7TTI414E Search Results

IRF150

Abstract: IRF150 MOSFET IRF150 To3 package IRF-150 IRF150 on semi
Contextual Info: 7964142 SAMSUNG SEMICONDUCTOR Tfl D e J 7Tti414E DD0SDÛ4 a f 98 D 0 5084 INC L' D T -SVIli N-CHANNEL POWER MOSFETS IRF150/151/152/153 FEATURES Low RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance

D1377

Abstract: TCA 965 BP KM424C256A
Contextual Info: b4E D SAMSUNG ELEC TRONICS INC • CMOS VIDEO RAM KM424C256A GENERAL DESCRIPTION 256K X 4 Bit CMOS VIDEO RAM FEATURES • Dual Port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance range: Item -6 RAM access time tmc RAM access time (tCAc)

Contextual Info: KM44V4000A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRA C tCAC tR C KM44V4000A/AL7ALL/ASL-6 60ns 15ns 110ns KM44V4000A/AUALL/ASL-7 70ns 20ns 130ns KM44V4000A/AL/ALL/ASL-8 80ns

Contextual Info: SAMSUNG ELECTRONICS INC fc^E D • 7 R b m 4 5 DDlBlll 7T2 « S M Ö K KM41C4001A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 1 A is a CMOS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess Memory.

Contextual Info: 7 9 6 4 1 4 2 SAM SUNG hfl S E M ICO N D U CTO R 9 8 D I N C _ DE I TTtiMlMS □□□SDflcl 1 050 8 9 d T -J ? N-CHANNEL POWER MOSFETS IRF220/221/222/223 FEA TU R ES • Low R d S o ii • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

Contextual Info: The information in this data sheet can change upon complete cahracterization and evaluation A A > IO C fA > IO C l\ U A U 4 o 3 |U 4 o 0 135MHz CMOS True-Color RAM PAC of this new product._ KDA0485 FEATURES ♦ 135,110, 85MHz Pixel Clock

OA 91 diode

Abstract: IRF220 IRF221 IRF222 5CH2 IRF223 8d050
Contextual Info: 7964142 SAMSUNG hfl DE I S E M ICONDUCTOR T T t i Ml MS □□□S Df l ' ì 0 5 0 8 9 _ d T - 3 ? 9 8 D I N C _ N-CHANNEL POWER MOSFETS 1 IRF220/221/222/223 FEATURES Low R d S o i i Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

44V4100

Contextual Info: KM44V4100BK CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a lamily ol 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle