711GFLEB Search Results

lcd for multimeters

Abstract: Philips 3.5 digit 7 segment lcd display
Contextual Info: bOE D PHILIPS INTERNATIONAL 711GflEb ÜDS7D33 1T3 IPHIN Philips Components LTD203 Data sheet status Product specification date of issue July 1990 Liquid crystal display QUICK REFERENCE DATA DEVICE DESCRIPTION The LTD203 is a 4-digit, 7-segment multi-function LCD.

BFQ741

Contextual Info: Objective specification Philips Semiconductors ' '3 3 -Q5 NPN 7 GHz wideband transistor PH IL IP S I N T E R N A T I O N A L FEATURES 5L.E D • BFQ741 711GflEb ODMSbflO 727 ■ P H I N PINNING DESCRIPTION PIN • Low distortion • Gold metallization ensures

TIP3055T

Contextual Info: D E V E L O P M E N T DATA TIP3055T T S ? -!' T his data sheet contains advance inform ation and specifications are subject to change w ithout notice. SbE D PHILIPS INTERNATIONAL 711GflEb DGM3t.m 174 PHIN SILICON EPITAXIAL-BASE POWER TRANSISTOR N-P-N transistor in a plastic envelope. With its p-n-p complement T IP2955T they are primarily intended

transistor 3bt

Abstract: 3bt pnp BFQ292 BFQ293
Contextual Info: Prelim inary specification Philips Sem iconductors BFQ292 PNP HDTV video transistor PH IL IP S INTERNATIONAL 711GflEb □□45L.7S 3t.T PINNING FEATURES • SbE D DESCRIPTION PIN High breakdown voltages • Low output capacitance 1 emitter • High gain bandwidth product

JF494

Contextual Info: JF494 PHILIPS INTERNATIONAL 5bE » 711GflEb OGMSifflLJ 03^ • PHIN T-7/-/7 SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a pfastic TO-92 variant intended fo r HF applications in radio and television receivers; it is especially recommended fo r FM tuners, low noise AM mixer-oscillators with high source

74ABT543DB

Abstract: 1641A 74ABT245 74ABT373 74ABT543 74ABT543D 74ABT543N ABT543 74ABT543 Philips
Contextual Info: P H I L IP S INTERNATIONAL IPH IN 711GflEb 0D57S0Ô SS? bSE D Product specification rnmps aemiconaucxors Advanced BiCMOS Products Octal latched transceiver with dual enable 3-State FEATURES • Combines 74ABT245 and 74ABT373 type functions in one device

SFE10.52MJA10

Abstract: 8745H
Contextual Info: Philips Semiconductors Preliminary specification Satellite sound receiver with l2C-bus control TDA8745 FEATURES • On-chip frequency synthesizer and mixer: - tuning range 4 to 9.77 M Hz - reference oscillator 4 M H z using a crystal or 4 MHz frequency source

ECMI

Abstract: IT 331 CTS 10MHz oscillator MAB8048 PCF84C853AP PCF84C853AT
Contextual Info: PHILIPS INTERNATIONAL 3ME D • 711005b GGllb23 Q ■ PCF84C853A SINGLE-CHIP 8-BIT MICROCONTROLLER WITH DERIVATIVE PORTS, TIMER/CAPTURE AND TIMER/COUNTER DESCRIPTION The PCF84C853A is a microcontroller with 33 quasi-bidlrectlonal I/O port lines. In addition to the shared features of the

TIL 494

Abstract: ne5081 fsk modem NE5080 NE5080N til494 16pin 502 617
Contextual Info: P hilips Sem iconductors Data C om m unications Products Product specification High-speed FSK modem transmitter DESCRIPTION NE5080 PIN CONFIGURATION The NE5080 is the transmitter chip, of a two-chip set, designed to be the heart of an FSK modem. The NE5081 is the receiver chip. The

a 933 transistor

Abstract: BFR90A 2912 TRANSISTOR PNP bfr90A philips BFQ51 3FR90 mcd001
Contextual Info: Philips Semiconductors Product specification 7 = 3 A -/7 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE D ^ BFR90A 7110fi5Li □D4St.cì2 44Ì M P H I N PINNING • Low noise • Low intermodulation distortion PIN • High power gain 1 •

P83C524

Abstract: 80C51 P83C524FBA P83C524FBP P83C524FFA P83C524FFP P83C524FHP
Contextual Info: P H IL IP S I N T E R N A T I O N A L bSE J> □ 7 1 1 D Ö 2 b D D b l 3 4 3 544 H P H I N Philips Preliminary specification 8-bit microcontroller P83C524 CONTENTS 15 INSTRUCTION SET 1 FEATURES

41ba

Abstract: BUW13AF BUW13F UBC098 sot199
Contextual Info: Product specification Philips Semiconductors BUW13F; BUW13AF Silicon diffused power transistors High-voltage, high-speed, glass-passivated npn power transistor in a SOT199 envelope intended fo r use in converters, inverters, switching regulators, motor control systems, etc.

