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    6800MA Price and Stock

    Eaton Bussmann

    Eaton Bussmann S506-800MA

    Fuse, Antisurge, 800Ma; |Eaton Bussmann S506-800MA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark S506-800MA Bulk 1
    • 1 $0.26
    • 10 $0.26
    • 100 $0.21
    • 1000 $0.17
    • 10000 $0.14
    		Buy Now

    Eaton Bussmann S506-800MA-R

    S506 800Ma Buss Fuse/ Bulk; |Eaton Bussmann S506-800MA-R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark S506-800MA-R Bulk 5
    • 1 -
    • 10 $12.10
    • 100 $8.77
    • 1000 $7.26
    • 10000 $7.26
    		Buy Now

    6800MA Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NR10050

    Contextual Info: Spec Sheet INDUCTORS SMD Power Inductors NR10050T3R8N Features Item Summary 3.8 H ±30% , 7300mA, 6800mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions -/10050 L 10mm ±0.3


    Original     		nr10050t3r8n7300ma6800ma500pcs+3100khz26mhznr10050 PDF

    Contextual Info: Spec Sheet INDUCTORS SMD Power Inductors NR10050T3R8N Features Item Summary 3.8 H ±30% , 7300mA, 6800mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 500pcs Products characteristics table External Dimensions -/10050 L 10mm ±0.3


    Original     		nr10050t3r8n7300ma6800ma500pcs+2100khz26mhz PDF

    Contextual Info: FLM4450-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Ω


    Original     		flm4450-25f-46dbc PDF

    Contextual Info: FLM3742-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 41% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Ω


    Original     		flm3742-25f-46dbc PDF

    Contextual Info: FLM3742-25DA F, ¿¡U-,. r UJ11jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idB = 44dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz


    OCR Scan     		flm3742-25dauj11ju44dbm-45dbc+132dbm PDF

    Contextual Info: FLM4450-25F - C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 44.5dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm


    OCR Scan     		flm4450-25f-46dbcfcsi0499m200 PDF

    FLM4450-25D

    Abstract: FUJI GaAs FET 25Q 328 FLM4450-25DA
    Contextual Info: n FLM4450-25DA Internally Matched Power GaAs F E Ts . I FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G-j^B = 9.5dB (Typ.) High PAE: riadd = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		flm4450-25da44dbm-45dbc32dbm+3flm4450-25dfuji gaas fet25q 328 PDF

    FLM5359-25F

    Contextual Info: FLM5359-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		flm5359-25f-46dbcpow4888 PDF

    Contextual Info: FLM5359-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: hadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50W


    Original     		flm5359-25f-46dbcfcsi0499m200 PDF

    FLM4450-25F

    Contextual Info: FLM4450-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: hadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50W


    Original     		flm4450-25f-46dbcfcsi0499m200 PDF

    FLM5359-25F

    Contextual Info: FLM5359-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		flm5359-25f-46dbcfcsi0499m200 PDF

    FLM5359-25F

    Contextual Info: FLM5359-25F C-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 44.5dBm Typ. • • • • • High Gain: G ^ b = 8.5dB (Typ.) High PAE: r!add = 39% (Typ.) Low IM 3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		-46dbcflm5359-25ffcsi0499m200 PDF

    CGR18650hm

    Abstract: CR2032 panasonic MSDS MH12210 li-ion CGR18650 MH12210 CGR18650 ce bp-748264 GP AA alkaline battery panasonic 18650 BP-5511c4
    Contextual Info: Chemistry Home Products ISO Sales Offices Production Environment Alkaline Lithium Lithium Ion Nickel Cadmium Nickel Metal Hydride Sealed Lead-Acid Lead Acid VRLA Modular Other Products MSDS About Us Search by Model Number Alkaline Home Products ISO Sales Offices


    Original     		cgr18650hmcr2032 panasonic msdsmh12210 li-ioncgr18650+6mh12210cgr18650 cebp-748264gp aa alkaline batterypanasonic 18650bp-5511c4 PDF

    Contextual Info: FLM5053-25F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 44.5dBm Typ. • High Gain: G1dB = 8.5dB (Typ.) • High PAE: hadd = 39% (Typ.) • Low IM3 = -46dBc@Po = 33.5dBm • Broad Band: 5.0 to 5.3GHz • Impedance Matched Zin/Zout = 50ohm


    Original     		flm5053-25f-46dbc50ohm25deg PDF

    Contextual Info: FLM3742-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 44.5dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: riadd = 41% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		flm3742-25f-46dbc3742-25ffcsi0499m200 PDF

    Contextual Info: FLM 6472-25DA Internally M a tch ed Power GaAs FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage VGS -5 V 93.7 w °C °C Limit Typ. Max. Unit Total Power Dissipation


    OCR Scan     		6472-25da PDF

    BPL40-12

    Contextual Info: Maintenance-Free Rechargeable Sealed Lead-Acid Battery BPL40-12 The battery is constructed by plates, separators, safety valves and container. Since the electrolyte is held by a glassmat separator and plates, the battery can use in any direction and position


    Original     		bpl40-122000ma50volts3800ma PDF

    Contextual Info: FLM3439-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 41% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 3.4 ~ 3.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		flm3439-25f-46dbc PDF

    ik 937

    Abstract: FET 4900 FLM4450-25F 3485 fujitsu
    Contextual Info: FLM4450-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 40% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Ω


    Original     		flm4450-25f-46dbcik 937fet 4900+13485 fujitsu PDF

    Contextual Info: FLM4450-25F C-Band Internally Matched FET FEATURES • High Output Power: P1dB = 44.5dBm Typ. • High Gain: G1dB = 9.5dB (Typ.) • High PAE: hadd = 40% (Typ.) • Low IM3 = -46dBc@Po = 33.5dBm • Broad Band: 4.4 to 5.0GHz • Impedance Matched Zin/Zout = 50ohm


    Original     		flm4450-25f-46dbc50ohm25deg PDF

    FLM3742-25DA

    Contextual Info: F|J ,. FLM3742-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 44dBm Typ. High Gain: G -j^B = 10.5dB (Typ.) High PAE: r iadd = 36% (Typ.) Low IM 3 = -45dBc@Po = 32dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		flm3742-25da44dbm-45dbc32dbm PDF

    FLM5359-25F

    Contextual Info: FLM5359-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Ω


    Original     		flm5359-25f-46dbcpowe4888 PDF

    FLM5053-25F

    Contextual Info: FLM5053-25F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 44.5dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 39% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 5.0 ~ 5.3GHz Impedance Matched Zin/Zout = 50Ω


    Original     		flm5053-25f-46dbcpow4888 PDF

    FLM4450-25DA

    Abstract: FLM4450-25D
    Contextual Info: F, . FLM4450-25DA r UJ11 j U Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: r!add = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q


    OCR Scan     		flm4450-25da44dbm-45dbc32dbm+1flm4450-25d PDF