7A SF Search Results

Contextual Info: FRS9240D, FRS9240R, FRS9240H 7A, -200V, 0.735 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 7A, -200V, RDS on = 0.735£i TO-257AA • Second G eneration Rad Hard M O SFET Results From New Design Concepts • G am m a - Meets Pre-Rad Specifications to 100KRAD(Si)

STGP7NB60H

Contextual Info: STGP7NB60H N-CHANNEL 7A - 600V - TO-220 PowerMESH IGBT TYPE STGP7NB60H • ■ ■ ■ ■ ■ ■ ■ ■ VCES VCE sat IC 600 V < 2.8 V 7A HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY

STGD7NB60H

Contextual Info: STGD7NB60H N-CHANNEL 7A - 600V - DPAK PowerMESH IGBT TYPE STD7NB60H • ■ ■ ■ ■ ■ ■ ■ ■ VCES VCE sat IC 600 V < 2.8 V 7A HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY

TS PQ4 24

Abstract: 3885 pj 56 diode pj diode J78B fdk IDF
Contextual Info: <:113:/E0E< ?=@=5EFC9 <=;< BAH9C C9>5I `{-4cggkwc0e0ya :NKXYVNW Z Z Z Z Z Z Z Z Z Z w?B; *Edp vgijkgm w?B; *Edpggloij w?B; *Edpt-tfhffgffgokg 7A=> 7A@E57E 85E5 tEDJ79J 7HH7D=;C;DJ grb gt tEDJ79J H;I?IJ7D9; tE?B FEM;H ywggkwc0yp hkfC3q ywggkwc0p jffC3 gffC `7J gr l2uta

Green

Abstract: SMBJ11CA BAS70WT S1B40 UF5406T MTZJ10A SMBJ14CA SMBJ16CA SMBJ160CA SMBJ13CA
Contextual Info: MCC's EU RoHS and Green Halogen Antimony Free Parts List Package RoHS Compliant EU RoHS Exemption Code 1.5KE10-TP/AP/BP DO-201AE X 7a Matte Tin 1.5KE100-TP/AP/BP DO-201AE X 7a 1.5KE100A-TP/AP/BP DO-201AE X 1.5KE100C-TP/AP/BP DO-201AE 1.5KE100CA-TP/AP/BP

l4970

Abstract: L4977 TRANSISTOR UO 112 THOMSON ui35 L4974 40KHZ L4377 0d22B 7e2e 18KA
Contextual Info: • YTSTHB? Q O a S tiQ M L. S G S -T H O M S O N G " S S 'U - 3 1 L4977 3DE » S-THOMSON 7A SWITCHING REGULATOR ADVANCE DATA 7A OUTPUT CURRENT 5.1V TO 40V OUTPUT VOLTAGE RANGE 0 TO 90% DUTY CYCLE RANGE INTERNAL FEED-FORWARD LINE REGULA­ TION INTERNAL CURRENT LIMITING

Contextual Info: <://3:B ?=@=5EFC9 BAH9C C9>5J :PL\]ZP[ i i i i i i i i i Ifib Ql6B H9;<@9 G 8 9 Ifib Ql6B 99>A;< 7A=> 7A@E57E 85E5 9F Flkq^`q ^oo^kdbjbkq Flkq^`q obpfpq^k`b :F 988j j^u60^q 9D >YGF1 Flkq^`q j^qbof^i DdQf Flkq^`q o^qfkd 0Ubp6 il^a1 9>D :=8YDF @D :=8YDF P^u6 ptfq`efkd sliq^db

ASTM A123

Abstract: D2863-77 bussmann smd 5A fuse with solder leads FC5312 BUSS SFT 5A 125V BUSS SFT 10A FC-5312 buss sft buss sft 2A 125V
Contextual Info: Bussmann SMD TRON® Surface Mount Fuses SFT For .170” x .294” 4.32mm x 7.47mm Fuses R 12.5A 7A 10A AMPERE RATING 1A 1.5A 2A 2.5A 3A 3.5A 5A 10 250mA 375mA 500mA 750mA Time-Current Characteristic CurvesÐAverage Melt (Full Size Curves Available) Catalog Symbol:

Contextual Info: STGP7NB60H N-CHANNEL 7A - 600V - TO-220 PowerMESH IGBT TYPE STGP7NB60H V CES VcE sat lc 60 0 V < 2.8 V 7 A . HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) . LOW ON-VOLTAGE DROP (Vcesat) . . . . LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION

Contextual Info: STW8NB80 N - CHANNEL 800V - 1 .2û - 7A - TO-247 _ PowerMESH MOSFET PRELIMINARY DATA TYPE V dss STW8NB80 . . . . . 800 V R d S oii < 1.6 = a Id 7 A TYPICAL RDS(on) 1.2 £2 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

toshiba date code marking

Contextual Info: T O S H IB A CRG01,CRG02 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE CRG01, CRG02 Unit in mm GENERAL PURPOSE RECTIFIER APPLICATIONS • • • Average Forward Current : Ip AV = 0-7A Repetitive Peak Reverse Voltage : V = 100, 400V Small Package : “S-FLAT” (Toshiba designation)