BD235 PHILIPS

Abstract: bd234c BD234 Philips
Contextual Info: BD234; BD236; BD238 PHILIPS INTERNATIONAL 5bE D • 711002b 0D42öb2 ATI ■ P H I N SILICON EPITAXIAL-BASE P O W E R TRANSISTORS P-N-P tra n sis to rs in a SOT-32 plastic envelope intended for use in television and audio am plifier c irc u its where high peak pow ers can occur. N-P-N complements a re BD233,

74LV4316

Abstract: 74LV4316D 74LV4316DB 74LV4316N 74LV4316PW
Contextual Info: Philips Semiconductors Product Specification Quad bilateral switches FEATURES • • • • • • • Optimized for Low Voltage applications: 1.0 to 6.0 V Accepts TTL input levels between Vcc = 2.7 V and Vcc = 3.6 V Low typ "ON" resistance: 80 S2 at Vcc - VEE = 4.5 V

8A79

Abstract: SMD transistors 33T cable tv amplifier SSOP28 TDA5732 TDA6402 TDA6402M TDA6403 TDA6403M TSA5526
Contextual Info: Philips Semiconductors Preliminary specification 5 V mixer/oscillator and synthesizer for cable TV and VCR 2-band tuners TDA6402; TDA6403 FEATURES • Single-chip 5 V mixer/oscillator and synthesizer for cable TV and VCR tuners • Synthesizer function compatible with existing TSA5526

BY448

Contextual Info: Philips Semiconductors Product specification Damper diode BY448 FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed construction. • High maximum operating temperature This package is hermetically sealed and fatigue free as coefficients of

OLS 049

Abstract: MS-012AC TEA1113 TEA1113T microphone preamp agc
Contextual Info: Philips Semiconductors Product specification Low voltage versatile telephone transmission circuit with dialler interface TEA1113 FEATURES GENERAL DESCRIPTION • Low DC line voltage; operates down to 1.6 V excluding polarity guard The T E A 1113 is a bipolar integrated circuit that performs

74*2448

Abstract: 74LVT16244B 74LVT16244BDGG 74LVT16244BDL LVT16244B
Contextual Info: Philips Semiconductors Low Voltage Products Preliminary specification 3.3V ABT 16-Bit buffers/drivers 3-State FEATURES 74LVT16244B inputs • 16-bit bus interface • 3-State buffers • Output capability: +64mA/-32mA • TTL input and output switching levels

TDA1522

Abstract: cassette head preamplifier philips 1N4148 R101 stereo preamplifier 16 pin ic
Contextual Info: Philips Semiconductors Product specification Stereo cassette head preamplifier and equalizer TDA1522 FEA TU R ES G E N E R A L D ES C R IPTIO N • Two independent amplifiers with open-loop gain of 90 dB typical The T D A 1522 is a playback amplifier for car radio/cassette

SAA2051

Abstract: 51fs Mka7 IN23B IN34A in67a
Contextual Info: Philips S em iconductors Prelim inary specification DCC read amplifier READ 3 TDA1380 FEATURES • Single 3 V supply • Low power consumption • Differential inputs for low power head configuration COMPACT CASSETTE • Can be used with 1st, 2nd and 3rd generation digital

Contextual Info: Philips Semiconductors Military FAST Products Product specification Latch/Flip-Flops FEATURES • 54F573 is broadside pinout version of 54F373 • 54F574 is broadside pinout version ot 54F374 • Inputs and outputs on opposite side of package allow easy interface to

transistor tt 2222

Abstract: TT 2222 os TT 2222 LM 2222 transistor tt 2222 vertical BLf221 2222-581 BH RV transistor BLF221B OP03
Contextual Info: Preliminary »pacification Philips Semiconductors HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES BLF221B SbE D • 7110fl5b 0DM37Mel 37M HIPHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability

Philips MAB8021

Abstract: JZ 1-1A 8048 microcontroller 84xx family MAB8021 7475b sl 7284 MAB84XX mab84xx family interfacing the 2732 eprom
Contextual Info: MAB84X1 MAF84X1 MAF84AX1 FA M ILY SINGLE-CHIP 8-BIT MICROCONTROLLER D ESC RIPTIO N The MAB84X1 family of microcontrollers is fabricated in NMOS. The family consists of5devices: • MAB8401 — 128 bytes RAM, external program memory, with 8-bit LED-driver 10mA ,

BH rx transistor

Abstract: transistor cms BUK474-400B BUK474 3909
Contextual Info: ~ Philips Components Data sheet status Preliminary specification date of issue March 1991 N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,