7H DIODE Search Results

verilog code for max1619

Abstract: pci card schematic
Contextual Info: 1 CONTENTS 0H CHAPTER 1 1H 2H 3H 4H 6H 7H 8H 9H 50H 1.2 KEY FEATURES . 5 51H 1.3 BLOCK DIAGRAM . 6

Contextual Info: STB6NB90 N - CHANNEL 900V - 1 .7H - 5.8A - D^PAK _ PowerMESH MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id STB 6N B90 900 V < 2.0 a 5.8 A . = TYPICAL RDS(on) 1.7 £2 . EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES

200D-100

Abstract: 200D100 IEBo-400mA two transistors power transistor bjt 1000 a 1000v Transistor bjt fuji bjt vebo10v
Contextual Info: _ _ - _ 2-Pack BJT 2DI200D-100 '» A * I Outline Draw ings POWER TRANSISTOR MODULE : F e a tu re s • High Voltage t 7 ' J “ 7h>f U > *f ¥ 4 KrtJSt Including Free Wheeling Diode • ASO Excellent Safe Operating Area • Insulated Type I A p p licatio n s

ADC0884

Abstract: EOM1DB EOM1DB22 bcj diode ADC0852 ADC0854 ADC0854BJ ADC0854CJ J08A J14A
Contextual Info: SflE D NATL SEMICOND LINEAR bSDHEM P 5 l ' O n - O l Au fl Semiconductor ADC0852/ADC0854 Multiplexed Comparator with 8-Bit Reference Divider NSC 2 ADC0852/ADC0854 National MTb QQ?3^7h General Description The ADC0852 and ADC0854 are CMOS devices that com­

Contextual Info: SCHOTTKY BARRIER DIODE C25T03Q C25T04Q 2 7 .7 A / 3 0 ~ 4 0 V S Q U A R E-P A K FEATURES • Similar to TO-263AB Case, Surface Mount Device — 10.5C413 —^ ° Dual Diodes - Cathode Common o Low Forward Voltage Drop » \\\\N\WW 3 .7H 46)* 7 ° Low Power Loss, High Efficiency

transistor f485

Abstract: 853c
Contextual Info: [*XJ SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB861T51/OPB861T55 PACKAGE DIMENSIONS SEE NOTE 3 - '1 s Gp - -.3 1 3 (7.94) OPTICAL ' 1 2 5 (3 1 7H CENTERLIN E \ f.485 (12.32) f .110 (2.79) E— .345 (6.76) I r DESCRIPTION The OPB861T series of switches is designed to allow the

Hitachi DSA0074

Abstract: HAT2022R MS-012AA 40X40X
Contextual Info: ADE–208–440 F Z HAT2022R Silicon N Channel Power MOS FET 7h. Edition Jan. 1996 Application SOP–8 High speed power switching 8 5 7 6 Features • • • • 3 1 2 5 6 7 8 D D D D Low on–resistance Capable of 4V gate drive Low drive current High density mounting

Contextual Info: ADE–208–440 F Z HAT2022R Silicon N Channel Power MOS FET 7h. Edition Jan. 1996 Application SOP–8 High speed power switching 8 5 7 6 Features • • • • 3 1 2 5 6 7 8 D D D D Low on–resistance Capable of 4V gate drive Low drive current High density mounting

012AA

Contextual Info: A D E - 2 0 8 - 4 4 0 F Z HAT2022R Silicon N Channel Power MOS FET HITACHI Application 7h. Ed iti on J a n . 1996 SOP-8 High speed power switching Features • • • • Low on-resistance Capable of 4V gate drive Low drive current High density mounting

NJL56H400A

Abstract: NJL56H400 NJL57H400A IR led 940nm NJL56H380A NJL51H380A NJL57H400 NJL50HA
Contextual Info: N J L 51 H /51 V /5 5H /5 6H /5 7H 0 00 A INFRARED REMOTE CONTROL RECEIVER • GENERAL DESCRIPTION NJL50HA/000A series are small and high performance receiving devices for infrared remote control system. Regarding the transmission distance, NJL50H/V000A is longer than NJL50H/V000. The pulse width of

AM-1635

Contextual Info: MITEQ AM-1635 SERIES AMPLIFIER MODEL NUMBER GAIN dB (Min.) VAR. (±dB) (Max.) VSWR (Max.) IMPED. IN/OUT (Ohms) NOISE FIGURE (dB, Typ.) P1 dB (dBm) (Typ.) 200–1000 AM-1635-1000 14 0.5 2.0:1 50/50 3.3 27 15 235 7H 200–2000 AM-1635-2000 13 0.75 2.2:1 50/50

SG30TC

Contextual Info: Schottky Barrier Diode Twin Diode m n n . o u tlin e Package ! FTO-220G SG30TC 15M Unit : mm Weight 1.54g Typ nvhfB-SKW 15 0 V 3 0 A .4.5 Feature >Tj=150°C • Tj=150°C • 1 High lo Rating >7HÆ -J b K » » Full Molded 1 Low Ir=40|jA Ir=40|jA ' Resistance for thermal run-away

