74958 Search Results
74958 Price and Stock
Phoenix Contact 1749586TERM BLOCK HDR 16POS 3.81MM |
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Weidmüller Interface GmbH & Co. KG 1749580000CONN TERM BLK END PLATE RAIL BG |
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Wiha Quality Tools 7495832PC SECURITY BIT GO BOX |
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Weidmüller Interface GmbH & Co. KG 2749580000SDI SET SLIM S3.5-6.5/PH1/2 |
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Phoenix Contact 2749589MARKER LABELS PRINTED HORIZON |
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74958 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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8467 transistorContextual Info: SPICE PARAMETER EM6M1 * MEM6M1_N NMOSFET model * Date: 2006/09/07 .MODEL MEM6M1_N NMOS + LEVEL=3 + L=2.0000E-6 + W=.27 + KP=1.0298E-6 + RS=.8 + RD=.36503 + VTO=1.4405 + RDS=2.8571E9 + TOX=2.0000E-6 + CGSO=37.037E-15 + CGDO=35.457E-12 + CBD=18.868E-12 + MJ=.74958 |
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0000E-6 0298E-6 8571E9 037E-15 457E-12 868E-12 9831E3 79E-18 8467 transistor | |
Contextual Info: Si3879DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY 0.070 at VGS = - 5.0 V ID (A)a - 5.0 0.105 at VGS = - 2.5 V - 4.2 VDS (V) - 20 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Schottky Power MOSFET |
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Si3879DV 2002/95/EC Si3879DV-T1-E3 Si3879DV-T1l 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
217 diode
Abstract: si3879
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Si3879DV 2002/95/EC Si3879DV-T1-E3 Si3879DV-T1trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 217 diode si3879 | |
4405Contextual Info: SPICE PARAMETER EMF9 * QEMF9 NPN BJT model * Date: 2006/11/30 .MODEL QEMF9 NPN + IS=130.00E-15 + BF=394.21 + VAF=31.700 + IKF=2.0336 + ISE=130.00E-15 + NE=1.7644 + BR=166.53 + VAR=100 + IKR=16.665 + ISC=977.07E-15 + NC=1.4276 + NK=.73285 + RE=.13 + RB=5.8745 |
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00E-15 07E-15 128E-12 019E-12 44E-12 3199E-9 0000E-6 0298E-6 8571E9 4405 | |
4405
Abstract: UM5K1N NMOS 74958
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0000E-6 0298E-6 8571E9 037E-15 457E-12 868E-12 9831E3 79E-18 4405 UM5K1N NMOS 74958 | |
EMF32Contextual Info: SPICE PARAMETER EMF32 * EMF32_DT PNP DT model * Date: 2007/01/09 * BJT with a resistor *C B E .SUBCKT EMF32_DT 1 2 3 R1 2 Base Rb 4.7k Q1 1 Base 3 QDTA1 .MODEL Rb RES + R=1 .MODEL QDTA1 PNP + IS=20.000E-15 + BF=187.64 + VAF=10 + IKF=.21074 |
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EMF32 000E-15 145E-12 937E-12 613E-12 00E-12 00E-9 MEMF32 EMF32 | |
4405
Abstract: UM6K1N nmos transistor 74958 NMOS
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0000E-6 0298E-6 8571E9 037E-15 457E-12 868E-12 9831E3 79E-18 4405 UM6K1N nmos transistor 74958 NMOS | |
2SK3019
Abstract: 4405 2SK301
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2SK3019 M2SK3019 0000E-6 0298E-6 8571E9 037E-15 457E-12 868E-12 2SK3019 4405 2SK301 | |
SICAL CO 41
Abstract: ifrs 730
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OCR Scan |
18x30 18x40 14x30 16x30 A749581 A749582 A749580 25x75 SICAL CO 41 ifrs 730 | |
FZK101
Abstract: FZK105 upd101 SNF10 SN76131 TAA700 FZH111 FZJ101 MFC8010 MFC8001
