6A10 EQUIVALENT Search Results
6A10 EQUIVALENT Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TMP89FM42UG | Toshiba Electronic Devices & Storage Corporation | 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80B | Datasheet | ||
| TMP89FM42LUG | Toshiba Electronic Devices & Storage Corporation | 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80B | Datasheet | ||
| TMP89FS28LFG | Toshiba Electronic Devices & Storage Corporation | 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP176-P-2020-0.40D | Datasheet | ||
| TMP89FS62BUG | Toshiba Electronic Devices & Storage Corporation | 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 | Datasheet | ||
| TMP89FM42KUG | Toshiba Electronic Devices & Storage Corporation | 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80B | Datasheet |
6A10 EQUIVALENT Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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6A10 DC
Abstract: 6A10 equivalent diode 6A4 6a10 DIODES 6A10 6a10 diode diode 6A10 6A05 6a1 datasheet 6a2 diode
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mil-std-202ds280096a10 dc6a10 equivalent+8 | |
DS28009
Abstract: 6A10 DC
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mil-std-202ds280096a10 dc | |
DIODES 6A10
Abstract: 6A6 equivalent 6A2 equivalent DIODES 6A05 DS28009 6A10 6A05
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j-std-020cmilstd-202ds28009diodes 6a10+5 | |
6A10 DCContextual Info: 6A05 - 6A10 6.0A SILICON RECTIFIER SPICE MODELS: 6A05 6A1 6A2 6A4 6A6 6A8 6A10 Features • · High Surge Current Capability Low Leakage and Forward Voltage Drop A A B Mechanical Data · · · · · C D Case: R-6, Molded Plastic Terminals: Axial Leads, Solderable per |
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mil-std-202ds280096a10 dc | |
6a10
Abstract: diode 6A4 6A2 equivalent 6A6-T 6A05 DIODES 6A10 6A05-T 6A2-T diode 6a6 6A10-T
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j-std-020cmil-std-202ds28009500/tape+11 | |
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Contextual Info: 6A05 - 6A10 VISHAY 6.0A SILICON RECTIFIER Features • • • High Surge Current Capability Low Leakage and Forward Voltage Drop The Plastic Case Carries UL Recognition 94V-0 R-6 — — A - - ► B — ► M - — A - - ► i 1 T |
OCR Scan |
mil-std-202ds280096a05-6a10 | |
6A05TContextual Info: 6A05 - 6A10 6.0A SILICON RECTIFIER Features • • • High Surge Current Capability Low Leakage and Forward Voltage Drop Lead Free Finish, RoHS Compliant Note 1 Mechanical Data • • • • • • • Case: R-6 Case Material: Molded Plastic. UL Flammability |
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j-std-020cmilstd-202ds280096a05t | |
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Contextual Info: 6A05 - 6A10 6.0A SILICON RECTIFIER POWER SEMICONDUCTOR Features • • • High Surge Current Capability Low Leakage and Forward Voltage Drop The Plastic Case Carries UL Recognition 94V-0 A A B Mechanical Data • • • • • C Case: R-6, Molded Plastic |
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mil-std-202ds280096a05-6a10 | |
ir 4427 cross reference
Abstract: DDFA free of IR sensors free download datasheet of IR sensors 6A10 Diodes Inc avalanche transistors DIODES 6A10 equivalent 6A4 zener 6a1 6A4-T
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j-std-020cmilstd-20223-may-2011ir 4427 cross reference+9 | |
6A05Contextual Info: 6A05 - 6A10 6.0A SILICON RECTIFIER Features • • • High Surge Current Capability Low Leakage and Forward Voltage Drop The Plastic Case Carries UL Recognition 94V-0 Mechanical Data_ • • • • • ~ r Case: R-6, Molded Plastic Terminals: Axial Leads, Solderable per |
OCR Scan |
mil-std-202ds280096a05-6a106a05 | |
6A05
Abstract: 6A10 equivalent
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mil-std-202symbo40ds280096a05+1 | |
6A05-6A10
Abstract: 6A05 6A2 equivalent
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OCR Scan |
mil-std-202ds280096a05-6a106a05+1 | |
DIODES 6A10
Abstract: 6a10 diode diode 6a4 diode, 6A05 6A05 6A05-T 6A10-T 6A05T 6A10 DS28009
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j-std-020cmilstd-202ds28009diodes 6a10+8 | |
transistor C 4429 equivalent
Abstract: DIODES 6A10 6A10 Diodes Inc inverter driver bjt half bridge equivalent 6A4 free download datasheet of IR sensors
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j-std-020cmilstd-20218-may-2011transistor c 4429 equivalent+5 | |
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BA159 equivalent
Abstract: B80C1500-1000 BYS26-45 equivalent sb5100 B380C2000/1500 1N5048 BYX55-350 BYS21-45 BYX55-600 SMB358
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1a01/g1a02/g1a03/g1a04/g+14 | |
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Contextual Info: O K I semiconductor MSM51C256A 262,144-Word x 1-Bit DYNAMIC RAM G EN E R A L DESCRIPTION T h e M S M 5 1 C 2 5 6 A is a new generation dynam ic R A M org an ized a s 262,144-w ord x 1-bit. T h e technology u sed to fabricate the M S M 5 1 C 2 5 6 A is O K I’s C O M S silicon gate p ro c e ss tech |
OCR Scan |
msm51c256a144-word144-w51c256a-7lid | |
CAT7105CA
Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
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5ce120c5ke120ca5ce120ca5ce12a+14 | |
MUR1560 equivalent
Abstract: 1N4936 equivalent MUR1100E equivalent 1N5404 equivalent MUR620CT equivalent mur420 equivalent MUR1620CT equivalent BYV19-45 MUR1660CT equivalent MUR1520 equivalent
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mr852vhe1401vhe1402vhe1403+13 | |
SMD MARKING q2 jp
Abstract: ske3 3H DIODE smd smd diode BEE GA1088 GA1088-MC500 GA1088-MC700 MC500 MC700 ske 435 diode
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OCR Scan |
ga1088smd marking q2 jpske33h diode smd+6 | |
STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
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100-upstk442-130m56730asppac011a+7 | |
5D-13
Abstract: 5D14 chip Marking 3A0 7B12
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mach5-512/mach5lv-512mach5-512/120-7/10/12/15mach5-512/192-7/10/12/15mach5lv-512/160-7/10/12/15+10 | |
5D-13
Abstract: 6a7 Marking cadence leapfrog O223 6b14
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mach5-512/mach5lv-512mach5-512/120-7/10/12/15mach5-512/192-7/10/12/15mach5lv-512/160-7/10/12/15+11 | |
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Contextual Info: cv V A N A I M A M D T FINAL C 0M 'L:-7/10/12/15 IND:-10/12/15/20 M A C H 5 -5 1 2 /M A C H 5 L V -5 1 2 I S C O M P A N Y MACH5-51 2/1 20-7/10/1 2/1 5 MACH5-512/192-7/10/12/15 MACH5-512/160-7/10/12/15 MACH5-512/256-7/10/12/15 MACH5-512/184-7/10/12/15 MACH5LV-512/120-7/10/12/15 |
OCR Scan |
mach5-51mach5-512/160-7/10/12/15mach5-512/192-7/10/12/15mach5-512/256-7/10/12/15+6 | |
mur1650
Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
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mbrb1045vhe205vhe210vhe215+16 | |