75P DIODE Search Results

PSMN005-75P

Abstract: 75p diode PSMN005-75B
Contextual Info: PSMN005-75P/75B N-channel enhancement mode field-effect transistor Rev. 01 — 26 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability: PSMN005-75P in SOT78 TO-220AB

03ad10

Abstract: PSMN008-75B PSMN008-75P
Contextual Info: PSMN008-75P; PSMN008-75B N-channel enhancement mode field-effect transistor Rev. 01 — 18 September 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

Contextual Info: PSMN008-75P; PSMN008-75B N-channel enhancement mode field-effect transistor Rev. 01 — 18 September 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability:

HZG469

Abstract: PSMN008-75B PSMN008-75P 75b diode 75p diode
Contextual Info: PSMN008-75P/75B TrenchMOS standard level FET Rev. 03 — 08 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package.

75P-140

Abstract: 2mbi 2MBI 75P-140
Contextual Info: 2-Pack IGBT 1400V 75A 2MBI 75P-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications • High Power Switching

2MBI 75P-140

Abstract: A1000T
Contextual Info: 2-Pack IGBT 1400V 75A 2MBI 75P-140 n Outline Drawing IGBT MODULE P-Series n Features • Square SC SOA at 10 x IC • Simplified Parallel Connection • Narrow Distribution of Characteristics • High Short Circuit Withstand-Capability n Applications • High Power Switching

PSMN008-75P

Abstract: 75p diode
Contextual Info: PSMN008-75P N-channel TrenchMOS SiliconMAX standard level FET Rev. 04 — 10 December 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for

PSMN005-75P

Contextual Info: PSMN005-75P N-channel TrenchMOS SiliconMAX standard level FET Rev. 01 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for

2mb175p-140

Abstract: 2MBI 75P-140 75P-140 1400V 2mb175 2mb175p Z125 2MBI75P-140 IGBT parallel ts125
Contextual Info: F U JI 2MBI 75P-140 IGBT MODULE P-Series n 2-Pack IGBT 1400V 75A Outline Drawing n Features • Square SC SO/A at 10 x l c • Simplified Parallel Connection • Narrow Distribution o f Characteristics • High Short Circuit Withstand-Capability n Applications

16PIN

Abstract: 74F175 SOL16 TC74ACT175
Contextual Info: INTEGRATED TOSHIBA QUAD TECHNICAL D -T Y P E FLIP TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT CIRCUIT FLOP TC74ACT1 75P/F/FN DATA SILICON MONOLITHIC WITH CLEAR The TC74ACT175 is an advanced high speed CMOS QUAD D-TYPE FLIP FLOP fabricated with silicon gate and double layer metal wiring C2MOS technology.

Contextual Info: INTEGRATED TOSHIBA Q U AD TECHNICAL D -T Y P E FLIP TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT CIRCUIT FLOP TC74AC1 75P/F/FN/FS DATA SILICON MONOLITHIC WITH CLEAR The TC74AC175 is an advanced high speed CMOS QUAD DTYPE FLIP FLOP fabricated with silicon gate and double layer metal wiring C2MOS technology.

74F175

Abstract: SOL16 SSOP16 TC74AC175
Contextual Info: INTEGRATED T O SH IB A QUAD TECHNICAL D -T Y P E FLIP TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT CIRCUIT T C 7 4 A C 1 75P/F/FN/FS DATA SILICON MONOLITHIC FLOP WITH CLEAR The TC74AC175 is an advanced high speed CMOS QUAD DTYPE FLIP FLOP fabricated with silicon gate and double layer metal wiring C2MOS technology.

Contextual Info: INTEGRATED T O SH IB A QUAD TECHNICAL D -T Y P E FLIP TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT CIRCUIT FLOP T C 7 4 A C T 1 75P/F/FN DATA SILICON MONOLITHIC WITH CLEAR The TC74ACT175 is an advanced high speed CMOS QUAD D-TYPE FLIP FLOP fabricated with silicon gate and double layer m etal wiring C2MOS technology.

Contextual Info: INTEGRATED TO SH IB A Q UAD TECHNICAL D -T Y P E FLIP TOSHIBA CM OS DIGITAL INTEGRATED CIRCUIT CIRCUIT FLOP T C 7 4 A C T 1 75P/F/FN DATA SILICON MONOLITHIC WITH CLEAR The TC74ACT175 is an advanced high speed CMOS QUAD D-TYPE FLIP FLOP fabricated with silicon gate and doublelayer metal wiring C2MOS technology.

