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IXYS Corporation


IXYS Corporation IXFH74N20P MOSFETs 74 Amps 200V 0.034 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXFH74N20P		12			1 $7.88 10 $4.15 100 $4.15 1000 $4.06 10000 $4.06	Buy Now
TTI	IXFH74N20P	Tube	300		30	1 - 10 - 100 $4.15 1000 $3.91 10000 $3.91	Buy Now
IXYS Corporation IXTQ74N20P MOSFETs 74 Amps 200V 0.034 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTQ74N20P					1 - 10 - 100 - 1000 $3.64 10000 $3.64	Get Quote
TTI	IXTQ74N20P	Tube			300	1 - 10 - 100 - 1000 $3.57 10000 $3.57	Buy Now
IXYS Corporation IXTT74N20P MOSFETs 74 Amps 200V 0.034 Rds
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	IXTT74N20P					1 - 10 - 100 - 1000 $5.28 10000 $5.28	Get Quote
TTI	IXTT74N20P	Tube			300	1 - 10 - 100 - 1000 $5.15 10000 $5.15	Buy Now

74N20P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFC 74N20P VDSS ID25 RDS on Electrically Isolated Tab N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated trr = = = ≤ 200 35 36 200 V A Ω mΩ ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings	Original	74N20P	PDF
74n20 Abstract: 36gd Contextual Info: PolarHTTM HiPerFET IXFC 74N20P Power MOSFET ISOPLUS220TM VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = = = ≤ 200 35 36 200 V A Ω mΩ ns N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated Symbol Test Conditions Maximum Ratings	Original	74N20P ISOPLUS220TM 6-15-05-D 74n20 36gd	PDF
74N20P Contextual Info: IXTQ 74N20P IXTT 74N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 74 A ≤ 34 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 200 V V VGSS VGSM Continuous	Original	74N20P O-268 74N20P	PDF
74N20P Contextual Info: IXTQ 74N20P IXTT 74N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 74 A Ω ≤ 34 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 200 200 V V VGSS VGSM Continuous	Original	74N20P O-268 74N20P	PDF
Contextual Info: VDSS ID25 PolarHTTM HiPerFET IXFC 74N20P Power MOSFET ISOPLUS220TM RDS on trr (Electrically Isolated Back Surface) = = = ≤ 200 35 36 200 V A Ω mΩ ns N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated Symbol Test Conditions Maximum Ratings	Original	74N20P ISOPLUS220TM 6-15-05-D	PDF
Contextual Info: IXTQ 74N20P IXTT 74N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 74 A Ω = 34 mΩ RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 200 200 V V VGS VGSM Continuous	Original	74N20P 74N20P O-268	PDF
74n20 Abstract: PLUS220SMD Contextual Info: PolarHTTM HiPerFET Power MOSFET IXFH 74N20P IXFV 74N20P IXFV 74N20PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated = = = ≤ 200 74 34 200 V A Ω mΩ ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings	Original	74N20P 74N20PS 74N20P 74n20 PLUS220SMD	PDF
Contextual Info: IXTQ 74N20P IXTT 74N20P PolarHTTM Power MOSFET VDSS ID25 = 200 V = 74 A Ω = 34 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM ID25	Original	74N20P O-268	PDF
74N20P Abstract: PLUS220SMD Contextual Info: PolarHTTM HiPerFET IXFH 74N20P IXFV 74N20P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated trr IXFV 74N20PS RDS on Symbol Test Conditions VDSS TJ = 25° C to 175° C 200 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 200	Original	74N20P 74N20PS 74N20P PLUS220SMD	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original		PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p	PDF
DIODE 1334 Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88 Contextual Info: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205	Original	110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP	PDF