D4MB
Contextual Info: PHILIPS INTERNATIONAL Data sheet status Preliminary specification date of issue March 1991 Sfc.E D • 711Qfl2b □ D4 Mb bti 17T « P H I N BUK 476-1000A/B PowerMOS transistor Replaces BUK446-1000A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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711qfl2b76-1000a/bbuk446-1000a/bbuk476+7-1000a-1000b-sot186at-39-09buk476-1000a/b7110fi2bd4mb
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J 3305-2
Abstract: NE604AN NE602 application NE604 Philips NE604AD SA604A SA604AN variable inductor Signetics NE602 SA604A equivalent
Contextual Info: R F COMMUNICATIONS PRODUCTS NE/SA604A High performance low power FM IF system Product specification December 1 5,1 9 94 IC17 Data Handbook Philips Semiconductors PHILIPS PHILIPS V 711Qfl2b □ □ f l l4S33 Printed From CAPS XPert Version 1,2P 73S This Material Copyrighted By Philips Semiconductors.
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ne/sa604a711002b14s33853-0406c+10j 3305-2ne604anne602 applicationne604 philipsne604adsa604asa604anvariable inductorsignetics ne602sa604a equivalent
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ck3 ppc
Abstract: 80C51 83C504 87C504 exo 35j DSTRT
Contextual Info: • 711Qfl2b 0 0 b b 2 S 7 i m ■PHIN Philips Semiconductors Microcontroller Products Objective specification CMOS single-chip 8-bit microcontroller DESCRIPTION FEATURES The 83C504 and 87C504 hereafter referred to as 8XC504 Single-Chip 8-Bit Microcontroller is manufactured in an
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83c504/87c50483c50487c5048xc504+580c5116-bitck3 ppcexo 35jdstrt
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xl 3358
Abstract: function of tv deflection section KA025 tda9151 ic 2n35 data ttl D372 UKA039 gbs transistor RFT Semiconductors
Contextual Info: Philips S em iconductors O bjective specification Programmable deflection controller TDA9151 T - 7 7 - o r - u PH IL IP S INTERNATIONAL FEATURES 711Qfl2b 00 37 2 0 5 S b l 5bE D General • Current source output for high EMC immunity • 6.75,13.5 and 27 MHz clock
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tda9151t-77-or-w16-bit711002b+11t-77-711005b003730bxl 3358function of tv deflection sectionka025ic 2n35 data ttld372uka039gbs transistorrft semiconductors
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Contextual Info: PHILIPS INTERNATIONAL bOE D • 711Qfl2b G0S700fi T42 IPHIN Philips Components LTA342 Data sheet status Product specification date of issue July 1990 Liquid Crystal Display DEVICE DESCRIPTION The LTA342 is a 24-character, 2-line dot matrix display. Typical applications include hand held equipment and
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711qfl2bg0s700filta34224-character+483x187110fl2b711gfl2bgos7g12
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FET BFW61
Abstract: BFW61 v511 304 fet transistor N CHANNEL FET BFW61
Contextual Info: 711Qfl2b D0t7tiflM TS3 M P H I N BFW61 N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in aTO -72 metal envelope w ith the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers.