MOS Controlled Thyristor

Abstract: "mos controlled thyristor" D 13 C M 14 100F1 TV-75
Contextual Info: MOS CONTROLLED THYRISTOR PRODUCT MATRIX T O -2 4 7 5 L E A D T O -2 4 7 M 0 -0 9 3 A A M C TV35P60F1D M C TV75P60E 1 M C TV75P100E1 M C TA 65P 100F1 M C TA 75P 60E 1 U N IT S V drm 600 600 600 1000 1000 600 V ' k 90 35t 35+ 75 65 65 75 A *KM 50 50 120 100

Contextual Info: CU3225K175G Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage270 V(RMS) Max. Applied Voltage175 V(DC) Max. Applied Voltage225 I(TM) Max.(A) Peak Current400 V(C) Nom. (V) Clamping Voltage455 @I(PP) (A) (Test Condition)5.0 W(TM) Max.(J) Transient Energy5.6

Contextual Info: 2322-593-84617 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage V(RMS) Max. Applied Voltage460 V(DC) Max. Applied Voltage615 I(TM) Max.(A) Peak Current1200 V(C) Nom. (V) Clamping Voltage1.24k @I(PP) (A) (Test Condition)10.0 W(TM) Max.(J) Transient Energy63.0

Contextual Info: 2322-593-34617 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage V(RMS) Max. Applied Voltage460 V(DC) Max. Applied Voltage615 I(TM) Max.(A) Peak Current1200 V(C) Nom. (V) Clamping Voltage1.24k @I(PP) (A) (Test Condition)10.0 W(TM) Max.(J) Transient Energy63.0

Contextual Info: 2322-593-04617 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage V(RMS) Max. Applied Voltage460 V(DC) Max. Applied Voltage615 I(TM) Max.(A) Peak Current1200 V(C) Nom. (V) Clamping Voltage1.24k @I(PP) (A) (Test Condition)10.0 W(TM) Max.(J) Transient Energy63.0

diode zener 27c

Abstract: 27c diode ZENER DIODE 27c
Contextual Info: BZD27C3V6P~BZD27C75P VOLTAGE REGULATOR DIODES POWER 3.6 to 75 Volts VOLTAGE 800 mW SOD-123FL Unit：inch mm • Low profile surface-mount package 0.115(2.90) 0.106(2.70) • Zener and surge current specification • Low leakage current 0.043(1.08) 0.038(0.98)

diode zener 27c

Abstract: 27c diode c5v1p 27C zener ZENER DIODE 27c diode 27c C18p zener 6v8p c6v8p c51p
Contextual Info: BZD27C3V6P~BZD27C75P VOLTAGE REGULATOR DIODES 800 mW POWER 3.6 to 75 Volts VOLTAGE FEATURES • Sillicon Planar Zener Diode • Low profile surface-mount package • Zener and surge current specification • Low leakage current • Excellent stability • High temperature soldering : 260 OC/10 sec. at terminals

diode zener 27c

Abstract: 27c diode
Contextual Info: BZD27C3V6P~BZD27C75P VOLTAGE REGULATOR DIODES 800 mW POWER 3.6 to 75 Volts VOLTAGE • Low profile surface-mount package 0.115 2.90 0.106(2.70) 0.044(1.10) 0.031(0.80) • Sillicon Planar Zener Diode 0.075(1.90) 0.067(1.70) FEATURES • Zener and surge current specification

diode zener 27c

Abstract: BZD27-C4V7P 27c diode 27C zener SOD-123FL c18p c51p zener BZD27-C5V1P C12PP diode 27c
Contextual Info: BZD27C3V6P~BZD27C75P VOLTAGE REGULATOR DIODES POWER 3.6 to 75 Volts VOLTAGE 800 mW SOD-123FL Unit：inch mm • Low profile surface-mount package 0.115(2.90) 0.106(2.70) • Zener and surge current specification • Low leakage current 0.043(1.08) 0.038(0.98)

Contextual Info: 2322593.4616 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage750 V(RMS) Max. Applied Voltage460 V(DC) Max. Applied Voltage615 I(TM) Max.(A) Peak Current1.2k V(C) Nom. (V) Clamping Voltage1.24k @I(PP) (A) (Test Condition)10 W(TM) Max.(J) Transient Energy63