7A SF Search Results

STGP7NB60H

Contextual Info: STGP7NB60H N-CHANNEL 7A - 600V - TO-220 PowerMESH IGBT TYPE STGP7NB60H • ■ ■ ■ ■ ■ ■ ■ ■ VCES VCE sat IC 600 V < 2.8 V 7A HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY

STGD7NB60H

Contextual Info: STGD7NB60H N-CHANNEL 7A - 600V - DPAK PowerMESH IGBT TYPE STD7NB60H • ■ ■ ■ ■ ■ ■ ■ ■ VCES VCE sat IC 600 V < 2.8 V 7A HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY

ASTM A123

Abstract: D2863-77 bussmann smd 5A fuse with solder leads FC5312 BUSS SFT 5A 125V BUSS SFT 10A FC-5312 buss sft buss sft 2A 125V
Contextual Info: Bussmann SMD TRON® Surface Mount Fuses SFT For .170” x .294” 4.32mm x 7.47mm Fuses R 12.5A 7A 10A AMPERE RATING 1A 1.5A 2A 2.5A 3A 3.5A 5A 10 250mA 375mA 500mA 750mA Time-Current Characteristic CurvesÐAverage Melt (Full Size Curves Available) Catalog Symbol:

Contextual Info: STW8NB80 N - CHANNEL 800V - 1 .2û - 7A - TO-247 _ PowerMESH MOSFET PRELIMINARY DATA TYPE V dss STW8NB80 . . . . . 800 V R d S oii < 1.6 = a Id 7 A TYPICAL RDS(on) 1.2 £2 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

toshiba date code marking

Contextual Info: T O S H IB A CRG01,CRG02 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE CRG01, CRG02 Unit in mm GENERAL PURPOSE RECTIFIER APPLICATIONS • • • Average Forward Current : Ip AV = 0-7A Repetitive Peak Reverse Voltage : V = 100, 400V Small Package : “S-FLAT” (Toshiba designation)

Contextual Info: STD7NS20 N - CHANNEL 200V - 0.35ft - 7A - DPAK _ MESH OVERLAY MOSFET PRELIMINARY DATA TYPE V dss R dS oii Id S TD 7N S20 200 V < 0.40 a 7 A • . . . . . TYPICAL RDS(on) = 0.35 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

Contextual Info: FU JI 2SK2765-01 S iL tìls u U tìU K FAP-IIS Series N-channel MOS-FET > Features - 20, 800V 7A 125W > Outline Drawing TO-3P High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated

Contextual Info: STP7NE10L N - CHANNEL 100V - 0.3 i l - 7A - TO-220 _ STripFET POWER MOSFET PRELIMINARY DATA TYPE S TP 7N E10L • . . . . V dss R dS oii Id 100 V < 0.4 a 7 A TYPICAL R D S (on) = 0.3 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED

DM162-4A

Abstract: DP20-13AR DP35-13AR ea 7242 DP40-18AR dp352 DP-45 DP35-13A dp602 DP37-13AR
Contextual Info: LCD-STANDARDGLÄSER 4.2003 LCD-STANDARDGLÄSER EA DM162-4A EA DL41-7A EA DL42-9A LO BAT EA DP40-25A EA DL60-9A EA DP35-13A LC-Glas Typ EA DP20-13AR Stellen Zeichen Abmessung passender zahl höhe B x H [mm] Rahmen 2 13 mm 28,0 x 30,5 Zubehör: Beleuchtung Kontaktierung

OM8P20A

Abstract: OM2P50A 3ssr
Contextual Info: O M NI RE L CORP H3£ ]> t>7a^0?3 H• 00DGS24 OMNI OM2P50A OM8P2QA POWER MOSFET IN HERMETIC ISOLATED JEDEC TO-254 PACKAGE ^ 200V/500V, Up To 8 Amp; P-Channel MOSFET^ FEATURES D O • Isolated Hermetic Metal Package • P-Channel • Fast Switching, Low Drive Current

Contextual Info: STP7NE10 N - CHANNEL 100V - 0.3 i l - 7A - T0-220 _ STripFET POWER MOSFET PRELIMINARY DATA TYPE S T P 7 N E 10 • . . . . V dss R dS oii Id 100 V < 0.4 a 7 A TYPICAL R D S (on) = 0.3 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED

2SK2766-01R

Abstract: DS800
Contextual Info: FUJI 2SK2766-01R N-channel M O S-FET ö iu m e u t j c s u k FAP-IIS Series 800V > Features - 2Q 7A 80W > Outline Drawing TO-3PF High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V g s = ± 30V Guarantee Repetitive Avalanche Rated

Contextual Info: STU7NA90 N - CHANNEL 900V - 1.05 £2 - 7A - Max220 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V dss R d S oii STU 7N A 90 900 V < 1.3 a Id 7 A TYPICAL R D S (on) = 1.05 . ± 30V GATE TO SOURCE VOLTAGE RANTING . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C

