67C401 Search Results

67C402

Abstract: IR 2153 67C401-10
Contextual Info: 67C401/13, 67C402/23 Advanced Micro Devices Low Density First-In First-Out FIFO 64 x 4, 64 x 5 CMOS Memory (Cascadable) DISTINCTIVE CHARACTERISTICS RAM-based architecture for short fall-through delay • Zero standby power ■ High-speed 15 MHz shift-in/shlfi-out rates

67C402

Contextual Info: a 67C401/13 67C402/23 First-In First-Out FIFO 64x4, 64x5 CMOS MEMORY Advanced Micro Devices 25/35 MHZ (Cascadable) FEATURES ORDERING INFORMATION 67 C 401 - 35 N • Zero standby power • High-tpeed 35-MHz shlft-ln/shlft-out rate* OPERATING — _ CONDITIONS

67c401

Abstract: MMI 67401 67c402 MMI+67401
Contextual Info: SiliconJusfaris SSI 6 7 C 4 0 1 /4 0 2 First-In First-Out FIFO 64x4 or 64x5 Memory INNOVATORS IN/INTEGRATION Preliminary Data Sheet GENERAL DESCRIPTION FEATURES The SSI 67C401/402 devices are high speed, expandable memories operating as a First-In, First-Out, (FIFO)

Contextual Info: First-In First-Out FIFO 6 4 x 4 ,6 4 x 5 Memory 1 0 / 1 5 MHz (Cascadable) CMOS 67C401 /1 3 6 7 C 4 0 2 /2 3 Ordering Information Features '• • Zero standby power PART NUMBER PKG • Very low active power consumption 67C401-10 N,J Com Totem Pole 10 MHz 64x4

67C4023

Contextual Info: First-In First-Out FIFO 64x4, 64x5 Memory 1 0 /15 MHz (Cascadable) CMOS Features 67C401/13 67C402/23 Ordering Information • Zero standby power • High-speed 15-MHz shift-in/shift-out rates PART NUMBER PKG 67C401-10 67C401-15 TEMP OUTPUT DESCRIPTION N,J,NL

67c401

Abstract: 67C4023 67C402 67C4023-15 67C402-10 67C401-10 67C4013 67C4023-10
Contextual Info: a 67C401/13, 67C402/23 Advanced Micro Devices Low Density First-In First-Out FIFO 64 x 4, 64 x 5 CMOS Memory (Cascadable) DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ RAM-based architecture for short fall-through delay Full CMOS cell for maximum noise Immunity

am67c401

Abstract: AM67C401-15
Contextual Info: 67C401/13 67C402/23 First-In First-Out FIFO 64 x 4, 64 x 5 CMOS MEMORY (Cascadable) Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ Zero standby power High-speed 35-MHz shift-ln/shift-out rates ■ ■ Very low active power consumption TTL-compatfble Inputs and outputs

tp 2116

Contextual Info: ¿iliœnàiisfons SSI 6 7 C 4 0 1 /4 0 2 First-In First-Out FIFO 64x4 or 64x5 M em ory INNOVATORS IN/INTEGRATION Preliminary D ata Sheet GENERAL DESCRIPTION FEATURES The SSI 67C401/402 d e vice s are high speed, exp anda ble m e m orie s o p e ra tin g as a First-In, F irst-O ut, (FIFO)

67C402

Abstract: 64X4 67C4023
Contextual Info: 67C401/13 a 67C402/23 Advanced Micro Devices First-In First-Out FIFO 64x4, 64x5 Memory 10/15 MHz (Cascadable) CMOS Features Ordering Information • Zero tta n d b y power • High-speed 15-MHz shlft-in/shlft-ou t rales Part Num ber Package Temp O utput

Contextual Info: a 67C401/13, 67C402/23 Advanced Micro Devices Low Density First-In First-Out FIFO 64 x 4,64 x 5 CMOS Memory (Cascadable) DISTINCTIVE CHARACTERISTICS RAM-based architecture for short fall-through delay • Zero standby power ■ High-speed 15 MHz shift-ln/shift-out rates

Contextual Info: ADV MI CR O M EMORY MfiE J> DSS7S2Ö GOBCHBB T « A M D 4 T-46-35 67C401/13 67C402/23 First-In First-Out (FIFO) 64 x 4,64 x 5 CMOS MEMORY (Cascadable) Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ Zero standby power High-speed 35-MHz shlft-in/shlft-out rates

wf vqc 10d

Abstract: TGS 2201 SMD W2T TRANSISTOR SMD W2T 72 EX5962 MMI PAL14L8 C57401j tms 6011 MIMI Ti PROM programming procedure w2t smd
Contextual Info: 2 Specialty Memory Products 1988 Data Book Advanced Micro Devices Monolithic ryisn Memories UliTlU A W h o lly O w n e d S u b s id ia ry o f A d v a n c e d M ic r o D e vice s a Advanced Micro Devices Sp ecialty Memory Products Data Book/Handbook Introduction

AM4701

Abstract: AM7205A
Contextual Info: Section 6 S E C TIO N 6 C M O S F irs t-In F irst O ut FIFO M e m o rie s An Introduction to FIFO M em High Density FIFOs Am7200 256 x 9 with EF, FF, HF Flags . 6-5