mt5089
Abstract: IN3035
Contextual Info: □3 PLESSEY SEMICOND/DISCRETE DE 72E0533 / -£ > < ? -/7 FM M T5088 FM M T5089 NPN silicon planar small signal transistors A B S O L U T E M A X I M U M R A T IN G S Param eter Sym bol FM M T5088 FM M T5089 C o lle c to r V o lta g e V C BO 35 30 C o lle cto r-E m itte r V o lta g e
|
OCR Scan
|
72e0533t5088t5089mt5089+1in3035
|
PDF
|
scr 219
Abstract: ZVN3210L PLESSEY SP
Contextual Info: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY ~T5 dF | 7 S S 0 5 3 3 SEMICOND/ D ISCRETE N-channel enhancement mode vertical DMOS FET 95D 0DDS711 0 | ~ 0 5 7 1 1 ZVN3210 FEATURES • C o m p a c t ge om etry • F a s t s w itc h in g sp e ed s • N o se c o n d a ry b re a k d o w n
|
OCR Scan
|
0dds711zvn3210zvn3210l0s715+6qdds71bt-39-11g-21872e0533scr 219plessey sp
|
PDF
|
G-329
Abstract: ZVP3306 ZVP3306A
Contextual Info: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/DISCRETE ZVP2220 DE I 75EDS33 ODOSflEE 1 9SD 05822 T '3 7 \ 2 5 G-324 PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/DISCRETE G-325 d F | 7S2[]S33 QOaSflES □ |~~ 95D 05 823 D PLESSEY SEMICOND/DISCRETE
|
OCR Scan
|
75eds33zvp2220g-324g-325+77ee0533g-3267220s33-r-31-25zvp3306g-329zvp3306a
|
PDF
|
ZVP0120L
Abstract: ZVP P-channel
Contextual Info: PLESSEY s e n i c o n d / d i s c r e t e TS 7220533 P L E S S EY S E M I C O N D /D ISCRETE D F § ? a E D S 3 3 0 0 0 S 7 4 CJ 3 95D 0 5 7 4 9 D T - J7-zr P-channel enhancement mode vertical DMOS FET ZVP0120 FEATURES • Compact geometry • Fast sw itching speeds
|
OCR Scan
|
000s74czvp0120d00s7s30d05754+5g-256g-257g-258zvp0120lzvp p-channel
|
PDF
|
ZVP2120
Abstract: plessey ZVP P-channel
Contextual Info: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY 7s SEMICOND/DISCRETE ZVP2120 FEATURES Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance • Low current drive • Ease of paralleling
|
OCR Scan
|
zvp2120zvp2120azvp2120bzvp2120l+6-20cond/discreteg-298g-29972a0533plesseyzvp p-channel
|
PDF
|
plessey
Abstract: BS107P
Contextual Info: TS PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY SEMICOND/DISCRETE DE~| 72ED533 GODSSDl D 95D 05501 D T - J S’~ 1 5* N-channel enhancement mode vertical DMOS FET BS107P FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability
|
OCR Scan
|
72ed533bs107pon20533550s33+400dssq572sg5337eeg533plessey
|
PDF
|
BSS70R
Abstract: BSS69 bss69r
Contextual Info: 7:p l e s s e y 03 s e m i c o n d /d i s c r e t e PIMP silicon planar medium power switching transistors A B SO LU T E M AXIM UM RATIN G S Parameter BSS69 BSS70 Symbol Collector-Base Voltage BSS69 & BSS70 VCBO VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage
|
OCR Scan
|
7220s33bss69bss70000tt+3-----------------------------------bss69bss70rbss69r
|
PDF
|