7Z69420 Search Results

BSY95A

Contextual Info: b ^ E D • bbSB'IBl U Q 2 7 ^5 E a n N AMER PHILIPS/DISCRETE APX BSY95A A SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistors in a TO-18 metal envelope intended for general purpose low level switching applications. QUICK REFERENCE DATA Collector-base voltage open emitter

Contextual Info: LIE » N AUER PHILIPS/DISCRETE • bbS3^3i □□eaioi Tb7 l IAPX 2N2483 2N2484 SILICON PLANAR TRANSISTORS N-P-N transistors in TO-18 metal envelopes with the collector connected to the case. These transistors are primarily intended for use in high performance, low-level, low-noise amplifier

BCX23

Contextual Info: SbE D PHILIPS INTERNATIONAL • 711D62b 004507b 03=1 ■ P H I N _ T —2 7 - 2 P h ilip s S em ico n d u c to rs BCX23 Data sheet status Preliminary specification date of issue June 1990 Silicon planar epitaxial transistor QUICK REFERENCE DATA -VCEO C O N D ITIO N S

UC3425

Abstract: transistor k 2723 IC 541 BSX49 IEC134
Contextual Info: PHILIPS IN TE RNATIONAL Data sheet status Preliminary specification date of issue August 1990 SbE D m 711002b 0G42mfi übO MP H I N BSX49 t 2 7 -2 3 - Silicon planar epitaxial transistor QUICK REFERENCE DATA SYMBOL VcBO VCEO lc Ptot Tj hFE PARAMETER collector-base voltage

2N2222A 331

Abstract: 2n2222 h 331 transistors 2n2222 -331 2n2222 a 331 2n2222 331 transistors 2n2222 - 331 2n2222 h 331 2n2222+h+331+transistors 2n2222+a+331 2n2222a
Contextual Info: N AflER PHILIPS/DISCRETE b'lE D bb53c131 QDEAQfibi T5D I IAPX 2N2222 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a TO-18 metal envelope with the collector connected to the case. They are primar­ ily intended for high speed switching. The 2N2222 is also suitable fo r d.c. and v.h.f./u.h.f. amplifiers.

Contextual Info: N AMER PHILIPS/DISCRETE blE D • bfc.SB'lBl DDS7Mtm 733 « A P X BC107 to 109 A.F. SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes w ith the collector connected to the case. The BC107 is prim arily intended fo r use in driver stages o f audio amplifiers and in signal processing

BS25

Abstract: BCX22 IEC134 Silicon Epitaxial Planar Transistor philips
Contextual Info: PHILIPS INTER N A T I O N A L SbE m D 711002b 14^3 0042072 I PH IN Philips Sem iconductors BCX22 D a ta sheet status Preliminary specification d a te o f issue June 1990 Silicon planar epitaxial transistor Q U IC K R E F E R E N C E D A TA SYM BOL PARAM ETER

Contextual Info: N AMER PHILIPS/DISCRETE b^E D bb53^31 □□E7bED 53b BCY56 BCY57 IAPX A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes with the collector connected to the case. They are intended for general purpose very high-gain low level and low-noise applications. Moreover,

bsx20

Contextual Info: bb53T31 0Q134AS b • BSX19 BSX20 A ~ V - i 5 '- / 5" SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes, primarily intended for high-speed saturated switching and h.f. amplifier applications. QUICK REFERENCE DATA BSX19 BSX20 v CBO

Contextual Info: -j— ,1 - N AMER PHILIPS/DISCRETE 25E D • ^53131 . 0017265 b ■ BST97 A T -3 g -a £ T N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in TO-18 package and designed fo r use as line current interrupter in telephone sets and fo r application in relay, high speed and line transformer drivers.

BCX22

Abstract: Silicon Epitaxial Planar Transistor philips TCA 200 y
Contextual Info: L.TE J> N AMER PHILIPS/DISCRETE bfc.sa'm □QE7bGfl TBT • APX P h ilip s S e m ic o n d u c to rs D ata sheet status Preliminary specification d ate of issue June 1990 BCX22 Silicon planar epitaxial transistor QUICK REFERENCE DATA SYMBOL Tj hFE PARAMETER

Contextual Info: N AI1ER PHILIPS/DISCRETE bTE T> bb53^31 002612^ OMb I IAPX 2N2907 2N2907A l SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P medium power transistors in TO-18 metal envelopes designed primarily for high-speed switching and driver applications for industrial service.

Contextual Info: N AMER PHILIPS/DISCRETE bbSB'lBl DDEfilBS 4T0 • IAPX b'JE T> A ZN ZyU b 2N2906A SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P medium power transistors in TO-18 metal envelopes designed primarily for high-speed switching and driver applications for industrial service.

smd npn 2n2222

Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
Contextual Info: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.