71328 Search Results

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Abstract: 1bw 85 271326 intel 27218
Contextual Info: Ä E W Ä K l ! D M F fö ß iflÄ irD © rc ] in te l SPECIAL ENVIRONMENT 80960CF-30, -25, -16 32-BIT HIGH-PERFORMANCE SUPERSCALAR PROCESSOR • Socket and Object Code Compatible with 80960CA • Two Instructions/Clock Sustained Execution • Four 59 Mbytes/s DMA Channels with Data Chaining

Low Drop Low Power Voltage Regulator

Abstract: TK71 TK71328M
Contextual Info: SPECIFICATION TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3. F u n d ion 4. Applications 5.Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit 10.Pin Assignment 11.Block Diagram 12.Definition 13.Package Outline Dimensions/Marking

Contextual Info: 2014 Professional HEX Tools Inch & Metric Complete Hex Program Toll Free: 800 494-6104 2 Wiha Hex Tools Index Wiha Ball End Hex Tools Index DESCRIPTION Page Ball End L-keys & Sets 6 Colored Coded L-keys 5 Ball End L-keys & Sets 7-9 L-keys - Long/Short

Si7844DP

Abstract: Si7844DP-T1
Contextual Info: Si7844DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET D 100% Rg Tested ID (A) rDS(on) (W) 0.022 @ VGS = 10 V 10 0.030 @ VGS = 4.5 V 8.5 PowerPAKr SO-8 D1 S1 6.15 mm D1 D2 D2 5.15 mm 1 G1 2

Astable Multivibrator

Abstract: CD4007UB CD40106BMS IOH15 VP10 7133-1 transistor
Contextual Info: CD40106BMS CMOS Hex Schmitt Triggers December 1992 Features Pinout • High Voltage Type 20V Rating CD40106BMS TOP VIEW • Schmitt Trigger Action with No External Components • Hysteresis Voltage (Typ.) - 0.9V at VDD = 5V - 2.3V at VDD = 10V - 3.5V at VDD = 15V

s0245

Abstract: Si7844DP
Contextual Info: Si7844DP New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) ID (A) rDS(on) (W) 30 0.022 @ VGS = 10 V 10 0.030 @ VGS = 4.5 V 8.5 D1 D1 D2 D2 PPAK S1 6.15 mm 5.15 mm 1 G1 2 S2 3 G1 G2 G2 4 D1 8 D1 7 D2 6 D2 S1 S2 N-Channel MOSFET

Contextual Info: Si7844DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.022 at VGS = 10 V 10 0.030 at VGS = 4.5 V 8.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

7133-1 transistor

Abstract: CD40106BMS
Contextual Info: CD40106BMS ÊB «a« CMOS Hex Schmitt Triggers December 1992 Pinout Features CD40106BMS TOP VIEW • High Voltage Type 20V Rating • Schmitt Trigger Action with No External Components • Hysteresis Voltage (Typ.) - 0.9V at VDD = 5V - 2.3V at VDD = 10V

Si7844DP

Abstract: Si7844DP-T1 Si7844DP-T1-E3
Contextual Info: Si7844DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 10 0.030 at VGS = 4.5 V 8.5 • TrenchFET Power MOSFET • 100 % Rg Tested Pb-free Available RoHS* COMPLIANT PowerPAK® SO-8

Contextual Info: 10 MTP Category 6A Cable The Industry’s Top-Performing, Thin-Profile 10 Gig Cable Future-proof your networks with the trusted technology behind the GenSPEED 10 MTP™ Category 6A Cable which now features a reduced diameter and enhanced performance. The latest generation of the

Si7844DP

Abstract: Si7844DP-T1-E3
Contextual Info: Si7844DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.022 at VGS = 10 V 10 0.030 at VGS = 4.5 V 8.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: Si7844DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.022 at VGS = 10 V 10 0.030 at VGS = 4.5 V 8.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

71328

Contextual Info: Si7844DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.022 at VGS = 10 V 10 0.030 at VGS = 4.5 V 8.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Contextual Info: Semiconductor CD40106BMS CMOS Hex Schmitt Triggers December 1992 Pinout Features • High Voltage Type 20V Rating CD40106BMS T O P V IE W • Schmitt Trigger Action with No External Components Kj a - 0.9V at VDD = 5V m =Ä [7 H = B • Noise Immunity Greater than 50%

Contextual Info: Si7844DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 10 0.030 at VGS = 4.5 V 8.5 • TrenchFET Power MOSFET • 100 % Rg Tested Pb-free Available RoHS* COMPLIANT PowerPAK® SO-8

Contextual Info: Si7844DP Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.022 at VGS = 10 V 10 0.030 at VGS = 4.5 V 8.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested

Tentative

Abstract: 4M1E
Contextual Info: & CD40106BMS H a r r is CMOS Hex Schmitt Triggers December 1992 Pinout Features CD40106BMS TOP VIEW • High Voltage Type 20V Rating • Schmitt Trigger Action with No External Components *E • Hysteresis Voltage (Typ.) - 0.9V at VDD = 5V - 2.3V at VDD = 10V

CD40106BMS

Abstract: IOH15 VN10 VP10
Contextual Info: CD40106BMS CMOS Hex Schmitt Triggers December 1992 Features Pinout • High Voltage Type 20V Rating CD40106BMS TOP VIEW • Schmitt Trigger Action with No External Components • Hysteresis Voltage (Typ.) - 0.9V at VDD = 5V - 2.3V at VDD = 10V - 3.5V at VDD = 15V

CD40106BMS

Abstract: IOH15 VN10 VP10 CD40106
Contextual Info: S E M I C O N D U C T O R CD40106BMS CMOS Hex Schmitt Triggers December 1992 Features Pinout • High Voltage Type 20V Rating CD40106BMS TOP VIEW • Schmitt Trigger Action with No External Components • Hysteresis Voltage (Typ.) - 0.9V at VDD = 5V - 2.3V at VDD = 10V

SI7844DP

Contextual Info: Si7844DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET D 100% Rg Tested ID (A) rDS(on) (W) 0.022 @ VGS = 10 V 10 0.030 @ VGS = 4.5 V 8.5 PowerPAKr SO-8 D1 S1 6.15 mm D1 D2 D2 5.15 mm 1 G1 2

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Si7844DP

Abstract: Si7844DP-T1-E3
Contextual Info: Si7844DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 10 0.030 at VGS = 4.5 V 8.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg Tested

DIN 72585

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s0245

Abstract: Si7844DP
Contextual Info: Si7844DP New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) ID (A) rDS(on) (W) 30 0.022 @ VGS = 10 V 10 0.030 @ VGS = 4.5 V 8.5 D1 D1 D2 D2 PowerPAKt S1 6.15 mm 5.15 mm 1 G1 2 S2 3 G1 G2 G2 4 D1 8 D1 7 D2 6 D2 S1 S2 N-Channel MOSFET