2SB921

Abstract: 45Qn 50Qn
Contextual Info: O rdering n u m b e r:, ÉN1797B 2SB921L/2SD1237L N 0 .1 7 9 7 B PNP/NPN Epitaxial Planar Silicon Transistors SANYO i 80V/7A Switching Applications A P P L IC A T IO N S • Suitable fo r relay drivers, high-speed inverters, converters, and other general large-current switching applications

Contextual Info: HARRIS SEniCOND SECTOR Sfl E HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS230 D, R, H D • 4 3 D2 E 7 1 DDMSbf l T *432 « H A S 2N7276D, 2N7276R 2N7276H December 1992 Radiation Hardened N-Channel Power MOSFETs Package

7A SF 51

Abstract: 7A SF 5A SF SF-0603F300-2 SF-1206F300-2 SF-1206 Battery chargers china portable DVD circuit diagram SMD Resettable Fuses 0603 kl SN 102 lcd Battery chargers for portable dvd china
Contextual Info: Bourns SinglFuse Thin Film Chip Fuse Short Form Brochure Bourns® SinglFuse™ Products What's New in this Edition B • SF-0402F Series 0402 fast acting fuses • SF-0402S Series 0402 slow blow fuses • SF-0603F Series 0603 fast acting fuses • SF-0603S Series 0603 slow blow fuses

npn phototransistor sfh 309

Abstract: LLA 950 SFH Siemens
Contextual Info: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor SFH 309 P SFH 309 PFA Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 380 nm bis 1180 nm

siemens SFH nm

Contextual Info: SIEMENS Logic Gate Detector SFH 5400 Vorläufige Daten / Preliminary Data Photosensitive area 0.5 x 0.5 OUT GE006966 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features • Geeignet für Anwendungen im Bereich von

IRGBC36

Abstract: IRGBC46 IRGBC30 THOMSON 58E 02073 IRGPC50 IRGPC56 IRGPC THOMSON DISTRIBUTOR 58e d IRGBC20
Contextual Info: T H OH SO N/ ^D 2b a? 3 D O G S ? T b 4T4 • SflE D DISTRIBUTOR TCSK International llORl Rectifier Insulated Gate Bipolar Transistor Standard & Fast Processes VcE oo VQE(Ui) Gate to Emlttar Threshold Vottage Collector to Emitter Sateratkm Max (V) Typ 00

1SS99

Abstract: DAP 7a 1ss97 1ss98 1SS101 1SS106 1SS14 1ss43 1SS87 7A SF
Contextual Info: - * m % tt 1S1659 1SI 8 58 1SI 8 60 1S1992 1S1993 BU BU BM 1S1994 1S1995 1S2198 1S2203 1S2210 a m a m 1S2211 ISSI 2 1SS13 1SS14 1SS15 BG . 1 SS 16 1SS23 1SS43 1SS69 1SS70 s s s s s 1SS78 1SS86 1SS87 1SS88 1SS90 s m B * B ±L Q 3 un un, a m B m a m BM s m m

Contextual Info: I . I» I Provisional Data Sheet No. PD 9 .1 292B International l R Rectifier HEXFET PO W ER M O S FE T IRFY440CM N-CHANNEL Product Summary 500 Volt, 0.85Î2 H E X F E T HEXFET technology is the key to International Rectifier’s advanced line of power M O SFET transistors. The effi­

IDEC RH2B-UL

Abstract: RELAY PCB DPDT 12V RH2b-ut RH1B-UT Idec RH2B-U rh2b-u spdt relays 12v SH1B-05A 6v spdt relay rh1b-u
Contextual Info: Relays RH Series RH Series — General Purpose Midget Relays Key features of the RH series include: • Compact midget size saves space • High switching capacity 10A • Choice of blade or PCB style terminals • Relay options include indicator light, check button, and top

LF155A

Abstract: sn 357 LF155A/LT EM 257 LF156AN LF356T sn* 357
Contextual Info: LF155/A/156/A/157/A, LF255/256/257, LF355/A/356/A/357/A-T LF155A COMMON FEATURES APPLICATIONS Precision high speed integrators Fast A/D, D/A converters High impedance buffers Wideband, low noise, low drift amplifier EQUIVALENT SCHEMATIC 7 6 o) n ~ ~ I rGi T

FSP200-50SNV

Abstract: sparkle SFX12V FSP200-50SN
Contextual Info: Sparkle Power Inc. A Leading Power Supply manufacturer Web site: www.sparklepower.com FSP200-50SNV 200 Watts SFX12V Switching Power Supply Features Specification • Complied with SFX and SFX12V standard • • High efficiency and reliability • Remote On/Off function