70N2 Search Results

6-6605851-1

Abstract: 70N2 MAG45
Contextual Info: 6 7 TH IS DRAWING IS U N P U B LIS H E D . RELEASED FOR 5 4 2 3 PUBLICATION L0C AA ALL RIGHTS RESERVED. COPYRIGHT - By - D IS T R E V I S I ON S 22 LTR D E SC RIPTIO N REVISED PER DWN DATE RK HMR I3 AP R 1 EC O -1 1- 0 0 5 1 40 APVD MECHANICAL: MATERIALS:

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

STL70N

Contextual Info: 70N2LLH5 N-channel 30 V, 0.0059 Ω, 18 A PowerFLAT 5x6 STripFET™ V Power MOSFET Preliminary data Features Type VDSS RDS(on) max ID 70N2LLH5 30 V <0.0068 Ω 18 A (1) 8 1. This value is rated according to Rthj-pcb 1 • RDS(on) * Qg industry benchmark

VDSS-25V

Contextual Info: 70N2LH5 70N2LH5 N-channel 25 V - 0.006 Ω - 48 A - DPAK - IPAK STripFET V Power MOSFET Preliminary Data Features Type VDSS RDS on max ID 70N2LH5 25 V 0.0071 Ω 48 A 70N2LH5 25 V 0.0075 Ω 48 A 3 3 • RDS(on) * Qg industry benchmark ■

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

70N15A

Abstract: 90N20BC 90N8B 70N15BR 70N20A 70N20B 70N30AC 70N30BH 90N20A 90N26BA
Contextual Info: #5. P179-198 02.2.5 4:14 PM ページ 184 CRYSTAL FILTERS 70, 90MHZ SERIES MCF • Features 8 Compactness and light weight 8 Low insertion loss 8 Stable temperature characteristics ■ 70MHz, 90MHz Overtone Model Nominal Frequency MHz Pole 70 2 70N15A Pass Bandwidth

Contextual Info: 70N2LLH5 N-channel 30 V, 0.0059 Ω, 18 A PowerFLAT 5x6 STripFET™ V Power MOSFET Preliminary data Features Type VDSS RDS(on) max ID 70N2LLH5 30 V <0.0068 Ω 18 A (1) 8 5 1. This value is rated according to Rthj-pcb 1 • RDS(on) * Qg industry benchmark

Contextual Info: 70N2LH5 70N2LH5 N-channel 25 V, 0.006 Ω, 48 A - DPAK - IPAK STripFET V Power MOSFET Preliminary Data Features Type VDSS RDS on max ID 70N2LH5 25 V 0.0071 Ω 48 A 70N2LH5 25 V 0.0075 Ω 48 A ) s ( ct 3 3 • RDS(on) * Qg industry benchmark

Contextual Info: 70, 90MHz Series MCF • Features 8 Compactness and light weight 8 Low insertion loss 8 Stable temperature characteristics ■ 70MHz, 90MHz Overtone Model Nominal Frequency MHz Pole 70 2 70N15A Pass Bandwidth (dB) 3 (kHz) ±7.5 Attenuation Bandwidth Ripple

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This

90N8B

Abstract: 70N15A 70N15BR 70N20A 70N20B 70N30AC 70N30BH 90N20A 90N20BC 90N26BA
Contextual Info: 70, 90MHz Series MCF • Features 8 Compactness and light weight 8 Low insertion loss 8 Stable temperature characteristics ■ 70MHz, 90MHz Overtone Model Nominal Frequency MHz Pole 70 2 70N15A Pass Bandwidth Attenuation Bandwidth Ripple (dB) (kHz) (dB)

Contextual Info: 70, 90MHZ SERIES MCF • Features 8 Compactness and light weight 8 Low insertion loss 8 Stable temperature characteristics ■ 70MHz, 90MHz Overtone Model Nominal Frequency MHz Pole 70 2 70N15A Pass Bandwidth (dB) 3 (kHz) ±7.5 Attenuation Bandwidth Ripple

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

70N2LH5

Abstract: JESD97 STD70N2LH5 STU70N2LH5 ISD24
Contextual Info: 70N2LH5 70N2LH5 N-channel 25 V, 0.006 Ω, 48 A - DPAK - IPAK STripFET V Power MOSFET Preliminary Data Features Type VDSS RDS on max ID 70N2LH5 25 V 0.0071 Ω 48 A 70N2LH5 25 V 0.0075 Ω 48 A 3 3 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)