2SK3018 Search Results

Contextual Info: MOSFET SMD Type Product specification 2SK3018 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 0.4 3 1 ● Fast switching speed. 0.55 Drain 2 +0.1 0.95-0.1 +0.1 1.9-0.1 ● Drive circuits can be simple.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET SOT-23 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits

SPHE8202

Abstract: SPHE8202S 2SB1132R 1N4148 SMT BFR68 BC30 BC26 sphe8 ELCO-CON24 3904 smt
Contextual Info: Saalfeld & Freitas / Curitiba + D4 1N4148 SMT CDLDO 100 BC25 jan/2006 RFGND 1000PF GND 0.1UF BC26 0.01UF 0.1UF 0.1UF BC22 0.1UF C43 0.1UF BC21 BC24 3904 Q12 + DVD_VR CD_VR 0.1UF 0.1UF BC28 0.1UF BC29 RFGND RFGND Q9 2SK3018 2 R52 R45 2 Q7 2SK3018 100K 100K

2SK3018

Abstract: UM5K1N
Contextual Info: UM5K1N Transistors 2.5V Drive Nch+Nch MOS FET UM5K1N zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET UMT5 2.0 1.3 zFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance.

UM5K1N

Abstract: 2SK3018 two transistor forward
Contextual Info: Transistor Small switching 30V, 0.1A UM5K1N FFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (2.5V) makes this device ideal for portable equipment. 5) Easily designed drive circuits.

mosfet equivalent

Abstract: 2SK3018 T106 2SK3018 sc70
Contextual Info: 2SK3018 Transistor Small switching 30V, 0.1A 2SK3018 zExternal dimensions (Unit : mm) zApplications Interfacing, switching (30V, 100mA) 2.0±0.2 0.9±0.1 1.3±0.1 (2) (2) (3) (3) 0.7±0.1 0 to 0.1 0.3+0.1 0.15±0.05 −0 All terminals have same dimensions

Contextual Info: Data Sheet 2.5V Drive Nch MOSFET 2SK3018UB  Structure Silicon N-channel MOSFET  Dimensions Unit : mm UMT3F 2.0 0.9 0.53 (1) 0.53 0.425 2.1 Features 1) Low on-resistance. 2) Low voltage drive(2.5V drive). (3) 1.25 0.425 0.32 (2) 0.65 0.65 1.3 0.13

4405

Abstract: 2SK3018 8467 transistor 2SK301 74958 NMOS nmos transistor 7495 M2SK3018
Contextual Info: SPICE PARAMETER 2SK3018 by ROHM TR Div. * 2SK3018 NMOS model * Date: 2006/09/07 .MODEL 2SK3018 NMOS + LEVEL=3 + L=2.0000E-6 + W=.27 + KP=1.0298E-6 + RS=.8 + RD=.36503 + VTO=1.4405 + RDS=2.8571E9 + TOX=2.0000E-6 + CGSO=37.037E-15 + CGDO=35.457E-12 + CBD=18.868E-12

Contextual Info: UM6K1N Transistors 2.5V Drive Nch+Nch MOS FET UM6K1N zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm UMT6 2.0 0.9 1.3 0.65 0.65 0.7 (5) (4) (6) 1.25 2.1 1pin mark (3) (1) (2) 0.2 0.1Min. zFeatures 1) Two 2SK3018 transistors in a single UMT package.

02M45

Contextual Info: UM5K1N Transistors 2.5V Drive Nch+Nch MOS FET UM5K1N zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET UMT5 2.0 1.3 zFeatures 1) Two 2SK3018 transistors in a single UMT package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance.

2SK3018

Contextual Info: 2SK3018W N-Channel POWER MOSFET 3 DRAIN P b Lead Pb -Free 3 1 2 1 GATE Description: *Gate Protection Diode * Low on-resistance. * Fast switching speed. * Low voltage drive (2.5V) makes this device ideal for portable equipment. * Easily designed drive circuits.

