70B25 Search Results

LM35N

Contextual Info: PERFORMANCE SEM ICO NDUCTOR SOE * • 70b2517 GGOlfibfi 7bT M P S C P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS ■ W 7$ FEATURES ■ Full CMOS, 6T Cell 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times

1s34

Abstract: P4C198 P4C1981 P4C1981L P4C1982L
Contextual Info: PERFORMANCE SEMICONDUCTOR SOE * • 70b2517 GGOlfibfi 7bT M P S C P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS ■ W 7$ FEATURES ■ Full CMOS, 6T Cell 5V ± 10% Power Supply ■ High Speed Equal Access and Cycle Times - l2/l5/20/25ns (Commercial)

29818

Contextual Info: PERFORMANCE SEMICONDUCTOR 2QE D 70b25T7 QQQl S'm 7 P39PCT818A/B HIGH SPEED DIAGNOSTIC SCAN REGISTERS Xr FEATURES • ■ ■ ■ ■ ■ Functionally Equivalent to Bipolar 29818 Type Devices ■ Low Power Operation ■ Fully TTL Compatible Inputs ■ Produced with PACE Technology

1S26

Abstract: P4C116 P4C116L AD5e
Contextual Info: PERFORMANCE SEMICONDUCTOR SDE V • 7 0 b 2 5 cl7 0001780 3äb * P S C P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS SCRAMS FEATURES ■ Full CMOS, 6T Cell Single 5V±10% Power Supply ■ High Speed (Equal Access and Cycle Times) -12,15/20/25/35 ns (Commercial)

29pct52

Contextual Info: PERFORMANCE SEMICONDUCTOR SOE » TotEST? oomoas? P29PCT52A/B P29PCT53A/B OCTAL REGISTERED TRANSCEIVER t • IPHEILOIMDIMÄI^Y T - Z X - 3/ -FEATURES ■ E q u iv a le n t to A m 2 9 5 2 /5 2 In p in o u t a n d fu n c tio n

Contextual Info: PERFORMANCE SEMICONDUCTOR 50E t • 70t2S= 7 0000743 S ■ P54/74PCT299/A 8-INPUT UNIVERSAL SHIFT REGISTER pbelomomairv - , - FEATURES ■ 8-Input Universal Shift Register ■ Fully TTL Compatible Input and Output Levels ■ Full CMOS Implementation ■ Produced with PACE Technology

811CE

Abstract: J300 J400 P300 P4C1024
Contextual Info: P4C1024 HIGH SPEED 128K x 8 CMOS STATIC RAM FEATURES • High Speed Equal Access and Cycle Times — 15/17/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) ■ Single 5 Volts+10% Power Supply ■ Easy Memory Expansion Using CE, CE2 and OE Inputs

mpsc 07

Abstract: P4C147
Contextual Info: PERFORMANCE SEMI CONDUCTOR SOE D • 7 0 b 2 5 t17 P4C147 ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAMS SCRAMS 0001766 / b77 ■ PSC - Z 3 - Ö S " FEATURES ■ Full CMOS, 6T Cell Single Power Supply - 5V +10% ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial)

Contextual Info: P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell 5V ± 1 0 % Power Supply High Speed Equal Access and Cycle Times -1 0 /1 2 /1 5 /2 0 /2 5 ns (Commercial) -12/1 5 /2 0 /2 5 /3 5 ns (Industrial) -15 /2 0 /2 5 /3 5 /4 5 ns (Military)

pace1750

Abstract: 11 ak 30 a4 edc5 P1753 IB10 PACE1753 PACE1754
Contextual Info: PERFORMANCE SEMICON DU CT OR 50E I • VObEST? DGDlb^G 34>4 * P S C PACE1753 SINGLE CHIP, 40MHz CMOS MMU/COMBO * r - FEATURES ■ — Illegal address error detection— program m able

P4C198

Abstract: P4C1981 P4C1981L P4C1982L
Contextual Info: P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES • Full CMOS, 6T Cell 5V ±10% Power Supply ■ High Speed Equal Access and Cycle Times -10/12/15/20/25 ns (Commercial) -12/15/20/25/35 ns (Industrial) -15/20/25/35/45 ns (Military)

P4C174

Contextual Info: P4C174 HIGH SPEED 8K x 8 CACHE TAG STATIC RAM j * - - FEATURES • High Speed Address-To-Match - 8 ns Maximum Access Time ■ Data Retention at 2V for Battery Backup Operation ■ Advanced CMOS Technology

P4C198

Abstract: P4C198A
Contextual Info: PE R F O R M A N C E SEMICONDUCTOR SÜE D • TDbSS'i? Ü Ü D 1 Û S Ô AID « P S C P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS SCRAMS 7^ v 6 ^ 3 - t FEATURES I Data Retention, 10 pA Typical Current from 2.0V P4C198L/198AL (Military)