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7110fl2bbfw61ato-72fet bfw61+3v511304 fet transistorn channel fet bfw61
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FMCON
Abstract: EA28 80C51 P80CE528 P80CE528EBA P80CE528EBB P80CE528EFB P83CE528 P89CE528
Contextual Info: PHILIPS INTERNATIONAL bSE D B 711Qfl2b QDbl2b3 1S1 • P H I N Philips Semiconductors Preliminary specification 8-bit microcontroller with EMC and FEEPROM P8xCE528 CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 3.1 4 ELECTROMAGNETIC COMPATIBILITY EMC Recommendation on ALE
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711qfl2bp8xce528fmconea28+780c51p80ce528p80ce528ebap80ce528ebbp80ce528efbp83ce528p89ce528
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DIODE T25 4 EO
Abstract: B44 transistor 711002b BUK456-60H T0220AB PHILIPS fw 373
Contextual Info: fc,SE i> PHILIPS INTERNATIONAL m 711Qfl2b QObMlll b4H « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711002bbuk456-60ht0220abdiode t25 4 eo+2b44 transistorphilips fw 373
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BFQ295
Abstract: BFQ296
Contextual Info: Prelim inary specification Philips Sem iconductors PNP HDTV video transistor 7 ^ 3 3 PHILIPS INTERNATIONAL FEATURES 5bE D • BFQ295 711Qfl2b QDM5b?7 132 « P H I N PINNING DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1 emitter •
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bfq2957110fl2bqdm5b77bfq296+1ot128b
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transistor abe 438
Abstract: sti 7110 F103G marking 33a on semiconductor microwave transistor 03 npn power amplifier circuit NPN Silicon Epitaxial Planar Transistor MX1011B400W FO-91 TRANSISTOR package FO-91
Contextual Info: “7 — 3 3 -/5 ' Prelim inary specification Philips Sem iconductors NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL MX1011B400W 5bE J> 711Qfl2b 00Mb3b2 'ISb « P H I N FEATURES DESCRIPTION APPLICATIONS • Suitable for short and medium
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-t-33-asmx1011b400w711qfl2b00mb3b2+14us/10fo-91b03ghzmcu133711002btransistor abe 438sti 7110f103gmarking 33a on semiconductormicrowave transistor 03npn power amplifier circuitnpn silicon epitaxial planar transistorfo-91 transistor packagefo-91
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JZ2 transistor
Abstract: 1S93 BUK454-500B T0220AB ADl40
Contextual Info: bSE J> PHILIPS INTERNATIONAL 711Qfl2b O O b H Q b l 2 ^ Philips Semiconductors BUK454-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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7110a2bbuk454-500bt0220abds10n+3jz2 transistor1s93adl40
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on 614 power transistor
Abstract: transistor 614 100-P BUK445-400B
Contextual Info: PHILIPS INTERNATIONAL bSE ]> • 711Qfl2b □Qb40Dl 614 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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711qfl2bqb40dlbuk445-400bot186+3on 614 power transistortransistor 614100-p
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BDT88
Abstract: BDT81 BDT82 BDT83 BDT84 BDT85 BDT86 BDT87
Contextual Info: BDT82; BDT84 BDT86; BDT88 PHILIPS INTERNATIONAL SbE D • 711Qfl2b 0043314 421 ■ PHIN T -3 1 -2 3 SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a T 0-22 0 plastic envelope, designed fo r use in audio o u tp u t stages and general am plifier and switching applications.
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bdt82bdt84bdt86bdt88+6t-31-23t0-220bdt81bdt83bdt85bdt87
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Contextual Info: Product specification Philips Semiconductors T -3 H 0 NPN 12 GHz wideband transistor crystal PHILIPS INTERNATIONAL 5bE D DESCRIPTIO N • X3A-BFQ33 711Qfl2b GDMbGTM 713 M EC H AN ICA L DATA NPN crystal used in BFQ33C SOT173 and BFG33 ( S O U 43). Crystals are supplied as whole wafer, fully
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x3a-bfq33711qfl2bbfq33cot173+2bfg3315nimum
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Philips 7 digit 7 segment lcd display
Contextual Info: PHILIPS INTERNATIONAL bOE D • 711Qfl2b 00S7D77 4ET » P H I N Philips C o m p o nents LTD235 Data sheet status P rod uct specification date of issue July 1990 7 Liquid crystal display DEVICE DESCRIPTION QUICK REFERENCE DATA The LTD235 is a 4-digit 7 segment multi-function LCD.
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711qfl2b00s7d77ltd235711082b+300s70ltd235r-12philips 7 digit 7 segment lcd display
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philips bfq
Abstract: BFQ263 BFQ263A RK 100
Contextual Info: Product specification Philips S em iconductors - r & 3 ~ DESCRIPTION > 5 BFQ263; BFQ263A NPN 1 GHz video transistors • 5bE D PHILIPS IN TE RNATIONAL c 711062t. 0045b4û 331 « P H I N PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with
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bfq263bfq263a711062b0045bi+4711qfl2bt-33-05philips bfqrk 100
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8uk453
Abstract: BUK453-60A BUK453-60B T0220AB
Contextual Info: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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7110fi2bbuk453-60a/bt0220abbuk453+38uk453buk453-60abuk453-60b
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philips fm demodulator satellite
Abstract: philips PLL FM DEMODULATOR fm pll demodulator detector pll fm demodulator TDA8730 fm demodulator A244 demodulator frequency satellite tuners philips FM tuners
Contextual Info: Philips Semiconductors Preliminary specification T-77-05'-05' PLL FM demodulator for DBS signals_ PHILIPS INTERNATIONAL GENERAL DESCRIPTION The TDA8730 is a sensitive PLL demodulator for the second IF and direct broadcasting satellite DBS
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t-77-05--05tda8730711002b0d371+10d0371fibphilips fm demodulator satellitephilips pll fm demodulatorfm pll demodulator detectorpll fm demodulatorfm demodulatora244demodulator frequencysatellite tunersphilips fm tuners
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ablebond 293-1
Abstract: philips 3h1 pot core pot core 3h1 NEOSID metal detector coil DIAGRAM metal detector diagram VD neosid OM386M NEOSID 22 inductive proximity detector ic
Contextual Info: OM386M OM387M \ PHILIPS INTERNATIONAL 5bE D m 711002b Ô3Ô • HYBRID INTEGRATED CIRCUITS FOR INDUCTIVE PROXIMITY DETECTORS H y b rid integrated c ircu its intended fo r in d u ctive p ro x im ity detectors in tu b u la r co n stru ctio n , especially th e M 8 h o llo w stud. The O M 386M is fo r positive supply voltage and th e O M 387M is fo r
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om386mom387m711002bom386b/om387b+107z69066ablebond 293-1philips 3h1 pot corepot core 3h1neosidmetal detector coil diagrammetal detector diagramvd neosidneosid 22inductive proximity detector ic
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ECMI
Abstract: IT 331 CTS 10MHz oscillator MAB8048 PCF84C853AP PCF84C853AT
Contextual Info: PHILIPS INTERNATIONAL 3ME D • 711005b GGllb23 Q ■ PCF84C853A SINGLE-CHIP 8-BIT MICROCONTROLLER WITH DERIVATIVE PORTS, TIMER/CAPTURE AND TIMER/COUNTER DESCRIPTION The PCF84C853A is a microcontroller with 33 quasi-bidlrectlonal I/O port lines. In addition to the shared features of the
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711005bggllb23pcf84c853apcf84cxx+9pcf84c85384cxxx16-bitecmiit 331cts 10mhz oscillatormab8048pcf84c853appcf84c853at
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TIL 494
Abstract: ne5081 fsk modem NE5080 NE5080N til494 16pin 502 617
Contextual Info: P hilips Sem iconductors Data C om m unications Products Product specification High-speed FSK modem transmitter DESCRIPTION NE5080 PIN CONFIGURATION The NE5080 is the transmitter chip, of a two-chip set, designed to be the heart of an FSK modem. The NE5081 is the receiver chip. The
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ne5080ne5081seean19507110fl2b+67110fl5btil 494fsk modemne5080ntil49416pin 502 617
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Philips FA 261
Abstract: Microcontroller AT89S52 40 pin diagram TOP3 package WL 431 80C51 83L51FA 87L51FA 8XL51FA
Contextual Info: 711002b OObbll? ^47 H P H I N Philips Semiconductors Microcontroller Products Product specification CMOS single-chip 3.0V 8-bit microcontroller DESCRIPTION FEATURES The 87L51 FA and 83L51 FA hereafter generically referred to as 8XL51FA Single-Chip 3.0V 8-Bit Microcontrollers are
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7110fl2b83l51fa/87l5187l5183l51+108xl51fa80c518xl5116-bitphilips fa 261microcontroller at89s52 40 pin diagramtop3 packagewl 43183l51fa87l51fa
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D0447
Abstract: K572 00M4 Scans-00501 BUK572 12VBS
Contextual Info: PHILIPS 5bE INTERNATIONAL D • 711002b 00M4704 DT3 ■ Philips Components_ Datasheet status Preliminary specification date of issue March 1991 Replaces BUK542-60A/B GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack
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buk542-60a/b711002b00m4704k572-60a/b+7pinning-sot186abuk572d0447k57200m4scans-0050112vbs
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74LVC821D
Abstract: 74LVC821PW FF10
Contextual Info: Philips Semiconductors Objective Specification 10-Bit D-type flip-flop; positive-edge trigger; 3-state FEATURES • • • • • • • • • Wide supply voltage range of 1.2 V to 3.6 V In accordance with JEDEC standard no. 8-1 A. Inputs accept voltages upto
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10-bit74lvc8217110fi2bd7ss74+374lvc821d74lvc821pwff10
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