72 VNA Search Results

Contextual Info: 2.92mm Male to 2.92mm Female VNA Test Cable 72 Inch Length, RoHS TECHNICAL DATA SHEET PE321-72 2.92mm Male to 2.92mm Female VNA Test Cable 72 Inch Length, RoHS Configuration Connector 1 Connector 1 Specification Connector 2 Connector 2 Specification Cable Type

Contextual Info: 3.5mm Male to 3.5mm Female VNA Test Cable 72 Inch Length, RoHS TECHNICAL DATA SHEET PE317-72 3.5mm Male to 3.5mm Female VNA Test Cable 72 Inch Length, RoHS Configuration Connector 1 Connector 1 Specification Connector 2 Connector 2 Specification Cable Type

Contextual Info: 2.92mm Male to 2.92mm Male VNA Test Cable 72 Inch Length, RoHS TECHNICAL DATA SHEET PE319-72 2.92mm Male to 2.92mm Male VNA Test Cable 72 Inch Length, RoHS Configuration Connector 1 Connector 1 Specification Connector 2 Connector 2 Specification Cable Type

Contextual Info: 3.5mm Male to 3.5mm Male VNA Test Cable 72 Inch Length, RoHS TECHNICAL DATA SHEET PE315-72 3.5mm Male to 3.5mm Male VNA Test Cable 72 Inch Length, RoHS Configuration Connector 1 Connector 1 Specification Connector 2 Connector 2 Specification Cable Type 3.5mm Male

Contextual Info: y Spec. MITSUBISHI LSIs MH8V725AWZJ -5, -6 _ HYPER PAGE MODE 603979776 - BIT 8388608 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V725AWZJ is 8388608-word x 72-bit dynamic ram module. This consist of nine industry standard 8M x 8

Contextual Info: y Spec. MITSUBISHI LSIs MH8V7245AZTJ -5, -6 _ HYPER PAGE MODE 603979776 - BIT 8388608 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V7245AZTJ is 8388608-word x 72-bit dynamic ram module. This consist of nine industry standard 8M x 8

Contextual Info: y Spec. MITSUBISHI LSIs MH8V725AZTJ -5, -6 _ HYPER PAGE MODE 603979776 - BIT 8388608 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH8V725AZTJ is 8388608-word x 72-bit dynamic ram module. This consist of nine industry standard 8M x 8

A49AN

Abstract: adq38 360ac In400I
Contextual Info: I =¥= =• = IBM13N16644HC IBM13N16734HC Preliminary 16M x 64/72 2 Bank Unbuffered SDRAM Module Features • 168-Pin Unbuffered 8-Byte Dual In-Line Memory Module • 16Mx64/72 Synchronous DRAM DIMM • Three speed sorts: • -260 and -360 for PC100 applications

Contextual Info: IBM13Q8739CC 8M x 72 Buffered SDRAM Module Features • 200-Pin emerging JEDEC Standard, Buffered 8Byte Dual In-line Memory Module • 8M x 72 Synchronous DRAM DIMM • Performance: CAS Latency = 2* -10 j Units j ! MHz j ; ns jfcK j Clock Frequency 66 ; tcK2

ADQ45

Abstract: AADQ44 13N4649
Contextual Info: Discontinued 12/38 » last order; 9/99 las! ship IBM13N4649JC IBM13N4739JC 4M x 64/72 2 Bank Unbuffered SDRAM Module Features • 168-Pin Unbuffered 8-Byte Dual In-Line Mem­ ory Module • 4Mx64/72 Synchronous DRAM DIMM • Two speed sorts: • -360 for PC100 applications

Contextual Info: y Spec. MITSUBISHI LSIs SSSÄ-SK* M H 1 6 V 7 2 5 A W J -5, -6 _ HYPER PAGE MODE 1207959552 - BIT 16777216 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH16V725AWJ is 16777216-word x 72-bit dynamic ram module. This consist of eighteen industry standard

Contextual Info: y Spec. MITSUBISHI LSIs SSSÄ-SK* M H 1 6 V 7 2 5 B W J -5, -6 _ HYPER PAGE MODE 1207959552 - BIT 16777216 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION The MH16V725BWJ is 16777216-word x 72-bit dynamic ram module. This consist of eighteen industry standard

Contextual Info: I = = = = ¥ = = = ’ = IB M 1 3 N 4 6 4 4 M C IB M 1 3 N 4 7 3 4 M C Preliminary 4M x 64/72 1 Bank Unbuffered SDRAM Module Features • 168-Pin Unbuffered 8-Byte Dual In-Line Memory Module • 4Mx64/72 Synchronous DRAM DIMM • Two speed sorts: • -360 for PC100 applications

Contextual Info: Preliminary KMM374S823BT PC100 SDRAM MODULE KMM374S823BT SDRAM DIMM 8Mx72 SDRAM DIMM with ECC based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM374S823BT is a 8M bit x 72 Synchronous Performance range

ad8307 power meter

Abstract: AD8302 ad8307 transmit power control phase detector AD8302 "logarithmic amplifier" decibel meter design of multi section directional coupler AND8314 AD8314 Logarithmic Amplifier detector rf power
Contextual Info: MWnov072 10/31/02 4:04 PM Page 72 RF POWER MEASUREMENTS DESIGN Make Precise Base-Station Power Measurements m A highly integrated device with a pair of logarithmic amplifier detectors operating to approximately 3 GHz can be useful in making amplitude and phase measurements on two input signals.

Contextual Info: IB M 1 3 Q 1 6 7 3 4 H C A 16M X 72 Registered SDRAM Module Features • 200-Pin JEDEC Standard, Registered 8-Byte Dual In-line Memory Module • Automatic and controlled Precharge Commands • 16M -SDRAM CAS Latency: 2 -Burst Type: Sequential or Interleave

tea 9502

Abstract: Electronic Arrays Inc T3FL 9502c inverter /Invertron Vti
Contextual Info: V L S I TECHNOLOGY I NC 72 dË| T3flfl3M7 D D D 0 4 2 D 5 | p ^~~T-42-ll-09 % VGC SERIES ADVANCED 2-MICRON CMOS GATE ARRAY FAMILY Q FEATURES • 500,900,1200,1900,2400,3200, 4000,6000 and 8000 gates. • True 2-micion silicon gate CMOS technology • High performance—

Contextual Info: IBM13M16734BCD 16M x 72 1 B ank R eg istered/B uffered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 16Mx72 Synchronous DRAM DIMM • Performance: -10 I -260 S-360 ; -360 i Units S I Device Latency 3 i I Clock Frequency

BFW11

Abstract: bfw11 equivalent BFW10 in drain resistance
Contextual Info: BFW10 BFW11 N-CHANNEL SILICON FETS Symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes with the shield lead connected to the case. The transistors are designed for broad band amplifiers 0 to 300 MHz . Their very low noise at low frequencies makes these devices very suitable for differential

Nippon capacitors

Contextual Info: HB56UW3272ETL-5/6 256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit, 8k Refresh, 2 Bank Module 36 pcs of 16M x 4 components HITACHI ADE-203-866 (Z) Preliminary, Rev. 0.0 Nov. 28, 1997 Description The HB56UW 3272ETL belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been

TELTONE

Abstract: can obd
Contextual Info: 1-,. yg3K- TELTONE CORP 72 » E | 0^32445 DDDOflSS 7^ |~ D 7 ^ - 7 5 -<27 ' ¿ 7 M-958-02 PCM COMPATIBLE DTMF RECEIVER Features • • • • • • • The Teltone M-958-02 is a complete dial tone immune DTMF receiver with a fi-255 Law input. Simple clock and

DQ849

Contextual Info: MONOLITHIC AMPLIFIERS HIGH DIRECTIVITY 50Ω 0.5 to 5.9 GHz NEW! VNA All specifications at 25°C u MODEL NO. FREQ. GHz DC VOLTS (V) fL - fU GAIN, dB Typical 0.5 MAXIMUM POWER (dBm) over frequency, GHz 1.0 1.5 2.0 2.5 Min. at 2 GHz Output (1 dB Comp.) Typ.

DQ849

Abstract: TB-186 VNA-21 VNA-22 VNA-23 VNA-25 VNA-28 XX211 72 vna
Contextual Info: MONOLITHIC AMPLIFIERS HIGH DIRECTIVITY 50Ω 0.5 to 5.9 GHz NEW! VNA All specifications at 25°C u MODEL NO. FREQ. GHz DC VOLTS (V) fL - fU GAIN, dB Typical 0.5 MAXIMUM POWER (dBm) over frequency, GHz 1.0 1.5 2.0 2.5 Min. at 2 GHz Output (1 dB Comp.) Typ.

Contextual Info: High Directivity VNA-22+ VNA-22 Monolithic Amplifier 50Ω 0.5 to 2.5 GHz Maximum Ratings Operating Temperature Features -40°C to 85°C Storage Temperature -55°C to 150°C DC Voltage 8V Power 800mW Input Power no damage 10 dBm Pin Connections • 3V & 5V operation