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OCR Scan |
Grou19 CN127-128-638 ZN220-320. CN131-132-642. ZN221-321. CN133-134-644. ZN248-348. CN135-136-646 ZN222-322. CN121-122-682. FZK101 FZK105 upd101 SNF10 SN76131 TAA700 FZH111 FZJ101 MFC8010 MFC8001 | |
ISC202Contextual Info: SPICE PARAMETER EMF6 * QEMF6 PNP BJT model * Date: 2006/11/30 .MODEL QEMF6 PNP + IS=110.00E-15 + BF=394.09 + VAF=21.739 + IKF=.52024 + ISE=110.00E-15 + NE=1.6818 + BR=28.439 + VAR=100 + IKR=1.3710 + ISC=2.0285E-12 + NC=2.1543 + NK=.56117 + RE=.1 + RB=4.9687 |
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00E-15 0285E-12 776E-12 9662E-12 39E-12 676E-9 0000E-6 0298E-6 8571E9 ISC202 | |
4405
Abstract: nmos transistor NE-17
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00E-15 07E-15 128E-12 019E-12 44E-12 3199E-9 0000E-6 0298E-6 8571E9 4405 nmos transistor NE-17 | |
4405
Abstract: 2SK3018 8467 transistor 2SK301 74958 NMOS nmos transistor 7495 M2SK3018
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2SK3018 M2SK3018 0000E-6 0298E-6 8571E9 037E-15 457E-12 868E-12 4405 2SK3018 8467 transistor 2SK301 74958 NMOS nmos transistor 7495 | |
Si3879DV-T1-E3
Abstract: Si3879DV-T1-GE3 SI3879DV si3879 74958
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Si3879DV 2002/95/EC 18-Jul-08 Si3879DV-T1-E3 Si3879DV-T1-GE3 si3879 74958 | |
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Contextual Info: Si3879DV Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY 0.070 at VGS = - 5.0 V ID (A)a - 5.0 0.105 at VGS = - 2.5 V - 4.2 VDS (V) - 20 RDS(on) (Ω) • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT Plus Schottky Power MOSFET |
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Si3879DV 2002/95/EC Si3879DV-T1-E3 Si3879DV-T1hay 11-Mar-11 | |
EMF33Contextual Info: SPICE PARAMETER EMF33 * EMF33_DT PNP DT model * Date: 2007/01/15 * BJT with resistors *C B E .SUBCKT EMF33_DT 1 2 3 R1 2 Base Rb 1k R2 Base 3 Re 10k Q1 1 Base 3 QDTB5 .MODEL Rb RES + R=1 .MODEL Re RES + R=1 .MODEL QDTB5 PNP + IS=110.00E-15 |
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EMF33 00E-15 24E-15 776E-12 9662E-12 00E-12 0000E-9 MEMF33 EMF33 | |
RS Components
Abstract: nmos transistor nmos transistors EM6K1
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0000E-6 0298E-6 8571E9 037E-15 457E-12 868E-12 9831E3 79E-18 RS Components nmos transistor nmos transistors EM6K1 | |
Contextual Info: SPICE PARAMETER UMF6N * QUMF6N PNP BJT model * Date: 2006/11/30 .MODEL QUMF6N PNP + IS=110.00E-15 + BF=394.09 + VAF=21.739 + IKF=.52024 + ISE=110.00E-15 + NE=1.6818 + BR=28.439 + VAR=100 + IKR=1.3710 + ISC=2.0285E-12 + NC=2.1543 + NK=.56117 + RE=.1 + RB=4.9687 |
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00E-15 0285E-12 776E-12 9662E-12 39E-12 676E-9 0000E-6 0298E-6 8571E9 | |
4405
Abstract: 2SK3541 2SK354 74958 8467 transistor rb transistor M2SK nmos transistor M2SK3541
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2SK3541 M2SK3541 0000E-6 0298E-6 8571E9 037E-15 457E-12 868E-12 4405 2SK3541 2SK354 74958 8467 transistor rb transistor M2SK nmos transistor | |
S-71290
Abstract: Si3879DV-T1-E3 SI3879DV
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Original |
Si3879DV Si3879DV-T1-E3 18-Jul-08 S-71290 | |
UMF32N
Abstract: DSA0069052
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Original |
UMF32N UMF32N 000E-15 145E-12 937E-12 613E-12 00E-12 00E-9 DSA0069052 |