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Eaton Bussmann


Eaton Bussmann BK-S506-800MA FUSE GLASS 800MA 250VAC 5X20MM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BK-S506-800MA	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Eaton Bussmann S506-800MA (S506 SERIES) Fuse, Antisurge, 800Ma; Blow Characteristic:Time Delay; Fuse Current:800Ma; Voltage Rating Vac:250V; Fuse Size Metric:5Mm X 20Mm; Fuse Size Imperial:-; Product Range:S506 Series; Breaking Capacity Current Ac:35A; Svhc:No Svhc Rohs Compliant: Yes \|Eaton Bussmann S506-800MA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	S506-800MA (S506 SERIES)	Bulk	92		10	1 - 10 $0.24 100 $0.22 1000 $0.15 10000 $0.15	Buy Now
Eaton Bussmann S506-800MA-R S506 800Ma Buss Fuse/ Bulk Rohs Compliant: Yes \|Eaton Bussmann S506-800MA-R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	S506-800MA-R	Bulk			5	1 $6.10 10 $5.76 100 $4.31 1000 $3.68 10000 $3.68	Buy Now

6800MA Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NR10050 Contextual Info: Spec Sheet INDUCTORS SMD Power Inductors NR10050T3R8N Features Item Summary 3.8 H ±30% , 7300mA, 6800mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions -/10050 L 10mm ±0.3	Original	NR10050T3R8N 7300mA, 6800mA 500pcs 100kHz 7300mA 26MHz NR10050	PDF
Contextual Info: Spec Sheet INDUCTORS SMD Power Inductors NR10050T3R8N Features Item Summary 3.8 H ±30% , 7300mA, 6800mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions -/10050 L 10mm ±0.3	Original	NR10050T3R8N 7300mA, 6800mA 500pcs 100kHz 7300mA 26MHz	PDF
Contextual Info: FLM4450-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM4450-25F -46dBc FLM4450-25F	PDF
Contextual Info: FLM3742-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 41% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM3742-25F -46dBc FLM3742-25F	PDF
Contextual Info: FLM3742-25DA F, ¿¡U-,. r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idB = 44dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz	OCR Scan	FLM3742-25DA UJ11jU 44dBm -45dBc 32dBm	PDF
Contextual Info: FLM4450-25F - C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 44.5dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm	OCR Scan	FLM4450-25F -46dBc FLM4450-25F FCSI0499M200	PDF
FLM4450-25D Abstract: FUJI GaAs FET 25Q 328 FLM4450-25DA Contextual Info: n FLM4450-25DA Internally Matched Power GaAs F E Ts . I FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 9.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM4450-25DA 44dBm -45dBc 32dBm FLM4450-25DA FLM4450-25D FUJI GaAs FET 25Q 328	PDF
FLM5359-25F Contextual Info: FLM5359-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM5359-25F -46dBc FLM5359-25F Pow4888	PDF
Contextual Info: FLM5359-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: hadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50W	Original	FLM5359-25F -46dBc FLM5359-25F FCSI0499M200	PDF
FLM4450-25F Contextual Info: FLM4450-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: hadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50W	Original	FLM4450-25F -46dBc FLM4450-25F FCSI0499M200	PDF
FLM5359-25F Contextual Info: FLM5359-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM5359-25F -46dBc FLM5359-25F FCSI0499M200	PDF
FLM5359-25F Contextual Info: FLM5359-25F C-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 44.5dBm Typ. • • • • • High Gain: G ^ b = 8.5dB (Typ.) High PAE: r!add = 39% (Typ.) Low IM 3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	-46dBc FLM5359-25F FLM5359-25F FCSI0499M200	PDF
CGR18650hm Abstract: CR2032 panasonic MSDS MH12210 li-ion CGR18650 MH12210 CGR18650 ce bp-748264 GP AA alkaline battery panasonic 18650 BP-5511c4 Contextual Info: Chemistry Home Products ISO Sales Offices Production Environment Alkaline Lithium Lithium Ion Nickel Cadmium Nickel Metal Hydride Sealed Lead-Acid Lead Acid VRLA Modular Other Products MSDS About Us Search by Model Number Alkaline Home Products ISO Sales Offices	Original		PDF
Contextual Info: FLM5053-25F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 44.5dBm Typ. • High Gain: G1dB = 8.5dB (Typ.) • High PAE: hadd = 39% (Typ.) • Low IM3 = -46dBc@Po = 33.5dBm • Broad Band: 5.0 to 5.3GHz • Impedance Matched Zin/Zout = 50ohm	Original	FLM5053-25F -46dBc 50ohm FLM5053-25F 25deg	PDF

Contextual Info: FLM3742-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 44.5dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: riadd = 41% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM3742-25F -46dBc 3742-25F FCSI0499M200	PDF
Contextual Info: FLM 6472-25DA Internally M a tch ed Power GaAs FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 93.7 w °C °C Limit Typ. Max. Unit Total Power Dissipation	OCR Scan	6472-25DA	PDF
BPL40-12 Contextual Info: Maintenance-Free Rechargeable Sealed Lead-Acid Battery BPL40-12 The battery is constructed by plates, separators, safety valves and container. Since the electrolyte is held by a glassmat separator and plates, the battery can use in any direction and position	Original	BPL40-12 2000mA 50volts) 3800mA BPL40-12	PDF
Contextual Info: FLM3439-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 41% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 3.4 ~ 3.9GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM3439-25F -46dBc FLM3439-25F	PDF
ik 937 Abstract: FET 4900 FLM4450-25F 3485 fujitsu Contextual Info: FLM4450-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM4450-25F -46dBc FLM4450-25F ik 937 FET 4900 3485 fujitsu	PDF
Contextual Info: FLM4450-25F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 44.5dBm Typ. • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 40% (Typ.) • Low IM3 = -46dBc@Po = 33.5dBm • Broad Band: 4.4 to 5.0GHz • Impedance Matched Zin/Zout = 50ohm	Original	FLM4450-25F -46dBc 50ohm FLM4450-25F 25deg	PDF
FLM3742-25DA Contextual Info: F\|J ,. FLM3742-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G -j^B = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM 3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM3742-25DA 44dBm -45dBc 32dBm FLM3742-25DA	PDF
FLM5359-25F Contextual Info: FLM5359-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM5359-25F -46dBc FLM5359-25F Powe4888	PDF
FLM5053-25F Contextual Info: FLM5053-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.0 ~ 5.3GHz Impedance Matched Zin/Zout = 50Ω	Original	FLM5053-25F -46dBc FLM5053-25F Pow4888	PDF
FLM4450-25DA Abstract: FLM4450-25D Contextual Info: F, . FLM4450-25DA r UJ11 j U Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: r!add = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q	OCR Scan	FLM4450-25DA 44dBm -45dBc 32dBm FLM4450-25DA FLM4450-25D	PDF

6800MA Search Results

6800MA Price and Stock

Eaton Bussmann BK-S506-800MA

Eaton Bussmann S506-800MA (S506 SERIES)

Eaton Bussmann S506-800MA-R

6800MA Datasheets Context Search

NR10050

FLM4450-25D

FLM5359-25F

FLM4450-25F

FLM5359-25F

FLM5359-25F

CGR18650hm

BPL40-12

ik 937

FLM3742-25DA

FLM5359-25F

FLM5053-25F

FLM4450-25DA