75P DIODE Search Results

PSMN005-75P

Abstract: 75p diode PSMN005-75B
Contextual Info: PSMN005-75P/75B N-channel enhancement mode field-effect transistor Rev. 01 — 26 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PSMN005-75P in SOT78 TO-220AB

03ad10

Abstract: PSMN008-75B PSMN008-75P
Contextual Info: PSMN008-75P; PSMN008-75B N-channel enhancement mode field-effect transistor Rev. 01 — 18 September 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

HZG469

Abstract: PSMN008-75B PSMN008-75P 75b diode 75p diode
Contextual Info: PSMN008-75P/75B TrenchMOS standard level FET Rev. 03 — 08 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package.

75P-140

Abstract: 2mbi 2MBI 75P-140
Contextual Info: 2-Pack IGBT 1400V 75A 2MBI 75P-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications • High Power Switching

PSMN008-75P

Abstract: 75p diode
Contextual Info: PSMN008-75P N-channel TrenchMOS SiliconMAX standard level FET Rev. 04 — 10 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for

PSMN005-75P

Contextual Info: PSMN005-75P N-channel TrenchMOS SiliconMAX standard level FET Rev. 01 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for

16PIN

Abstract: 74F175 SOL16 TC74ACT175
Contextual Info: INTEGRATED TOSHIBA QUAD TECHNICAL D -T Y P E FLIP TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT CIRCUIT FLOP TC74ACT1 75P/F/FN DATA SILICON MONOLITHIC WITH CLEAR The TC74ACT175 is an advanced high speed CMOS QUAD D-TYPE FLIP FLOP fabricated with silicon gate and double layer metal wiring C2MOS technology.

Contextual Info: INTEGRATED TOSHIBA Q U AD TECHNICAL D -T Y P E FLIP TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT CIRCUIT FLOP TC74AC1 75P/F/FN/FS DATA SILICON MONOLITHIC WITH CLEAR The TC74AC175 is an advanced high speed CMOS QUAD DTYPE FLIP FLOP fabricated with silicon gate and double layer metal wiring C2MOS technology.

74F175

Abstract: SOL16 SSOP16 TC74AC175
Contextual Info: INTEGRATED T O SH IB A QUAD TECHNICAL D -T Y P E FLIP TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT CIRCUIT T C 7 4 A C 1 75P/F/FN/FS DATA SILICON MONOLITHIC FLOP WITH CLEAR The TC74AC175 is an advanced high speed CMOS QUAD DTYPE FLIP FLOP fabricated with silicon gate and double layer metal wiring C2MOS technology.

Contextual Info: INTEGRATED T O SH IB A QUAD TECHNICAL D -T Y P E FLIP TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT CIRCUIT FLOP T C 7 4 A C T 1 75P/F/FN DATA SILICON MONOLITHIC WITH CLEAR The TC74ACT175 is an advanced high speed CMOS QUAD D-TYPE FLIP FLOP fabricated with silicon gate and double layer m etal wiring C2MOS technology.

Contextual Info: INTEGRATED T O SH IB A QUAD TECHNICAL D -T Y P E FLIP TO SH IBA CM O S DIGITAL INTEGRATED CIRCUIT CIRCUIT FLOP T C 7 4 A C 1 75P/F/FN/FS DATA SILICON M ONOLITHIC WITH CLEAR The TC74AC175 is an advanced high speed CMOS QUAD DTYPE FLIP FLOP fabricated with silicon gate and double layer metal wiring C2MOS technology.

diode zener 27c

Abstract: 27c diode ZENER DIODE 27c
Contextual Info: BZD27C3V6P~BZD27C75P VOLTAGE REGULATOR DIODES POWER 3.6 to 75 Volts VOLTAGE 800 mW SOD-123FL Unit：inch mm • Low profile surface-mount package 0.115(2.90) 0.106(2.70) • Zener and surge current specification • Low leakage current 0.043(1.08) 0.038(0.98)

Contextual Info: 2322593.4616 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage750 V(RMS) Max. Applied Voltage460 V(DC) Max. Applied Voltage615 I(TM) Max.(A) Peak Current1.2k V(C) Nom. (V) Clamping Voltage1.24k @I(PP) (A) (Test Condition)10 W(TM) Max.(J) Transient Energy63