2SK3018

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SK3018 Features • • • • • • • • • • • • Low ON-Resistance Low Input Capacitance Low Voltage drive makes this device idipmenteal for portable equipment

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET SOT-323 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits

Contextual Info: WILLAS FM120-M+ 2SK3018WT1 THRU FM1200-M+ SOT-323 Plastic-Encapsulate MOSFETS 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse

2.5V "Power MOSFET"

Abstract: MOSFET IGSS 100A n-channel mosfet SOT-23 2SK3018 2SK3018 SOT-23
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ 3 DESCRIPTION SOT-23 The UTC 2SK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is

transistor 171

Abstract: 2SK3018 transistor DSA0018935
Contextual Info: Transistor Small switching 30V, 0.1A 2SK3018 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. FExternal dimensions (Units: mm)

2SK3018 SOT-23

Abstract: 5V GATE TO SOURCE VOLTAGE MOSFET MOSFET IGSS 100uA 2sk3018 package mosfet vgs 5v n-channel mosfet vgs 3v
Contextual Info: 2SK3018 N-Channel Enhancement Mode MOSFET • Features • External dimensions 1 Low on-resistance. 2) Fast switching speed. 3) Low voltage drive 2.5V) makes this ③ device ideal for portable equipment. ② 4) Easily designed drive circuits. ① 5) Easy to parallel.

2SK3018

Abstract: 3018G 2SK3018 UTC
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UK3018 Preliminary Power MOSFET 2.5V DRIVE SILICON N-CHANNEL MOSFET „ DESCRIPTION The UTC 2SK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is

Contextual Info: 2SK3018 Transistor 2.5V Drive Nch MOS FET 2SK3018 zExternal dimensions Unit : mm zStructure Silicon N-channel MOSFET UMT3 2.0 0.9 0.2 0.3 0.7 1.25 (1) (2) 0.1Min. zApplications Interfacing, switching (30V, 100mA) 2.1 (3) 0.65 0.65 1.3 zFeatures 1) Low on-resistance.

2SK3018

Contextual Info: UM6K1N Transistors 2.5V Drive Nch+Nch MOS FET UM6K1N zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm UMT6 2.0 0.9 1.3 0.65 0.65 0.7 (5) (4) (6) 1.25 2.1 1pin mark (3) (1) (2) 0.2 0.15 0.1Min. zFeatures 1) Two 2SK3018 transistors in a single UMT package.

2SK3018 SOT-23

Abstract: equivalent smd mosfet 2SK3018 n-channel mosfet SOT-23 smd mosfet POWER MOSFET Rise Time 1 ns mosfet Rise time 2 ns 100 V
Contextual Info: MOSFET SMD Type N-Channel MOSFET 2SK3018 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Low on-resistance. +0.1 1.3-0.1 +0.1 2.4-0.1 • Features 0.4 3 1 ● Fast switching speed. 0.55 Drain 2 +0.1 0.95-0.1 +0.1 1.9-0.1 ● Drive circuits can be simple. +0.1

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET SOT-323 FEATURES z Low on-resistance z Fast switching speed z Low voltage drive makes this device ideal for portable equipment z Easily designed drive circuits

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS UM6K1N SOT-363 Dual N-channel MOSFET FEATURES 1 Two 2SK3018 transistors in a package. 2) The MOS FET elements are independent, eliminating mutual interference. 3) Mounting cost and area can be cut in half.

Contextual Info: UM6K1N Transistors 2.5V Drive Nch+Nch MOS FET UM6K1N zStructure Silicon N-channel MOS FET zExternal dimensions Unit : mm UMT6 2.0 0.9 1.3 0.65 0.65 0.7 (5) (4) (6) 1.25 2.1 1pin mark (3) (1) (2) 0.2 0.1Min. zFeatures 1) Two 2SK3018 transistors in a single UMT package.