68257B Search Results

KM68257Bp-20

Abstract: KM68257BP20 KM68257BP KM68257BP-25 KM68257BP-15 KM68257BJ25 KM68257BJ20 328-pin km68257bj KM68257
Contextual Info: 68257B CMOS SRAM 3 2 K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS): 2mA (max) Operating K M 68257BP/J-15: 150mA (max.) 68257BP/J-20: 140mA (max.)

KM68257B-20

Abstract: KM68257bl
Contextual Info: CMOS SRAM 68257B/BL 32 K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max • Low Power Dissipation Standby (TTL) : 40m A (max.) (C M O S ): 100,aA(Max.) L-Ver 2mA(Max.) Operating KM 68257B /B L-15:150m A (Max.)

Contextual Info: 68257B CMOS SRAM 32K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max • Low Power Dissipation Standby (TTL) : 40mA (max.) 2mA(Max.) Operating 68257B-15 : 150mA (max.) 68257B-20: 140mA (max.) 68257B-25: 130mA (max.)

23C1001

Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

KM68257BP

Abstract: KM68257Bp-20 KM68257BJ25
Contextual Info: PRELIMINARY 68257B CMOS SRAM 3 2 K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25ns max • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS): 2mA (max) Operating 68257BP/J-15: 150mA (max.) 68257BP/J-20: 140m A (max.)

Contextual Info: PRELIMINARY 68257B CMOS SRAM 3 2 K X 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 1S, 20, 25ns max • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS): 2mA (max) Operating KM6S2S7BPfJ-15: 150mA (max.) 68257BP/J-20: 140mA (max.)

KM28C64A

Contextual Info: TABLE OF COm-ENTS FUNCTION GUIDE 1. 2. 3. 4. Introduction. 11 Product G uide. 19

KM68257bl

Contextual Info: 68257BL CMOS SRAM 32,768 WORD x 8 Bit High Speed CMOS Static RAM FEATURES • Fast A cc e s s Tim e: 15, 20, 25n s m ax. • Low Pow er D issipation S tandb y (TTL) : 30m A (m ax.) (C M O S ): 100pA (m ax.) O p e ra tin g K M 6 8 2 5 7 B L P /J -1 5: 1 5 0 m A (m a x .)

PE 8001A

Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1