749 PIN CONFIGURATION Search Results

Signal Path Designer

Abstract: altera ep910i
Contextual Info: Classic EPLD Family M ay 1999 ver. ;> Features D ata S h e e t • ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete device family with logic densities of 300 to 900 usable gates see Table 1 Device erasure and reprogramming with non-volatile EPROM configuration elements

749 MOSFET TRANSISTOR motorola

Abstract: MAX749CPA
Contextual Info: 19-0143; Rev 0; 5/93 V M ^ X I V M D igitally A djustable LCD Bias Supply _ G eneral Description The MAX749 generates negative LCD-bias contrast voltages from 2V to 6V inputs. Full-scale output voltage can be scaled to -100V or greater, and is d ig ita lly

MARKING CODE Zi sot363

Abstract: WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS
Contextual Info: SIEMENS BCR 198S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit •Two galvanic internal isolated Transistors in one package ■Built in bias resistor (R1=47k£i, R2=47kQ) Type Marking Ordering Code Pin Configuration

749 MOSFET TRANSISTOR motorola

Abstract: 749PC GE DC 300 ADJUSTABLE SPEED DRIVE 4151d MAX749CA MAX749EA zetex 749 MAX749CPA
Contextual Info: 19-0143; Rev 0; 5/93 V M y JX IV M D igitally A djustable LCD Bias Supply _ G eneral D escription .F eatures The MAX749 generates negative LCD-bias contrast voltages from 2V to 6V inputs. Full-scale output voltage can be scaled to -100V or greater, and is d ig ita lly

749 MOSFET TRANSISTOR motorola

Abstract: MAX749CPA
Contextual Info: 19-0143; Rev 1; 2/95 D igitally Adjustable LCD Bias Supply A unique current-limited control scheme reduces supply current and maximizes efficiency, while a high switching frequency up to 500kHz minimizes the size of external components. Quiescent current is only 60|jA max and is

embedded system mini projects using 8051 free

Abstract: agriculture based electronics projects DB25 LPT 8086 microprocessor mini project circuit ic 8051 MEMORY CARD 128 KB BROSE mini projects using bread board and integrated MCU 80C535 BOSCH 7.4.9 MM486
Contextual Info: C o v e r i n g t h e E n t i r e S p e c t r u m o f E m b e d d e d C o n t r o l Trusted C167/ST10 Embedded Architecture now in phyCORE SBC ® design C o v e r i n g t h e E n t i r e S p e c t r u m phyCORE®-167CR/CS E m b e d d e d C o n t r o l Product Catalogue 2001

Signal Path Designer

Contextual Info: Classic EPLD Family M ay 1999, ver. 5 Features Data Sheet • ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete device family w ith logic densities of 300 to 900 usable gates see Table 1 Device erasure and reprogram m ing w ith non-volatile EPROM configuration elements

Contextual Info: FLL1200IU-2A L-Band Medium & High Power GaAs FETs f u j Ît s u FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2000 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2A is a 120 Watt GaAs FET that employs a push-pull design that

CS03

Abstract: CS032
Contextual Info: SAW Bandpass Filter 202155B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2512 Pin Configuration

D2012

Contextual Info: SAW Bandpass Filter 201518B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration

7473 pin diagram

Abstract: pin diagram of 7473 RF Prime X band attenuator cpi twt india cpi CPI VZU 6900K6 6900K4 VZU-6991K4
Contextual Info: 6900K4 Series 20 Watt Power Amplifier Features Description • • • • 4.0 TO 18 GHz Octave Bandwidths or Greater Optional GPIB Control One Year Warranty Unlimited Hours • Worldwide Support Centers • 24 Hour Hotline for customer support (800) 231-4818 or 1-650-846-3700

S1365

Contextual Info: Bandpass Filter 222053B 1. Features IF bandpass filter Low-Loss Filter Single-ended operation Ceramic Surface Mount Device SMD Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device (ESD) 2. Package Dimension 13.30±0.2

FLL1500IU-2C

Abstract: eudyna GaAs FET Amplifier
Contextual Info: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that

