70.2 SOT23 Search Results

W1p TRANSISTOR

Abstract: transistor w1P SOT23 W1P w1p npn "W1P" W1P 65 transistor W1P 66 transistor W1p 69 BFT92 W1P 06
Contextual Info: P hilips S em iconductors l i 7 1 1 0 f l2 b 0 0 ^^354 3 SÖ H IP H IN Product specification PNP 5 GHz wideband transistor DESCRIPTION ^ BFT92 PINNING PNP transistor in a plastic SOT23 envelope. DESCRIPTION PIN It is primarily intended or use In RF wideband amplifiers, such as in

transistor w1P

Abstract: W1p TRANSISTOR SOT23 W1P w1p npn "W1P" W1P 06 w1p 60 W1p 69 w1p 22 w1p code
Contextual Info: 71 1 0A 2 b 00tjT3S4 Philips S em iconductors 3Sfl B I P H I N Product specification PNP 5 GHz wideband transistor DESCRIPTION £ BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended or use in RF wideband amplifiers, such as in

transistor w1P

Abstract: W1p TRANSISTOR w1p 60 W1p 25 TRANSISTOR w1p npn w1p code w1p 42
Contextual Info: b b S 3 T 31 0 Q 2 S 3 6 B 7 7 H « A P X Philips Semiconductors N AMER PHILIPS/D ISCR ETE Product specification L 7 E 1 £ PNP 5 GHz wideband transistor DESCRIPTION BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF

W1p TRANSISTOR

Abstract: transistor w1P w1p npn SOT23 W1P W1P 59 transistor w1p 60 W1P 51 W1p 69 W1P 66 transistor W1P 50
Contextual Info: Philips Sem iconductors 1^53131 0025366 774 M A P X AMER P H I L I P S / D I S C R E T E Product specification b?E PNP 5 GHz wideband transistor DESCRIPTION ^ BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily Intended for use in RF

bfr106

Contextual Info: • D02S20D 23T « a p x Philips S e m i c o n d u c t o r s _ Product specification AMER PHILIPS/ DIS CRETE b?E NPN 5 GHz wideband transistor DESCRIPTION c BFR106 PINNING NPN silicon planar epitaxial transistor In a plastic SOT23

8115, transistor

Abstract: BFR106 0482 transistor SD-1H 702 P TRANSISTOR
Contextual Info: P hilipsSemiconducìors M 7 1 1 D fl2 b D O b ^ ltib EDÔ H P H IN Product specification NPN 5 GHz wideband transistor DESCRIPTION c BFR106 PINNING NFN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended for low noise, general RF applications.

BFR 965

Abstract: BFR 36.2 Transistor BFR sot 23 transistor 70.2 Q62702-F1315 sot-23 marking code 352 0482 transistor 0166 415 04 1 060 bfr 705
Contextual Info: NPN Silicon RF Transistor BFR 182 Preliminary Data ● For low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. ● fT = 8 GHz F = 1.2 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: Silicon Hyperabrupt Varactors for General Wide Band Applications EBAIpha CKV2020 Series exDKV6520 Series Features • Extremely High Frequency Operation ■ Capacitance Values of 20 pF to 200 pF at 4 Volts ■ Octave Tuning from 4 to 20 Volts ■ Linear Frequency vs Voltage Characteristics

702 TRANSISTOR npn

Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ BFR106 UBB773 transistor t 2180 IC 1496 function L7E transistor 22741 transistor s1p 8115, transistor
Contextual Info: m b b s a T a i □ d e s 2 d d 2 3 T « a p x P hilips S e m i c o n d u c t o r s _P ro d u c ^ p e c ific a tio n - N AnER PHILIPS/DISCRETE b?E D NPN 5 GHz wideband transistor ^ BFR106 PINNING

Contextual Info: 7 1 1 0 0 2 b O C I b ^m a Philips Sem iconductors 2T2 RHIN Product specification NPN 6 GHz wideband transistor FEATURES BFR93A PINNING PIN DESCRIPTION • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2 emitter • PNP complement is the BFT93.

transistor 667

Contextual Info: ^^53^31 0035133 404 APX Philips S em iconductors Product specification N AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES • L7E 1 e BFR93A PINNING PIN High power gain DESCRIPTION • Low noise figure • Very low intermodulation distortion 2

CD074

Contextual Info: bb53T31 D DES IS1! D01 Philips Semiconductors N AMER PHI LIP S/DISCRETE APX NPN 5 GHz wideband transistor FEATURES Product specification b7E D £ BFR92A PINNING PIN DESCRIPTION • High power gain • Low noise figure • Low Intermodulation distortion 1 base

