6V DC MOTOR IG 2200 19 Search Results

3 phase rectifier thyristor bridge

Abstract: modules diode/thyristor
Contextual Info: STD/SDT70 Thyristor-Diode Modules, Diode-Thyristor Modules Type STD/SDT70GK08 STD/SDT70GK12 STD/SDT70GK14 STD/SDT70GK16 STD/SDT70GK18 STD/SDT70GK20 STD/SDT70GK22 STD/SDT70GK24 Symbol VRSM VDSM V 900 1300 1500 1700 1900 2100 2300 2500 Test Conditions ITRMS, IFRMS TVJ=TVJM

M5 DIODE 22-35

Abstract: STT70 STT70GK08 STT70GK12 STT70GK14 STT70GK18
Contextual Info: STT70 Thyristor-Thyristor Modules Type STT70GK08 STT70GK12 STT70GK14 STT70GK16 STT70GK18 STT70GK20 STT70GK22 STT70GK24 Symbol VRSM VDSM V 900 1300 1500 1700 1900 2100 2300 2500 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine VRRM VDRM

STT100GK12

Abstract: "AC Motor" M5 DIODE 22-35 STT100 STT100GK08 STT100GK14
Contextual Info: STT100 Thyristor-Thyristor Modules Type STT100GK08 STT100GK12 STT100GK14 STT100GK16 STT100GK18 STT100GK20 STT100GK22 Symbol VRSM VDSM V 900 1300 1500 1700 1900 2100 2300 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine VRRM VDRM V 800

thyristor-diode

Abstract: SDT1001 Sdt-100
Contextual Info: STD/SDT100 Thyristor-Diode Modules, Diode-Thyristor Modules Type VRSM VDSM V STD/SDT100GK08 900 STD/SDT100GK12 1300 STD/SDT100GK14 1500 STD/SDT100GK16 1700 STD/SDT100GK18 1900 STD/SDT100GK20 2100 STD/SDT100GK22 2300 Symbol Test Conditions ITRMS, IFRMS TVJ=TVJM

M5 DIODE 22-35

Abstract: SSAC70 SSAC70GK08 SSAC70GK12 SSAC70GK14
Contextual Info: SSAC70 Solid State AC Controller Anti-Parallel Thyristor-Thyristor Modules Type SSAC70GK08 SSAC70GK12 SSAC70GK14 SSAC70GK16 SSAC70GK18 SSAC70GK20 SSAC70GK22 SSAC70GK24 Symbol VRSM VDSM V 900 1300 1500 1700 1900 2100 2300 2500 Test Conditions ITRMS, IFRMS TVJ=TVJM

3 phase rectifier thyristor bridge

Abstract: M5 DIODE 22-35 SSAC100 SSAC100GK08 SSAC100GK12 SSAC100GK14 Anti-Parallel Thyristor
Contextual Info: SSAC100 Solid State AC Controller Anti-Parallel Thyristor-Thyristor Modules Type SSAC100GK08 SSAC100GK12 SSAC100GK14 SSAC100GK16 SSAC100GK18 SSAC100GK20 SSAC100GK22 Symbol VRSM VDSM V 900 1300 1500 1700 1900 2100 2300 Test Conditions ITRMS, IFRMS TVJ=TVJM

Contextual Info: STT70GKxxB Thyristor-Thyristor Modules Type STT70GK08B STT70GK12B STT70GK14B STT70GK16B STT70GK18B STT70GK20B STT70GK22B STT70GK24B Symbol VRSM VDSM V 900 1300 1500 1700 1900 2100 2300 2500 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine

STT165GK22

Abstract: STT165GK16 STT165GK18 STT165 STT165GK08 STT165GK12 STT165GK14 VDR2
Contextual Info: STT165 Thyristor-Thyristor Modules Dimensions in mm 1mm=0.0394" Type STT165GK08 STT165GK12 STT165GK14 STT165GK16 STT165GK18 STT165GK20 STT165GK22 Symbol VRSM VDSM V 900 1300 1500 1700 1900 2100 2300 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine

Contextual Info: STT100GKxxB Thyristor-Thyristor Modules Type STT100GK08B STT100GK12B STT100GK14B STT100GK16B STT100GK18B STT100GK20B STT100GK22B Symbol VRSM VDSM V 900 1300 1500 1700 1900 2100 2300 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine VRRM

CR diode transient

Contextual Info: STD/SDT165 Thyristor-Diode Modules, Diode-Thyristor Modules Type VRSM VDSM V STD/SDT165GK08 900 STD/SDT165GK12 1300 STD/SDT165GK14 1500 STD/SDT165GK16 1700 STD/SDT165GK18 1900 STD/SDT165GK20 2100 STD/SDT165GK22 2300 Symbol Test Conditions ITRMS, IFRMS TVJ=TVJM

STT165GK12B

Abstract: STT165GK18B
Contextual Info: STT165GKxxB Thyristor-Thyristor Modules Type STT165GK08B STT165GK12B STT165GK14B STT165GK16B STT165GK18B STT165GK20B STT165GK22B Symbol VRSM VDSM V 900 1300 1500 1700 1900 2100 2300 Test Conditions ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine VRRM

Contextual Info: r Z J S G S -T H O M S O N TDA1151 MOTOR SPEED REGULATOR • E X C E L L E N T V E R S A T IL IT Y • H IG H O U T P U T C U R R E N T U P T O 800m A • L O W Q U IE S C E N T C U R R E N T • L O W R E F E R E N C E V O L T A G E (1 .2 V ) • EXC ELLEN T

FK18SM-10

Contextual Info: MITSUBISHI Nch POWER MOSFET FK18SM-10 HIGH-SPEED SWITCHING USE FK18SM-10 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr ¡VDSS . 500V

FK18SM-9

Abstract: 002 545 18 05
Contextual Info: MITSUBISHI Nch POWER MOSFET FK18SM-9 HIGH-SPEED SWITCHING USE FK18SM-9 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr ¡VDSS . 450V

GC20930

Abstract: 6v dc motor IG 2200 19
Contextual Info: SGS-THOMSON STP25N06 STP25N06FI IM N - CHANNEL EN H A N C EM EN T M ODE PO W ER M OS TR A N SISTO R TYPE STP25N06 STP25N06FI . . . . . . V dss RDSfon 60 V 60 V 0.07 0.07 Id a il 25 A 16 A AVALANCHE RUG G EDN ESS TEC HNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA AT 100°C

VMO 440

Abstract: 650-01F 1200NC VMO 550-01F ixys VMO 440 motor IG 2200 19 x 000 15 r
Contextual Info: MOSFET Modules Contents VDSS ID cont RDS(on)max max. TC = 25°C TC = 25°C V A mΩ Ω 100 590 2.1 VMO 550-01F C3-2 690 1.8 VMO 650-01F C3-4 85 25 85 25 200 TO 240 Page VMK 90-02 T2 C3-6 VMM 85-02F C3-10 1) C3-14 C3-18 450 4.6 VMO 450-02F 500 4.2 VMO 500-02F 2)

Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

120N20

Contextual Info: HiPerFET TM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

120N20

Contextual Info: HiPerFET TM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

120N20

Abstract: motor IG 2200 19 125OC ID104
Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

Contextual Info: HiPerFETTM Power MOSFETs IXFX 120N20 IXFK 120N20 VDSS ID25 RDS on Single MOSFET Die = 200 V = 120 A Ω = 17 mΩ trr ≤ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ

motor IG 2200 19 00001

Abstract: 6v dc motor IG 2200 19 VMO500-02F C150
Contextual Info: MegaMOSTMFET Module VMO 500-02F VDSS = 200 V ID25 = 500 A RDS on typ = 3.5 mW D N-Channel Enhancement Mode G S KS D KS S Symbol Conditions VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 10 kΩ 200 V VGS Continuous ±20 V VGSM Transient

213H

Contextual Info: TO SHIBA 2SK2886 TOSHIBA FIELD EFFECT TRANSISTOR SILICON IM CHANNEL MOS TYPE tt-M OSV 2SK2886 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATORS, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • • • • INDUSTRIAL APPLICATIONS Unit in mm

FK18SM-10

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog