75P DIODE Search Results

PSMN005-75P

Abstract: 75p diode PSMN005-75B
Contextual Info: PSMN005-75P/75B N-channel enhancement mode field-effect transistor Rev. 01 — 26 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PSMN005-75P in SOT78 TO-220AB

03ad10

Abstract: PSMN008-75B PSMN008-75P
Contextual Info: PSMN008-75P; PSMN008-75B N-channel enhancement mode field-effect transistor Rev. 01 — 18 September 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

Contextual Info: PSMN008-75P; PSMN008-75B N-channel enhancement mode field-effect transistor Rev. 01 — 18 September 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

HZG469

Abstract: PSMN008-75B PSMN008-75P 75b diode 75p diode
Contextual Info: PSMN008-75P/75B TrenchMOS standard level FET Rev. 03 — 08 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package.

75P-140

Abstract: 2mbi 2MBI 75P-140
Contextual Info: 2-Pack IGBT 1400V 75A 2MBI 75P-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications • High Power Switching

2MBI 75P-140

Abstract: A1000T
Contextual Info: 2-Pack IGBT 1400V 75A 2MBI 75P-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications • High Power Switching

PSMN008-75P

Abstract: 75p diode
Contextual Info: PSMN008-75P N-channel TrenchMOS SiliconMAX standard level FET Rev. 04 — 10 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for

PSMN005-75P

Contextual Info: PSMN005-75P N-channel TrenchMOS SiliconMAX standard level FET Rev. 01 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for

2mb175p-140

Abstract: 2MBI 75P-140 75P-140 1400V 2mb175 2mb175p Z125 2MBI75P-140 IGBT parallel ts125
Contextual Info: F U JI 2MBI 75P-140 IGBT MODULE P-Series n 2-Pack IGBT 1400V 75A Outline Drawing n Features • Square SC SO/A at 10 x l c • Simplified Parallel Connection • Narrow Distribution o f Characteristics • High Short Circuit Withstand-Capability n Applications

16PIN

Abstract: 74F175 SOL16 TC74ACT175
Contextual Info: INTEGRATED TOSHIBA QUAD TECHNICAL D -T Y P E FLIP TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT CIRCUIT FLOP TC74ACT1 75P/F/FN DATA SILICON MONOLITHIC WITH CLEAR The TC74ACT175 is an advanced high speed CMOS QUAD D-TYPE FLIP FLOP fabricated with silicon gate and double layer metal wiring C2MOS technology.

Contextual Info: INTEGRATED TOSHIBA Q U AD TECHNICAL D -T Y P E FLIP TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT CIRCUIT FLOP TC74AC1 75P/F/FN/FS DATA SILICON MONOLITHIC WITH CLEAR The TC74AC175 is an advanced high speed CMOS QUAD DTYPE FLIP FLOP fabricated with silicon gate and double layer metal wiring C2MOS technology.

74F175

Abstract: SOL16 SSOP16 TC74AC175
Contextual Info: INTEGRATED T O SH IB A QUAD TECHNICAL D -T Y P E FLIP TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT CIRCUIT T C 7 4 A C 1 75P/F/FN/FS DATA SILICON MONOLITHIC FLOP WITH CLEAR The TC74AC175 is an advanced high speed CMOS QUAD DTYPE FLIP FLOP fabricated with silicon gate and double layer metal wiring C2MOS technology.

Contextual Info: INTEGRATED T O SH IB A QUAD TECHNICAL D -T Y P E FLIP TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT CIRCUIT FLOP T C 7 4 A C T 1 75P/F/FN DATA SILICON MONOLITHIC WITH CLEAR The TC74ACT175 is an advanced high speed CMOS QUAD D-TYPE FLIP FLOP fabricated with silicon gate and double layer m etal wiring C2MOS technology.

Contextual Info: INTEGRATED TO SH IB A Q UAD TECHNICAL D -T Y P E FLIP TOSHIBA CM OS DIGITAL INTEGRATED CIRCUIT CIRCUIT FLOP T C 7 4 A C T 1 75P/F/FN DATA SILICON MONOLITHIC WITH CLEAR The TC74ACT175 is an advanced high speed CMOS QUAD D-TYPE FLIP FLOP fabricated with silicon gate and doublelayer metal wiring C2MOS technology.