BFR91 spice parameters

Abstract: BF 194 transistor Philips FA 261 equivalent transistor of bfr93a SOT23 R2P transistor BFR93A 993 395 pnp npn BFT93 L7E transistor BFR93A
Contextual Info: • bb53^31 0QB51fl2 MTM ■ APX Philips Semiconductors Product specification AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES BFR93A e PINNING PIN DESCRIPTION • High power gain • Low noise figure • Very low intermodulation distortion 2 emitter

DIN 1415-1

Abstract: philips for ic 7404 transistor gl 1117 433-2 npn transistor c 4106 017 545 71 32 02 702 TRANSISTOR npn BFR90A BFR92A BFT92
Contextual Info: • Philips Semiconductors bbS3T31 □DSSlS'l 001 H A P X N AUER PHILIPS/DISCRETE Product specification b7E D NPN 5 GHz wideband transistor FEATURES £= BFR92A PINNING PIN DESCRIPTION • High power gain • Low noise figure • Low Intermodulation distortion

NPN transistor SST 117

Contextual Info: Philips Sem iconductors ^ b b 5 3 ^31 0 Q 3 1 cI b tl 5M 7 M APX Product specification NPN 9 GHz wideband transistor ^ ^ FEATURES ^ BFR540 • N AMER PHILIPS/DISCRETE bTE D PINNING PIN DESCRIPTION • High power gain • Low noise figure • High transition frequency

J51-20

Abstract: BFR92 transistor
Contextual Info: BFR92 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features • High power gain • Low noise figure • High transition frequency C 3 2 1 1 B Applications RF amplifier up to GHz range specially for wide band antenna amplifier. 3 E 2 18822

BFR92

Abstract: silicon npn planar rf transistor sot 143 transistor bfr92
Contextual Info: BFR92 Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • High power gain Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC C 3 2 1 1 B 3 E 2

BFR92 transistor

Abstract: bfr92
Contextual Info: BFR92 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features • High power gain • Low noise figure • High transition frequency C 3 2 1 1 B Applications RF amplifier up to GHz range specially for wide band antenna amplifier. 3 E 2 18822

SOT23-6 MARKING AJ2

Contextual Info: BFR92 Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • High power gain Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC C 3 2 1 1 B 3 E 2

BFR92

Abstract: transistor bfr92
Contextual Info: BFR92 Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • High power gain Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC C 3 2 1 1 B 3 E 2

NPN transistor SST 117

Abstract: transistor npn Epitaxial Silicon SST 117 S 9018 H 331 transistor Transistor MJE 5331 bfr540 equivalent transistor 9018 NPN BFR505 BFR540 URA698 transistor bf 760
Contextual Info: P h iJ ip ^ e m lc o n d u c t o r ^ ^ ^ ^ ^ ^ b b 5 3 T 3 lD □ 3 n b^ SM7 M AP X Product specification NPN 9 GHz wideband transistor _ FEATURES ^ i N AUER BFR540 P H IL IP S /D IS C R E T E bTE PINNING • High power gain • Low noise figure PIN DESCRIPTION

interfacing 8051 with temperature sensor

Abstract: 8051 microcontroller code for measuring power factor coding for temperature sensor interface with 8051 MAX6575 temperature sensor interface with 8051 640T MAX6575H MAX6575HZUT MAX6575L MAX6575LZUT
Contextual Info: 19-1485; Rev 0; 4/99 SOT Temperature Sensor with Multidrop Single-Wire Digital Interface The MAX6575L/H is a low-cost, low-current temperature sensor with a single-wire digital interface. It features accuracy of ±3°C at +25°C, ±4.5°C at +85°C, and ±5°C

philips 4859

Contextual Info: Philips Semiconductors bbS3T31 D05SB11 D1S • APX N AMER PHILIPS/DISCRETE Product specification b?E D NPN 9 GHz wideband transistor FEATURES c BFR505 PINNING • High power gain PIN DESCRIPTION • Low noise figure Code: N30 • High transition frequency

transistor marking pb 6 sot-23

Abstract: BFS17A
Contextual Info: Not for new design, this product will be obsoleted soon BFS17A / BFS17AR / BFS17AW Vishay Semiconductors Silicon NPN Planar RF Transistor 1 SOT23 Features • • • • • Low noise figure High power gain e3 Small collector capacitance Lead Pb -free component