Contextual Info: • P h ilip s S e m ico n d u cto rs ., 1^53^31 DQ24301 IbT APX P rodu ct sp e cifica tio n AUER PHILIPS/DISCRETE b?E D ^ — Schottky barrier diodes FE A T U R E S — BAS70 series Q U IC K R E F E R E N C E DATA • Low leakage current SYM BOL • Low turn-on and high breakdown

TC227

Contextual Info: MAX3940 I/O Model SPICE I/O Macromodels aid in understanding signal integrity issues in electronic systems. Most of Maxim’s High Frequency/Fiber Communication ICs utilize input and output I/O circuits with Current Mode Logic (CML), Positive Emitter Coupled Logic

BAS70 73p

Contextual Info: Philips Semiconductors Product specification Schottky barrier double d iod es FEATURES B A S 7 0 series PINNING SOT23 (see Fig.la) • Low forward current DESCRIPTIO N • High breakdown voltage PIN • Guard ring protected BAS70 BAS70-04 BAS70-05 BAS70-06

QUBiC4X

Abstract: BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 printed antenna dcs 1800 BLP7G10S-140P BLF578XR qubic4 BGU705 Thin Film Resistors SiCr
Contextual Info: Your partner in mobile communication infrastructure design High Performance RF for wireless infrastructure Looking for a partner who can help you meet the challenges of wireless infrastructure base station design? As a global leader in RF technology and component design, NXP Semiconductors offers

BAS70

Abstract: BAS70-04 BAS70-05 BAS70-06 BAS70-07
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 M3D071 BAS70 series Schottky barrier double diodes Product specification Supersedes data of 1996 Oct 01 1999 Jun 01 Philips Semiconductors Product specification Schottky barrier (double) diodes BAS70 series PINNING

Contextual Info: N E pPD75316 Family #iPD75304/306/308/312/316/P308/P316/P316A 4-Bit, Single-Chip Microcontrollers W ith LCD Controller/Driver C NEC Electronics Inc. March 1994 Description The yjPD75316 fam ily of high-perform ance 4-bit single chip CMOS m icrocontrollers includes the follow ing

2SC1675L

Abstract: 2N2196 2N2214 2N2161 2N2204 LOW-POWER SILICON NPN BF235 TL3643 2n2222 to92 BFX97
Contextual Info: RF LOW-POWER SILICON NPN Item Part Number Number V BR CEO 5 10 15 20 PN2221 2N2218 BSX60 2N2846 2N3015 MPS2222 MPS6532 2N2845 MMBT2222 2N2961 PH2222 UPI2218 2N2219 2N2538 2N3981 2N3981 2N3981 2SC773 2N5028 2N5028 ~~~g~ 25 30 35 -40 45 50 2N2960 A5T2222 BFX94A

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

LFX200B-03f256i

Abstract: D 92 02 78P DIODE PAIR 16X1 16X2 05F256
Contextual Info: ispXPGA Family TM September 2003 Preliminary Data Sheet • Non-volatile, Infinitely Reconfigurable ■ Eight sysCLOCK Phase Locked Loops PLLs for Clock Management • Instant-on - Powers up in microseconds via on-chip E2CMOS based memory • No external configuration memory

booth multiplier

Abstract: 97p sped 16X1 16X2 LFX200B-03f256i e30 c15 100 12p
Contextual Info: ispXPGA Family TM January 2004 Preliminary Data Sheet • Non-volatile, Infinitely Reconfigurable ■ Eight sysCLOCK Phase Locked Loops PLLs for Clock Management • Instant-on - Powers up in microseconds via on-chip E2CMOS based memory • No external configuration memory

Contextual Info: ispXPGA Family TM July 2003 Preliminary Data Sheet • Non-volatile, Infinitely Reconfigurable ■ Eight sysCLOCK Phase Locked Loops PLLs for Clock Management • Instant-on - Powers up in microseconds via on-chip E2CMOS based memory • No external configuration memory