7C325 Search Results

Contextual Info: 32Kx8 3.3V SRAM 7C3256 Logic Block Diagram Features ♦ High Performance CMOS: tAA=10-25 ns ♦ Fast OE access: t0 E=3-6 ns ♦ Very low power - 216 m W @ 100 M H z - 3.6 m W @ 10 M H z standby - 1.1 mW @ • I/07 10 M H z standby: L version ♦ Automatic CE power down

Contextual Info: High Performance 32KX83.3Y CMOS SRAM •■ II 7C3256 AS7G3256L L ow v o ltage 3 2 K x 8 C M O S SR A M Features • • • • O rganization: 32,7 6 8 w o rd s x 8 bits Single 3.3 ± 0.3V p o w e r supply 5V tolerant I /O specification H igh speed - 1 0 / 1 2 / 1 5 / 2 0 ns address access tim e

7C3256

Contextual Info: # $6:&6589 6169#65.ð;#&026#65$0 HDWXUHV • Easy memory expansion with CE and OE inputs • TTL-compatible, three-state I/O • Ideal for cache, modem, portable computing - 75% power reduction during CPU idle mode • 28-pin JEDEC standard packages - 300 mil PDIP and SOJ

Contextual Info: A Advance information •■ Il 7C3256K36P 7C3256K32P 3.3V 256Kx32/36 pipeline burst synchronous SRAM Features • Organization: 262,144 words x 32 or 36 bits • Fast clock speeds to 166 MHz in LVTTL/LVCMOS • Fast clock to data access: 3 .5 /3 .8 /4 /5 ns

MSM 6290

Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

6A14

Abstract: TSOP8
Contextual Info: Features • Organization: 32,768 words x 8 bits • Single 3.3 ± 0.3V power supply • High speed - 12 / 1 5 /2 0 ns address access time - 3 /4 /5 ns output enable access time • Very low power consumption - Active: 198 mW max, 12 ns cycle - Standby: 3.6 mW max, CMOS I/O

Contextual Info: $GYDQFHLQIRUPDWLRQ $6&.= $6&.= 9.ðV\QFKURQRXVEXUVW65$0ZLWK17'Œ  HDWXUHV • Multiple packaging options - Economical 100-pin TQFP package - Chip-scale fBGA package for smallest footprint • Byte write enables • Clock enable for operation hold

ADA17

Contextual Info: Advance information •■ I l 7C3256K36Z 7C3256K32Z A 3.3V 2 5 6 K x 32/36 synchronous burst SRAM with ZBT1 Features Multiple packaging options - Economical 100-pin TQFP package - Chip-scale fBGA package for smallest footprint Byte write enables Qock enable for operation hold

7C601

Abstract: C32S CY7C325 C3253
Contextual Info: PRELIMINARY £25 CYPRESS SEMICONDUCTOR • Timing Control Unit, Clock Genera­ tor for CY7C601A and CY7C611A SPARC processors • Supports 25-, 33-, 40-MHz operation • Simplifies interface to slow memory and peripherals by eliminating the need for wait-state logic

Contextual Info: Il High Perform ance 32Kx8 CMOS SRAM 7C3256 3.3V 32K x8 C M O S SR A M C o m m o n I/O I F E A T U R E S _ • Single 3.3V + 0.3V Power Supply • 2.0V Data Retention • Organization: 32,768 words x 8 bits • TTL compatible I/O

A301D

Abstract: A211D PF351 AS7C3256K18Z-3 A210D TCDF
Contextual Info: $GYDQFHLQIRUPDWLRQ $6&.= $6&.= 9.ðV\QFKURQRXVEXUVW65$0ZLWK17'Œ HDWXUHV /RJLFEORFNGLDJUDP 3LQDUUDQJHPHQW D LB0 Address register Q 17 NC NC NC CLK CE0 VDDQ VSSQ NC NC DQb DQb VSSQ VDDQ DQb DQb FT VDD VDD VSS DQb DQb VCCQ

351N

Abstract: FBGA-F
Contextual Info: Advance information •■ I l A 7C3256K36Z A 7C3256K32Z I 3.3V 2 5 6 K x 3 2 /3 6 synchronous burst SRAM with ZB T1 Features • • • • • • • • • M ultiple p ackagin g op tion s - Econom ical 100-pin TQFP package - C hip-scale fBGA package for sm allest footprint

27HC642

Abstract: 39C10B PAL22V10APC CY2254SC-1 7132SA70 93L422AM 7024S15 7130SA25 7C198-45C 7006S
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+

Contextual Info: H ig h P e r f o r m a n c e 3 2 K x 8 3 .3 V C M O S SR AM a i A S7C 3256 A Low voltage 3 2K X 8 CMOS SRAM • T T L -co m p atib le, th re e -s ta te I / O • S ingle 3 .3 ± 0 .3 V p o w e r s u p p ly • Id eal f o r cache, m o d e m , p o rta b le c o m p u tin g

32kx8 sram

Contextual Info: High Performance 32KX8 3.3V CMOS SRAM « II AS7C32S6 7C3256L « Low voltage 32Kx8 CMOS SRAM Features • O rganization: 3 2 ,7 6 8 w o rd s x 8 bits • Equal access and cycle tim es • Single 3 .3 ± 0.3V p o w e r su pp ly • Easy m em o ry ex p a n sio n w ith CE and OE in pu ts

Contextual Info: Hi gh p e r f o r m a n c e 4 M b s y nc hr on ou s CMOS SRAM 7C3256KJ6P 7C3256K18P H '> _ 2 5 6 X X 1 6 / 18 p ip e lin e b u rst synchronous SR A M Advance information Features • O r g a n iz a tio n : 2 6 2 , 1 4 4 w o r d s

Contextual Info: Advance information •■ I l 7C3256K16P 7C3256K18P I 3.3V 2 5 6 K x 1 6 /1 8 pipeline burst synchronous SRAM Features • • • • • • • • • • O rg an izatio n : 2 6 2 ,1 4 4 w o rd s x 16 o r 18 bits Fast clock speeds to 166 M H z in LVTTL/LVCMOS

Contextual Info: H!gh Performance 32KxS 3.3V CMOS SRAM p i 7C3256 7C3256L Low Voltage 32Kx8 CMOS SRAM Common I/O FEATURES • Organization: 32,768 words x 8 bits • Equal access and cycle times • Single 3.3 ±0.3V power supply • Easy memory expansion with CE and OE inputs

Contextual Info: 7C3256 3.3V 32Kx8 CMOS SRAM 1O rganization: 3 2 ,7 6 8 w ords x 8 bits 1Single 3.3 ± 0.3V pow er supply 1H igh speed - 1 2 /1 5 /2 0 ns address access tim e - 3 / 4 / 5 ns output enable access tim e 1Very low pow er consum ption - Active: 198 m W max, 12 ns cycle

Contextual Info: Advance information Features • B yte w r ite en ab les • C lock e n a b le fo r o p e r a tio n h o ld • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s x 16 o r 18 b its • Fast d o c k sp e e d s to 1 6 6 M H z in LVTTL/LVCMOS • Fast d o c k to d a ta access: 3 . 5 / 3 . 8 / 4 / S ns

Contextual Info: Advance inform ation Features • • • • • • • • • • • • • • • • • • • Organization: 2 6 2 ,1 4 4 w ords x 1 6 /1 8 bits ZBT architecture for efficient bus operation Fast clock speeds to 166 MHz Fast clock to data access: 3 .S / 3 . 8 / 4 / 5 ns

A301D

Abstract: A211D
Contextual Info: $GYDQFHLQIRUPDWLRQ $6&.3 $6&.3 9.ðSLSHOLQHEXUVWV\QFKURQRXV65$0 HDWXUHV • Byte write enables • Clock enable for operation hold • Multiple chip enables for easy expansion • 3.3V core power supply • 2.5V or 3.3V I/O operation with separate VDDQ

M140 Blue Laser Diode

Abstract: 12 volt electronic ballast for fluorescent light ledinta0350c425 philips xitanium 150W 1-10V XI040C070V056CNJ1 M140 laser diode t5 94v-0 tv philips
Contextual Info: Lighting Electronics Atlas A Full Line Catalog of LED Drivers, LED Modules, Ballasts and Lighting Controls 2014-2015 Contents Philips Advance LED Drivers Page 1-1 Philips LED Modules Page 2-1 Philips Advance Electronic Fluorescent Ballasts Page 3-1 Philips Advance Electronic Fluorescent Controllable Ballasts

20014a

Abstract: 7C3256 32KX8 AS7C3256 AS7C32S6
Contextual Info: H ig h P e r f o r m a n c e 3 2 K x 8 3 .3 V C M O S SRAM . . A S7C 3256 II Jn L Low voltage 32K X 8 CMOS SRAM • TTL-com patible, three-state I /O • Ideal for cache, m odem , portable com puting - 75% p ow er reduction d uring CPU idle m ode • 2 8 -p in JEDEC standard packages