P4C1024 Search Results

811CE

Abstract: J300 J400 P300 P4C1024
Contextual Info: P4C1024 HIGH SPEED 128K x 8 CMOS STATIC RAM FEATURES • High Speed Equal Access and Cycle Times — 15/17/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) ■ Single 5 Volts+10% Power Supply ■ Easy Memory Expansion Using CE, CE2 and OE Inputs

Contextual Info: P4C1024L LOW POWER 128K x 8 CMOS STATIC RAM FEATURES VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100µA/100µA Common Data I/O Access Times —55/70 (Commercial or Industrial) Fully TTL Compatible Inputs and Outputs Single 5 Volts ±10% Power Supply

J300

Abstract: J400 P300 P4C1024 P4C1024L
Contextual Info: P4C1024 HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM FEATURES High Speed Equal Access and Cycle Times — 15/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) — 20/25/35/45/55/70/85/100/120 ns (Military) Single 5 Volts ±10% Power Supply

P4C1024

Contextual Info: P4C1024 HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM FEATURES High Speed Equal Access and Cycle Times — 15/20/25/35 ns (Commercial/Industrial) — 20/25/35/45/55/70/85/100/120 ns (Military) Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and OE

Contextual Info: P4C1024L LOW POWER 128K x 8 CMOS STATIC RAM VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100µA/100µA Three-State Outputs Access Times —55/70 (Commercial or Industrial) Advanced CMOS Technology Single 5 Volts ±10% Power Supply

P4C1024

Contextual Info: P4C1024 MILITARY HIGH SPEED 128K x 8 CMOS STATIC RAM ADVANCE INFORMATION FEATURES High Speed Equal Access and Cycle Times — 20/25/35/45/55/70 ns Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and OE Inputs Common Data I/O Three-State Outputs

Contextual Info: P4C1024L LOW POWER 128K x 8 CMOS STATIC RAM xi-FEATURES • Vcc Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100nA/100nA ■ Access Times —55/70 (Commercial or Industrial) ■ Single 5 Volts ±10% Power Supply ■ Easy Memory Expansion Using CE, CE2 and

J300

Abstract: J400 P300 P4C1024 P4C1024L
Contextual Info: P4C1024 HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM FEATURES High Speed Equal Access and Cycle Times — 15/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) — 20/25/35/45/55/70/85/100/120 ns (Military) Single 5 Volts ±10% Power Supply

P4C1024L-70P/LF

Contextual Info: P4C1024L LOW POWER 128K x 8 CMOS STATIC RAM VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 50µA/50µA Three-State Outputs Access Times —55/70 (Commercial or Industrial) Advanced CMOS Technology Single 5 Volts ±10% Power Supply

P4C1024L

Abstract: P600
Contextual Info: P4C1024L LOW POWER 128K x 8 CMOS STATIC RAM FEATURES VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100µA/100µA Common Data I/O Access Times —55/70 (Commercial or Industrial) Fully TTL Compatible Inputs and Outputs Single 5 Volts ±10% Power Supply

Contextual Info: P4C1024L LOW POWER 128K x 8 CMOS STATIC RAM FEATURES VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100 A/100μA Common Data I/O Access Times —55/70 (Commercial or Industrial) Fully TTL Compatible Inputs and Outputs Single 5 Volts ±10% Power Supply

ce1 158

Abstract: P4C1024L P600
Contextual Info: P4C1024L P4C1024L LOW POWER 128K x 8 CMOS STATIC RAM FEATURES VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100µA/100µA Access Times —55/70 (Commercial or Industrial) Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and

Contextual Info: P4C1024 MILITARY HIGH SPEED 128K x 8 CMOS STATIC RAM ADVANCE INFORMATION ^-FEATURES • High Speed Equal Access and Cycle Times — 20/25/35/45/55/70 ns ■ Single 5 Volts ±10% Power Supply ■ Easy Memory Expansion Using CC, CE2 and

Contextual Info: P4C1024 HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM FEATURES High Speed Equal Access and Cycle Times — 15/20/25/35 ns (Commercial/Industrial) — 20/25/35/45/55/70/85/100/120 ns (Military) Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and OE

Contextual Info: P4C1024 HIGH SPEED 128K x 8 CMOS STATIC RAM -FEATURES • High Speed Equal Access and Cycle Times — 15/17/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) ■ Single 5 Volts ±10% Power Supply ■ Easy Memory Expansion Using ÜÊ, CE2 and

P4C1024L

Abstract: P600
Contextual Info: P4C1024L LOW POWER 128K x 8 CMOS STATIC RAM VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 50µA/50µA Three-State Outputs Access Times —55/70 (Commercial or Industrial) Advanced CMOS Technology Single 5 Volts ±10% Power Supply

P4C1024L

Abstract: P600
Contextual Info: P4C1024L LOW POWER 128K x 8 CMOS STATIC RAM FEATURES • Vcc Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100|iA/1 OOliA ■ Access Times — 55/70 (Commercial or Industrial) ■ Single 5 Volts ±10% Power Supply ■ Easy Memory Expansion Using CE, CE2 and

Contextual Info: P4C1024 HIGH SPEED 128K x 8 DUAL CHIP ENABLE CMOS STATIC RAM FEATURES High Speed Equal Access and Cycle Times — 15/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) — 20/25/35/45/55/70/85/100/120 ns (Military) Single 5 Volts ±10% Power Supply

Contextual Info: P4C1024L LOW POWER 128K x 8 CMOS STATIC RAM FEATURES VCC Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100µA/100µA Common Data I/O Access Times —55/70 (Commercial or Industrial) Fully TTL Compatible Inputs and Outputs Single 5 Volts ±10% Power Supply

J300

Abstract: J400 P300 P4C1024
Contextual Info: P4C1024 P4C1024 HIGH SPEED 128K x 8 CMOS STATIC RAM FEATURES High Speed Equal Access and Cycle Times — 15/17/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) Single 5 Volts ±10% Power Supply Easy Memory Expansion Using CE1, CE2 and OE Inputs Common Data I/O

Contextual Info: P4C1024L LOW POWER 128K x 8 CMOS STATIC RAM FEATURES • Vcc Current Commercial/Industrial — Operating: 70mA/85mA — CMOS Standby: 100|xA/100|iA ■ Access Times —55/70 (Commercial or Industrial) ■ Single 5 Volts +10% Power Supply ■ Easy Memory Expansion Using CE, CE2 and

Contextual Info: P4C1024 HIGH SPEED 128K x 8 CMOS STATIC RAM x i- FEATURES • High Speed Equal Access and Cycle Times — 15/17/20/25/35 ns (Commercial) — 20/25/35/45 ns (Industrial) ■ Single 5 Volts ±10% Power Supply

MMDJ-65608EV-30MQ

Abstract: 5962-8959804MUA QP7C1009B-20DMB 5962-89598 EDI88128LPS70LB PDM41024S20L32 5962-8959824 PDM41024S45TC a3021 EDI88128CS85ZB
Contextual Info: REVISIONS LTR DESCRIPTION H Add device type 41. Make corrections to case outline N, dimension b. Add vendor CAGE 65786 as source of supply for device type 41. Update boilerplate. Editorial changes throughout. 97-03-26 Raymond Monnin J Add device types 42, 43, 44, 45, and 46. Editorial changes to pages

mn4117405

Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
Contextual Info: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE