720 SOT 23 Search Results

9434

Abstract: TO-131 Package R177 LT1103 72483
Contextual Info: RELIABILITY DATA LT1103 / 1105 / 1106 / 1107 / 1108 / 1109 / 1110 / 1111 8/21/2006 • OPERATING LIFE TEST PACKAGE TYPE SAMPLE SIZE OLDEST DATE CODE FLATPAK/LCC SIDEBRAZE PLASTIC DIP SSOP/TSSOP TO-92 NEWEST DATE CODE 50 9320 44 9213 306 9130 306 9326 201 9501

9434

Abstract: 9625 9624 LT1103 R177
Contextual Info: RELIABILITY DATA LT1103 / 1105 / 1106 / 1107 / 1108 / 1109 / 1110 / 1111 12/8/2000 • OPERATING LIFE TEST PACKAGE TYPE SAMPLE SIZE OLDEST DATE CODE FLATPAK/LCC SIDEBRAZE PLASTIC DIP SSOP/TSSOP TO-92 50 9320 44 9213 306 9130 306 9326 201 9501 907 • HIGHLY ACCELERATED STRESS TEST AT +131°C/85%RH

BFY88

Abstract: Telefunken u 237 transistor marking code 2C BFY 88 telefunken C80 ui77 silicon npn planar rf transistor sot 143 IMB 06 C BFY 52 transistor 95288
Contextual Info: TELEFUNKEN ELECTRONIC m ilp y M IM electronic Ö1C D • fi^SOQRb 0005332 b 'T- BFY 88 Creative Technologies Silicon NPN Epitaxial Planar RF Transistor Applications: VHF amplifier stages, pre-stages In common emitter configuration Oscillating mixer stages in common base configuration

Contextual Info: Product specification NTR4171P Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23 −30 V Features • • • • V BR DSS Low RDS(on) at Low Gate Voltage Low Threshold Voltage High Power and Current Handling Capability This is a Pb−Free Device

Contextual Info: NTZS3151P Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage Small Footprint 1.6 x 1.6 mm This is a Pb−Free Device http://onsemi.com V(BR)DSS Applications RDS(on) TYP

BSY44

Abstract: 2SC634A SA2720 2n3404 2SC503 2S0220 2SC109A 2N2193 LOW-POWER SILICON NPN 2SC486
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 2N2389 BFY34 SA2710 2SC734 2SC2000M MPS6591 2N2253 2N2253 Sl100 501613 2SC109A 2S0220 A5T2193 2N2351 2N2351A 2N5262 MPS9434 UPI956 HSE146 2SC216

diode S6 78A

Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
Contextual Info: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14

2N3906 Darlington transistor

Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

BC327 BC337 noise figure

Abstract: BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212
Contextual Info: CHAPTER 1 Selector Guide http://onsemi.com 5 http://onsemi.com 6 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11

MAX3232CSE

Abstract: LM317T 16D-9 P10 led 1N4004 LM317 Basso TLE6259-2G P05-P07 for lm317
Contextual Info: 1 2 3 4 VCC 1 2 R10 10K C14 INT11 PE1 INT10 1 4 2 3 C6 0.1uf 4 2 3 Vcc R2in X2 U5 2 6 C18 0.1uf 1 6 2 7 3 8 4 9 5 14 7 13 8 MAX3232CSE UART SIN 1 2 3 4 Default:3-4 D13 VCC R12 C13 1K 1N4148 UART 0.1uf Default Open JP5 LIN Enable VCC 2 1 4 EN RXD TXD R11 22K

NTZS3151PT1G

Abstract: NTZS3151PT5G NTZS3151P
Contextual Info: NTZS3151P Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage Small Footprint 1.6 x 1.6 mm This is a Pb−Free Device http://onsemi.com V(BR)DSS Applications RDS(on) TYP

a950

Contextual Info: NTZS3151P Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage Small Footprint 1.6 x 1.6 mm These are Pb−Free Devices http://onsemi.com V(BR)DSS RDS(on) Typ −20 V

ON v sot-563

Abstract: v sot-563 MOSFET NTZS3151P NTZS3151PT1G NTZS3151PT5G
Contextual Info: NTZS3151P Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage Small Footprint 1.6 x 1.6 mm This is a Pb−Free Device http://onsemi.com V(BR)DSS Applications RDS(on) TYP

022 463a

Abstract: SOT563-6
Contextual Info: NTZS3151P Small Signal MOSFET −20 V, −950 mA, P−Channel SOT−563 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage Small Footprint 1.6 x 1.6 mm These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

712 transistor smd sot23

Abstract: 33m ph diode smd transistor 718 diode PH 33m
Contextual Info: Value Code Inductor ph Code .01 .012 .015 .018 000 Oil 001 009 ph Code pFID. .10 .12 .15 .18 010 012 015 018 _ _ . _ .022 002 .22 022 _ _ - _ .027 007 .27 027 - _ .033 003 .33 033 _ - - - .039 009 .39 039 . _ _ - _ .047 004 .47 047 _ _ - _ .056 005 .56 056

NTR4171PT1G

Abstract: NTR4171PT3G TRF marking sot23
Contextual Info: NTR4171P Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23 Features • • • • Low RDS on at Low Gate Voltage Low Threshold Voltage High Power and Current Handling Capability This is a Pb−Free Device http://onsemi.com V(BR)DSS Applications

NTR4171PT1G

Abstract: NTR4171PT3G TRF marking sot23
Contextual Info: NTR4171P Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23 Features • • • • Low RDS on at Low Gate Voltage Low Threshold Voltage High Power and Current Handling Capability This is a Pb−Free Device http://onsemi.com V(BR)DSS Applications

Contextual Info: NTR4171P Power MOSFET −30 V, −3.5 A, Single P−Channel, SOT−23 Features • • • • Low RDS on at Low Gate Voltage Low Threshold Voltage High Power and Current Handling Capability This is a Pb−Free Device http://onsemi.com V(BR)DSS Applications

MAX3232CSE

Abstract: lm317 8 pines ADTG sot 23 p651 MB95F118 N0P35 lm317t P13 U4 INT05 P0C160
Contextual Info: 1 2 3 4 5 6 J2 P0J2044 P0J2046 P0J2048 P0J2050 B P0R1301 UI0 22pf 22pf C14 C15 Y2 P0Y202 1 2 P0Y201 1 2 P0JP7033 P0JP7044 N0P10 P10 Sub CLK 32KHz Default:3-4 INT02 C12 P0C1202 JP6 JP5 LIN Enable VCC VCC 2P0U202 EN 1 P0U201 RXD 4 P0U204 TXD 22uf 25v R11 22K

block schematic of LT1009

Abstract: LM136-2.5
Contextual Info: LT1009 2.5-V INTEGRATED REFERENCE CIRCUIT SLVS013H – MAY 1987 – REVISED MARCH 2002 D D D D D D D D OR PW PACKAGE TOP VIEW Excellent Temperature Stability Initial Tolerance . . . 0.2% Max Dynamic Impedance . . . 0.6 Ω Max Wide Operating Current Range

AD592

Abstract: TMP36 AD22100 AD22103 AD590 TMP03 TMP04
Contextual Info: SENSORSand SIGNAL CONDITIONERS: Sensors, Temperature Part Number Output Output Accuracy Accuracy 25°C Scale Factor 25°C Tmax Linea rity °C Operating Range Spec’d Range °C -55 to +150 -55 to +150 -55 to +150 -55 to +150 Digital Output Supply Range Iq

sot-363 702

Abstract: MPS5172 "cross-reference" BC237 BC307 MMVL3700T1
Contextual Info: CHAPTER 4 Index http://onsemi.com 1121 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22

Contextual Info: SENSORSand SIGNAL CONDITIONERS: Sensors, Temperature Part Number Output Output Accuracy Accuracy 25°C Scale Factor 25°C Tmax Linea rity °C Operating Range Spec’d Range °C -55 to +150 -55 to +150 -55 to +150 -55 to +150 Digital Output Supply Range Iq

low noise transistors bc638

Abstract: BC548 MPS5172 "cross-reference" BC237 LOW NOISE BC638 BC449 "cross-reference" bc307b DTC114E SERIES 2N6520 DIODES MPF4856
Contextual Info: CHAPTER 4 Index http://onsemi.com 1121 http://onsemi.com 1122 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22