . Repetitive Peak Off-State Voltage V d R M j = 200 800V Repetitive Peak Reverse Voltage vrrm . Average On-State Current It(AV)=200A . Turn-Off Time tq=15^s (Max.)

thyristor st 103

Abstract: SH30J13A L13A SH30J TOSHIBA THYRISTOR SH30F SH30F13A
Contextual Info: SH3 KD,F,G,H,J,L 13A HIGH-SPEED THYRISTOR SILICON DIFFUSED TYPE HIGH SPEED (FORKLIFT, ELECTRIC-CAR, CHOPPER, INVERTER) APPLICATIONS. Unit in m m FEATURES: . Repetitive Peak Off-State Repetitive Peak Reverse . Average On-State . Turn-Off . Gate =200 ^ 800v

NPN Transistor 1A 800V to - 92

Abstract: transistor -25 F07
Contextual Info: TS13003MV High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 800V IC 1.5A VCE SAT Features ● High Voltage ● High Speed Switching 0.8V @ IC / IB = 1A / 0.25A Block Diagram Structure ● Silicon Triple Diffused Type

tsc13003

Abstract: TSC13003H NPN Transistor 1A 800V to - 92 transistor 800V 1A TSC1300 NPN Transistor 1A 400V to - 92 TSC13 1.5A NPN power transistor TO-92
Contextual Info: TSC13003H Preliminary High Voltage NPN Transistor TO-92 TO-126 Pin Definition: 1. Emitter 2. Collector 3. Base Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 800V IC 1.5A VCE SAT Features 0.8V @ IC / IB = 0.5A / 0.1A Block Diagram

APQ03SN80AB

Abstract: MOSFET 800V 3A 800VVGS
Contextual Info: DEVICE SPECIFICATION APQ03SN80AB 800V/3A N-Channel MOSFET 1 Description These N-Channel enhancement mode power field effect transistors are produced using planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

fqt1n80

Contextual Info: QFET FQT1N80TF_WS N-Channel MOSFET 800V, 0.2A, 20Ω Features Description • RDS on = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

datasheet of ic 555

Abstract: datasheet ic 555 IC 555 800Volts
Contextual Info: SC35VB80 REVERSE VOLTAGE - 800Volts FORWARD CURRENT - 35Amperes GLASS PASSIVATED 3 PHASE BRIDGE RECTIFIERS FEATURES SCVB ●Surge overload -350 amperes peak ●Low forward voltage drop 1.417 MAX 36.0 1.412 MAX (29.0) .217(5.5) .177(4.5) ●Mounting position :Any

Contextual Info: R8005ANX Nch 800V 5A Power MOSFET Datasheet lOutline VDSS 800V RDS on (Max.) 2.08W ID 5A PD 40W TO-220FM (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.

APT0406

Abstract: APT0502
Contextual Info: APTC80SK15T1G Buck chopper Super Junction MOSFET Power Module 5 11 6 Application • AC and DC motor control • Switched Mode Power Supplies Q1 Features • 7 8 NTC 3 4 VDSS = 800V RDSon = 150mΩ max @ Tj = 25°C ID = 28A @ Tc = 25°C CR2 1 2 • • •

d2508

Abstract: D2504 transistor d2504 D2503 PC2503 PC2504 PC2508 PD2503 PD2504 PD2508
Contextual Info: DIODE MODULE 250A/300 to 800V PC2503,PC2504,PC2508 PD2503,PD2504,PD2508 OUTLINE DRAWING FEATURES * Isolated Base * Dual Diodes Cathode Common and Cascaded Circuit * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS PC PD * Rectified For General Use

APT8014L2FLL

Abstract: MAX7238
Contextual Info: APT8014L2FLL 800V 52A 0.140Ω POWER MOS 7 R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

8114

Abstract: APT12M80B APT12M80S MIC4452
Contextual Info: APT12M80B APT12M80S 800V, 13A, 0.80Ω Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

APT17F80B

Abstract: APT17F80S MIC4452
Contextual Info: APT17F80B APT17F80S 800V, 18A, 0.58Ω Max, trr ≤250ns N-Channel FREDFET TO -2 POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced

APT22F80B

Abstract: APT22F80S MIC4452 two switch forward converter
Contextual Info: APT22F80B APT22F80S 800V, 23A, 0.43Ω Max, trr ≤260ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT8015JVFR

Abstract: APT8015
Contextual Info: APT8015JVFR 44A 0.150Ω Ω 800V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

GENERAL SEMICONDUCTOR MARKING RJ

Abstract: marking code RB
Contextual Info: RS2A thru RS2K Vishay Semiconductors formerly General Semiconductor Surface Mount Fast Switching Rectifier Reverse Voltage 50 to 800V Forward Current 1.5A DO-214AA SMB Cathode Band 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) Mounting Pad Layout 0.185 MAX.

APT8043BLL

Abstract: APT8043SLL
Contextual Info: APT8043BLL APT8043SLL 800V POWER MOS 7 R MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

7106

Abstract: data sheet IC 7106 IL 7106 APT8014JFLL
Contextual Info: APT8014JFLL 800V 42A 0.140Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT8024JFLL

Contextual Info: APT8024JFLL 800V 29A 0.240Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT8075BVFR

Contextual Info: APT8075BVFR Ω 12A 0.750Ω 800V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT8052BFLL

Abstract: APT8052SFLL
Contextual Info: APT8052BFLL APT8052SFLL 800V 15A POWER MOS 7 R FREDFET 0.520Ω BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT8018L2VFR

Contextual Info: APT8018L2VFR 800V 43A POWER MOS V FREDFET 0.180Ω L2VFR TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

A37 diode

Contextual Info: ^»litron PRODUCT DEVICES.INC. Se^ SÌSSin"' “Esr -"°li£l'Ä?,ü,?KSI N-CHANNEL ENHANCEMENT MQS FET 800V , 1 . 6A , 7 . 8 0 ABSOLUTE MAXIMUM RATINGS PARAMETER UN IT S SYMBOL Drain- so ur ce Vo 1t . 1 Drain-Gate Voltage VDSS BOO Vdc (RGS=1.0Mo) (1)