FLL1500IU-2C

Contextual Info: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that

uPC3423

Contextual Info: SEC //P C 3 42 3 OVERVOLTAGE “ CROWBAR” SENSING CIRCUIT NEC Electronics Inc. Description Pin Configuration The /UPC3423 is an ove rvo lta g e p ro te c tio n c irc u it OVP th a t p ro te cts sensitive e le ctro n ic c irc u itry from ove rvo lta g e tran sie n ts o r re g u la to r fa ilu re s when used

479 SOCKET PINOUT

Abstract: 476 10k 615 EP610 ORDERING apex complex 478 SOCKET PINOUT ep20k200 PINOUT ALTERA+MAX+5000+programming
Contextual Info: Index 16 Numerics 2.5-V device support APEX 20K devices 71 FLEX 10K devices 128,138,273 FLEX 6000 devices 446 MAX® 7000 devices 616 MAX 3000A devices 683 3.3-V device support configuration devices 810 FLEX 10K devices 128,133,138,273 FLEX 8000 devices 376

Contextual Info: HB52RF649E1U-75B Description L EO 512 MB Registered SDRAM DIMM 64-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 64 M × 4 Components PC133 SDRAM E0023H10 (1st edition) (Previous ADE-203-1193A (Z) Preliminary Jan. 31, 2001 uc od Pr The HB52RF649E1U belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been

512m pc133 SDRAM DIMM

Abstract: nec 2405 PC133 registered reference design
Contextual Info: HB52F649E1-75B 512 MB Registered SDRAM DIMM 64-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 64 M × 4 Components PC133SDRAM E0021H20 (Ver. 2.0) Aug. 20, 2001 (K) Description The HB52F649E1 belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed

emi rfi filter

Abstract: RFI filter cost RC Filter MSD001 in line t filter on board (DC) RFI suppression filters philips Film EMI filter foto transistor philips 035
Contextual Info: PHILIPS COMPONENTS Application Note Integrated RC filters for EMI/RFI suppression rden Foto’s wo eleverd nog aang rden Foto’s wo eleverd nog aang Integrated RC filters for EMI/RFI suppression SUMMARY Philips offers a variety of integrated passive RC filters in thin film-on-silicon technology in both TFilter and Half-T Filter configurations. T-type

UC 3842

Contextual Info: UC1714/5 UC2714/5 UC3714/5 m m U IM IT R O O E Complementary Switch FET Drivers FEATURES DESCRIPTION • These two families of high speed drivers are designed to provide drive waveforms for complementary switches. Com­ plementary switch configurations are commonly used in syn­

512m pc133 SDRAM DIMM

Abstract: PC133 registered reference design Hitachi DSA00174 pc133 SDRAM DIMM package Nippon capacitors
Contextual Info: HB52RF649E1U-75B 512 MB Registered SDRAM DIMM 64-Mword x 72-bit, 133 MHz Memory Bus, 1-Bank Module 18 pcs of 64 M × 4 Components PC133 SDRAM ADE-203-1193A (Z) Preliminary Rev. 0.1 Oct. 6, 2000 Description The HB52RF649E1U belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been

Contextual Info: r n 8 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. COPYRIGHT - BY TYCO ELECTRONICS CORPORATION. a ll R iG h TS ftESCftvCO. LOC DIST DF AO REVISIONS A 2. A D D E S C R IP T IO N TTR- RELEASED T5STT TSST -7FÜS- 1 -0 1 CT CB SEE SHEET 2 FOR RECOMMENDED P.C. BOARD LAYOUT. TRUE POSITION

Contextual Info: r n 8 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. COPYRIGHT - BY TYCO ELECTRONICS CORPORATION. a ll R iG h TS ftESCftvCO. LOC DIST DF AO REVISIONS A 2. A D D E S C R IP TIO N TTR- RELEASED T5STT TSST -7FÜS- 1 -0 1 CT CB SEE SHEET 2 FOR RECOMMENDED P.C. BOARD LAYOUT. TRUE POSITION

2M08B

Contextual Info: MITSUBISHI LS iS <SRAM MODULE M H 2 M 0 8 B T N A -8 5 L - 1 0 L ,-1 2 L / M H 2 M 0 8 B T N A -8 5 H ,-1 0 H ,-1 2 H pa 16777216-BIT 2097152-WORD BY 8-BIT) CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) [Both side, 2-layer] The M H 2M 08B TN A is a 16777216-bits CMOS static RAM