A7153

Contextual Info: P E R F O R MA N C E SEMI CONDUCTOR 50E D • TOhEST? 0001230 P3C3164 SUPER FAST 8K X 8 STATIC CMOS RAMS SCRAMS 3 ■ PIRHLBIMIBMA1V ^ _ ■ 2$ - FEATURES ■ Single 3.3V + 0.2V Pow er Supply fo r High Speed w ith Low Noise and Low Pow er Dissipation ■

Contextual Info: Integrated Device Technology, Inc. IDT70825S/L HIGH SPEED 128K 8K X 16 BIT SEQUENTIAL ACCESS RANDOM ACCESS MEMORY (SARAM ) FEATURES: DESCRIPTION: • 8K x 16 Sequential Access Random Access Memory (SARAM™) Th e ID T 7 082 5 is a high-speed 8K x 16bit Sequential

P4C188

Abstract: P4C188L
Contextual Info: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS 7$- FEATURES • Full CMOS, 6T Cell ■ Single 5V±10% Power Supply ■ High Speed Equal Access and Cycle Times

d 1548

Abstract: K 1548 P4C1298 CEFH1
Contextual Info: PERFORMANCE SEMICONDUCTOR 20E D • 70^55*17 OOGObS? 1 ■ P4C1298/P4C1298L, P4C1299/P4C1299L ULTRA HIGH SPEED 64K x 4 STATIC CMOS RAMS SCRAMS 7$ T FEATURES ■ High Speed (Equal A ccess and Cycle Times) - 20/25/30/35 ns (Commercial) - 25/30/35/45/55 ns (Military)

MPS 2112

Abstract: dd1555 R3000A PR2000 PR31 MIPS R2000 PR3010A PR3000A td70c R2000 mips processor
Contextual Info: PE R FO R M A N CE SEMICONDUCTOR 50E D 7 0 b 2 S li 7 • ÜDD1SS1 PERFORMANCE INTEGRATED MIPS MODULE PIMM" 713 «PSC PffiEBJIIlflDNAIHIV FEATURES: ■ Single VLSI muttichip module contains: • PR3000A CPU • PR3010A FPA • PR3100A Write/Read and Parity Buffer

P4C148

Abstract: P4C149
Contextual Info: P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS FEATURES • Full CMOS, 6T Cell Two Options - P4C148 Low Power Standby Mode - P4C149 Fast Chip Select Control ■ High Speed Equal Access and Cycle Times -10/12/15/20/25 ns (Commercial) - 15/20/25/35 ns (P4C148 Military)

Contextual Info: P4C422 ULTRA HIGH SPEED 256 x 4 STATIC CMOS RAM * - FEATURES • High Speed Equal Access and Cycle Times -10/12/15/20/25/35 ns (Commercial) - 15/20/25 /35 ns (Military) ■ CMOS for Low Power

5962-84036

Abstract: A77 smd DDD2554 P4C116 VHC 04 smd diode s4 2b
Contextual Info: P4C116 ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS - X} FEATURES • Full CMOS, 6T Ceil ■ Output Enable Control Function ■ High Speed Equal Access and Cycle Times -10/12/15/20/25/35 ns (Commercial)

Contextual Info: P4C1981 /P4C1981L, P4C1982/P4C1982L ULTRA HIGH SPEED 16K x 4 CMOS STATIC RAMS FEATURES • Full CMOS, 6T Cell 5V ±10% Power Supply ■ High Speed Equal Access and Cycle Times -10/12/15/20/25 ns (Commercial) -12/15/20/25/35 ns (Industrial) -15/20/25/35/45 ns (Military)

HIT 7070

Abstract: k1757
Contextual Info: PERFORMANCE SEMI CONDUCTOR SOE D • 70bBST7 000175b 32T ip PACE 1757M/ME PREÜMl COMPLETE EMBEDDED CPU SUBSYSTEM FEATURES Programmable address wait states. Implements complete MIL-STD-1750A ISA Including optional MMU, MFSR, and BPU functions. Sixteen levels of interrupts are provided per MIL-STD1750A. Interrupts can be either edge- or level-sensitive.

Contextual Info: PERFORMANCE SEI1ICONDUCTÔR SOE D TObSST? QGG17bfl ÔÔT IPSC P4C422 ULTRA HIGH SPEED 256 x 4 CMOS STATIC RAM FEATURES • Fast Access Time —8,10,12,15, 25 ns Commercial —15, 20, 25 ns (Military) 5 V Power Supply ±10% for both commercial and military temperature ranges