Contextual Info: STD7NS20 N - CHANNEL 200V - 0.35ft - 7A - DPAK _ MESH OVERLAY MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id S TD 7N S20 200 V < 0.40 a 7 A • . . . . . TYPICAL RDS(on) = 0.35 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

Contextual Info: FUJI s ik ô iE ir ü ô U Ê 2SK2766-01R N-channel MOS-FET FAP-IIS Series 800V 7A High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated 55 .3.5 0.6 > Applications -

ALLEN BRADLEY

Abstract: 175150-1 Thais schematic SMPS 24V 50w E2713 RWR81 smps control ic with 6 pin sip SMPS SCHEMATIC DIAGRAM 36 Volt
Contextual Info: HIP5061 Semiconductor 7A, High Efficiency Current Mode Controlled PWM Regulator Features Description • Single Chip Current Mode Control IC The HIP5061 is a complete power control IC, incorporating both the high power DMOS transistor, CMOS logic and low level analog circuitry on the same Intelligent Power IC. The

Tr K 970

Abstract: DIODE 4d
Contextual Info: Complementary MOSFET ELM34601AA-N • General D escription ■ Features ELM 34601AA-N uses advanced tre n c h technology to provide excellent Rds on and low gate charge. N -channel P-channel Vds=30V Id=7A Rds(on) < 21mQ(Vgs=10V) Rds(on) < 32mQ(Vgs=4.5V) Vds=-30V

IRF840R

Abstract: RF840 IRF840 IRF841R IRF842R IRF843R M2R DIODE
Contextual Info: Rugged Power MOSFETs IRF840R, IRF841R IRF842R, IRF843R File N u m b er 2034 Avalanche Energy Rated N-Channel Power MOSFETs 8A and 7A, 500V-400V rDs on = 0.850 and 1.10 TE R M IN A L DIAGRAM Features: • ■ ■ ■ ■ Single pulse avalanche energy rated

IRF4431

Abstract: IRF44 IRF442R IRF 426 441F IRF440R IRF441R IRF443R RF440 rf44
Contextual Info: _Rugged Power MOSFETs File N u m b er 2007 IRF440R, IRF441R, IRF442R, IRF443R Avalanche Energy Rated N-Channel Power MOSFETs 8A a nd 7A, 500V-400V rDs on = 0 .8 5 f) and 1 .1 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

PD78217A

Abstract: PD78218 matsua stepping motors 27525g PD78P218 IEU-1313
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿iPD782!7A,78218A 8-BIT SINGLE CHIP MICROCONTROLLER DESCRIPTION The ¿/PD78217A and 78218A are members of the 78K/II series of microcontrollers featuring a high-speed highperformance CPU. The^PD78217Aand 78218A are based on the|iPD78213 and 78214, and feature increased memory

Contextual Info: FU JI 2SK2765-01 S iL tìls u U tìU K FAP-IIS Series N-channel MOS-FET > Features - 20, 800V 7A 125W > Outline Drawing TO-3P High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated

Contextual Info: STP7NE10L N - CHANNEL 100V - 0.3 i l - 7A - TO-220 _ STripFET POWER MOSFET PRELIMINARY DATA TYPE S TP 7N E10L • . . . . V dss R dS oii Id 100 V < 0.4 a 7 A TYPICAL R D S (on) = 0.3 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED

DM162-4A

Abstract: DP20-13AR DP35-13AR ea 7242 DP40-18AR dp352 DP-45 DP35-13A dp602 DP37-13AR
Contextual Info: LCD-STANDARDGLÄSER 4.2003 LCD-STANDARDGLÄSER EA DM162-4A EA DL41-7A EA DL42-9A LO BAT EA DP40-25A EA DL60-9A EA DP35-13A LC-Glas Typ EA DP20-13AR Stellen Zeichen Abmessung passender zahl höhe B x H [mm] Rahmen 2 13 mm 28,0 x 30,5 Zubehör: Beleuchtung Kontaktierung

OM8P20A

Abstract: OM2P50A 3ssr
Contextual Info: O M NI RE L CORP H3£ ]> t>7a^0?3 H• 00DGS24 OMNI OM2P50A OM8P2QA POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-254 PACKAGE ^ 200V/500V, Up To 8 Amp; P-Channel MOSFET^ FEATURES D O • Isolated Hermetic Metal Package • P-Channel • Fast Switching, Low Drive Current

Contextual Info: STP7NE10 N - CHANNEL 100V - 0.3 i l - 7A - T0-220 _ STripFET POWER MOSFET PRELIMINARY DATA TYPE S T P 7 N E 10 • . . . . V dss R dS oii Id 100 V < 0.4 a 7 A TYPICAL R D S (on) = 0.3 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED

2SK2766-01R

Abstract: DS800
Contextual Info: FUJI 2SK2766-01R N-channel M O S-FET ö iu m e u t j c s u k FAP-IIS Series 800V > Features - 2Q 7A 80W > Outline Drawing TO-3PF High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 30V Guarantee Repetitive Avalanche Rated