MOS Controlled Thyristor

Abstract: "mos controlled thyristor" D 13 C M 14 100F1 TV-75
Contextual Info: MOS CONTROLLED THYRISTOR PRODUCT MATRIX T O -2 4 7 5 L E A D T O -2 4 7 M 0 -0 9 3 A A M C TV35P60F1D M C TV75P60E 1 M C TV75P100E1 M C TA 65P 100F1 M C TA 75P 60E 1 U N IT S V drm 600 600 600 1000 1000 600 V ' k 90 35t 35+ 75 65 65 75 A *KM 50 50 120 100

diode zener 27c

Abstract: 27c diode ZENER DIODE 27c
Contextual Info: BZD27C3V6P~BZD27C75P VOLTAGE REGULATOR DIODES POWER 3.6 to 75 Volts VOLTAGE 800 mW SOD-123FL Unit：inch mm • Low profile surface-mount package 0.115(2.90) 0.106(2.70) • Zener and surge current specification • Low leakage current 0.043(1.08) 0.038(0.98)

diode zener 27c

Abstract: 27c diode c5v1p 27C zener ZENER DIODE 27c diode 27c C18p zener 6v8p c6v8p c51p
Contextual Info: BZD27C3V6P~BZD27C75P VOLTAGE REGULATOR DIODES 800 mW POWER 3.6 to 75 Volts VOLTAGE FEATURES • Sillicon Planar Zener Diode • Low profile surface-mount package • Zener and surge current specification • Low leakage current • Excellent stability • High temperature soldering : 260 OC/10 sec. at terminals

Contextual Info: 2322593.4616 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage750 V(RMS) Max. Applied Voltage460 V(DC) Max. Applied Voltage615 I(TM) Max.(A) Peak Current1.2k V(C) Nom. (V) Clamping Voltage1.24k @I(PP) (A) (Test Condition)10 W(TM) Max.(J) Transient Energy63

diode zener 27c

Abstract: 27C zener zener 27c
Contextual Info: BZD27C3V6P~BZD27C75P VOLTAGE REGULATOR DIODES POWER 3.6 to 75 Volts VOLTAGE 800 mW SOD-123FL Unit：inch mm • Low profile surface-mount package 0.115(2.90) 0.106(2.70) • Zener and surge current specification • Low leakage current 0.043(1.08) 0.038(0.98)

diode zener 27c

Abstract: zener 27c
Contextual Info: BZD27C3V6P~BZD27C75P VOLTAGE REGULATOR DIODES 800 mW POWER 3.6 to 75 Volts VOLTAGE • Low profile surface-mount package 0.115 2.90 0.106(2.70) • Zener and surge current specification • Low leakage current 0.044(1.10) 0.031(0.80) • Sillicon Planar Zener Diode

SMD MARKING CODE 74P

Abstract: smd code marking LF sot23 smd codes a2 sot23 BAS70 A2 DIODE SMD CODE MARKING DIODE smd marking Ag marking code 10 sot23 smd code marking sot23 BAS70-04 BAS70-05
Contextual Info: • Philips Semiconductors - btsa^ai ANER N 0 0 2 M3 0 1 I bT B i A p y PHILIPS/] IS C R E T E b?E . Schottky barrier diodes FEATURES . Pr° dUCt specif,catlon BAS70 series QUICK REFERENCE DATA • Low leakage current SYMBOL

MFPZ12

Contextual Info: SMD Zener Diodes Two Terminals - 800mW 800mW Marking Code Part No. MFPZ3V6 MFPZ3V9 MFPZ4V3 MFPZ4V7 MFPZ5V1 MFPZ5V6 MFPZ6V0 MFPZ6V2 MFPZ6V8 MFPZ7V5 MFPZ8V2 MFPZ8V7 MFPZ9V9 MFPZ10 MFPZ11 MFPZ12 MFPZ13 MFPZ14 MFPZ15 MFPZ16 MFPZ17 MFPZ18 MFPZ19 MFPZ20 MFPZ22

Contextual Info: • P h ilip s S e m ico n d u cto rs ., 1^53^31 DQ24301 IbT APX P rodu ct sp e cifica tio n AUER PHILIPS/DISCRETE b?E D ^ — Schottky barrier diodes FE A T U R E S — BAS70 series Q U IC K R E F E R E N C E DATA • Low leakage current SYM BOL • Low turn-on and high breakdown

BAS70 73p

Contextual Info: Product specification Philips Semiconductors Schottky barrier diodes FEATURES BAS70 series Q U IC K R E F E R E N C E DATA PARAM ETER SYM BOL • Low leakage current • Low turn-on and high breakdown voltage • Ultra fast switching speed. D ESCRIPTIO N The BAS70 series are silicon