2n731

Abstract: MOSFET 7H
Contextual Info: ÎIÎ 2N7317D, 2N7317R 2N731 7H H A R R IS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS9140 D, R, H , « Radiation Hardened P-Channel Power MOSFETs December 1992 Package Features • 11A, -100V, RDS<on) = 0.315il TO-257AA • Second Generation Rad Hard MOSFET Result* From New Design Concepts

h7d marking

Contextual Info: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features W฀4EHB:M?:;฀8;IJ฀/ =L"a`#฀?D฀1, W฀ EM;IJ฀<?=KH;฀E<฀C;H?J฀/,+฀N฀.Y V !0฀8M\_Sj .) O R =L"a`#%_Sj )'*-)  -1 `< Q Y%fkb W฀2BJH7฀BEM฀=7J;฀9>7H=; W฀"NJH;C;฀:L :J฀H7J;:

diodes C712

Contextual Info: 7294 6 21 POWEREX INC 74 D E | 7H T +bE l □ 0 0 1 4 0 i T f l ^ | ~ HIGH SPEED Fast Recovery Rectifier 2000 Volts T-o3~z3 _ I A 6 9 6 ~1 1000 Amps The A696 Series of high power rectifier diodes is designed for use in high frequency applications up to 5 KHz ; or wherever a fast/soft recovery per­

smd diode marking JC

Abstract: DIODE BJE DIODE BJE smd marking JC diode df30sc3 smd marking 5G DF30SC3ML hm marking smd DIODE SHINDENGEN DIODE sto220
Contextual Info: Schottky Barrier Diode Twin Diode m n m DF30SC3ML o u tlin e Unit I mm Weight 1.5« Typ Package ! STO-220 0 7h£9(M ) 30V 30A Feature • SMD • SMD 0 45 V • < S V f= . • P rrsm 0 45V • Low V f= . 7 ’K 3 > î / x (S K î Polarity • P r r s m R a t in g

H3B SMD code

Abstract: BTS 131 SMD BTS 129 FC34 transistor smd H3b
Contextual Info: • 0235 bD 5 □ 1 0 3 3 ,ì 3 7HÖ SIEMENS T rilithIC BTS 774 P re lim in a ry D ata Overview Features • • • • • • • • • • • • • • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications

Z7 DIODE

Abstract: Diode RJ 4B KT234510 bipolar power transistor vce 600 volt 100a bipolar transistor 300 volt 5 ampere transistor
Contextual Info: POÜJEREX INC m *lñ tm w D E |7H 'ì4 b a i K DGD2D3H D | r " - 2 > 3 '2 .'J KT234510 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412)925-7272 S p l Í t mD U 3 ¡ B í p O l S t Transistor Module 100 Am peres/600 Volts Description Powerex Split-Dual Bipolar Transistor

BYW56

Abstract: marking JC diode BYW54 BYW55 PHILIPS BYW54
Contextual Info: b3E J> m b b S 3 T E 4 DD 7H 33 5 Tbì m S I C 3 BYW54 to 56 N A P C / P H I L I P S SE M I C O N D FOR D ETA ILED INFO R M ATIO N SEE THE LATEST ISSUE OF HANDBOOK SC01 OR DATASHEET CONTROLLED AVALANCHE RECTIFIER DIODES Double-diffused glass passivated rectifier diodes in herm etically sealed axial-leaded glass envelopes,

7H diode

Abstract: IPA50R140CP DIODE marking ED X9 diode marking BEM LM7m
Contextual Info: IPA50R140CP CoolMOSTM Power Transistor Product Summary Features W 4 EHB: M ?: ; 8;IJ/ =L"a`# ?D 1,   W EM ;IJ<?=KH; E<C ;H?J/ , + N . Y V !0 8M\_Sj .) O R =L"a`#%_Sj )'*-) " -1 `< Q Y%fkb W 2 BJH7 BEM =7J ; 9>7H=; W " NJH;C ; : L : JH7J;: W % ?=> F;7A 9KHH;DJ97F78?B?JO

UPC1394C

Abstract: SRW42ES uPC1394 nec tv diagram switching Regurator srw42es07
Contextual Info: E C EL EC TRON ICS INC 7H DEÍb4S7SES D O Gfltlt 2 | p i> W I . BIPOLAR ANALOG INTEGRATED CIRCU IT j u P C I >íwtá¿ií.'^bU:r-' 3 9 4 C SW ITC H IN G REGULATOR 1C FOR TV SET The jnPC1394C is a switching regurator IC especially designed fo r T V sets. It can be used fo r both type o f TV sets, insulated

upc1394c

Abstract: uPC1394 u703 T4E7
Contextual Info: E C EL EC TRON ICS INC 7H DEÍb4S7SES D O Gfltlt 2 | p i> W I . BIPOLAR ANALOG INTEGRATED CIRCU IT j u P C I >íwtá¿ií.'^bU:r-' 3 9 4 C SW ITC H IN G REGULATOR 1C FOR TV SET The jnPC1394C is a switching regurator IC especially designed fo r T V sets. It can be used fo r both type o f TV sets, insulated

LS2025

Abstract: ULS2013H 9732d ULS2003 UNL20
Contextual Info: . HIGH-VOLTAGE , HIGH-CUBRENT DARLINGTON ARRAYS 2001 2025 U L S 2 0 X X H /R I n— o Cl - - h e ] Ü L* - 1 a~\-L> °— T- — m l 3 — Tu I □ 3 - [ > M ~ —noi Q j ~7h —n n Dwg No A-9594 A B S O L U T E M A X I M U M R A T IN G S

LD25C

Contextual Info: blE MITSUBISHI J> 0Gm?7h m 1MT « H I T S FU-41SDF, FU-44SDF D I S C R E T E SC 1.3 n m DFB-LD Module with Singlemode Fiber Pigtail M odule ty p e F U -4 1 S D F a n d F U -4 4 S D F have been developed for coupling a singlem ode optical fiber a n d a 1.3wm w av elen g th InGaAsP DFB LD