65MA Search Results

Contextual Info: WJA1035 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • • Cascadable gain block 50 – 4000 MHz 15 dB Gain @ 1.9GHz +16.5 dBm P1dB @ 1.9GHz +35 dBm OIP3 @ 1.9GHz Operates from +5V @ 65mA • • • • Wireless Infrastructure

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CBC2518T681K Features Item Summary 680 H(±10%), 65mA, 60mA, 1007 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions

7segments

Abstract: IES5505 IES5501 IES5508 drive 7segments IES5507 IES5515 5508C 7 segment display driver
Contextual Info: IES5508 65mA 8-bit 2-wire Bus Output Port 1 3 FEATURES • 8 individually selectable open drain output ports The IES5508 is a monolithic CMOS integrated circuit for general purpose output drive configurable from a 2-wire bus interface including I2C-bus, SMBus, PMbus, and

14164 1994

Abstract: ERA-51SM 358-type 419V
Contextual Info: ERA-51SM Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: ERA-51SM Reference Data: RDF-1079D S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER = -20dBm, Icc = 65mA, Vd = 4.44V @Temperature = +25degC

GALI-59

Contextual Info: MMIC Amplifier GALI-59+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -20dBm, CURRENT = 65mA INPUT POWER = -20dBm, Temperature = +25°C 40 40 35 -45°C 35 52mA 30 +25°C 30 65mA 25 +85°C 25 78mA 20 dB (dB) 20 15 15 10 10

LEE-59

Contextual Info: MMIC Amplifier LEE-59+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -20dBm, CURRENT = 65mA INPUT POWER = -20dBm, Temperature = +25°C 40 40 35 -45°C 35 52mA 30 +25°C 30 65mA 25 +85°C 25 78mA 20 dB (dB) 20 15 15 10 10

GALI-5

Contextual Info: MMIC Amplifier GALI-5+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -20dBm, CURRENT = 65mA INPUT POWER = -20dBm, Temperature = +25°C 40 40 35 -45°C 35 52mA 30 +25°C 30 65mA 25 +85°C 25 78mA 20 dB (dB) 20 15 15 10 10

ERA-5

Abstract: era 5 mmic era-5
Contextual Info: MMIC Amplifier ERA-5+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -20dBm, CURRENT = 65mA INPUT POWER = -20dBm, Temperature = +25°C 22 22 20 -45°C 20 52mA 18 +25°C 18 65mA 16 +85°C 16 78mA 14 dB (dB) 14 12 12 10 10 8

GALI-51

Abstract: gali51
Contextual Info: MMIC Amplifier GALI-51+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -20dBm, CURRENT = 65mA INPUT POWER = -20dBm, Temperature = +25°C 40 40 35 -45°C 35 52mA 30 +25°C 30 65mA 25 +85°C 25 78mA 20 dB (dB) 20 15 15 10 10

ERA-51SM

Contextual Info: ERA-51SM+ MMIC Amplifier Typical Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions. Definitions: Input Return Loss = -S11 dB Gain(Power Gain) = S21 (dB) Reverse Isolation = -S12 (dB) Output Return Loss = -S22 (dB) TEST CONDITIONS: Icc = 65mA, Vd = 4.44V @Temperature = +25degC

10-PIN

Abstract: DFN-10 EL5228 EL5228IL EL5228IL-T13 LCD Gamma Buffers LCD VCOM
Contextual Info: EL5228 Data Sheet PRELIMINARY March 25, 2004 FN7368 VCOM with Dual Gamma Buffer Features The EL5228 integrates a high power VCOM amplifier with dual gamma reference voltage buffers. With 180mA peak and 65mA typical output current, the VCOM amplifier is

INDUCTOR 220uH

Abstract: 220UH 5A
Contextual Info: 1. M e c h a n ic a l D im e n s i o n s : 2. S c h e m a t i c : 2.5±0.2 X o = IIJ J —I O L .H 3. E l e c t r i c a l CM A I— 3 .2 Ì0 .3 S p e c if ic a t io n s :@ 2 5 ° C B 2.90 Max INDUCTANCE: 220uH ±20% @100KHz 0.1V IDC: 65mA DC RESISTANCE: 11.80 OHMS Maximum

SD1A210GW

Contextual Info: SD1A210GW SIDAC SIDAC High Voltage Silicon Bidirectional Thyristors 1 AMPERE RMS 220 VOLTS FEATURES •VBO range is from 201 to 219 Vdc •VDRM & VRRM with stand +/- 180V. •IH+/- is under 65mA. •Compact package for spacing saving. Application • Gas Igniters

Contextual Info: Part Number : 1030 Serial Number : WB T5 Lamps Base Wedge Base Base Type W2x4.6d Lamp Size inch T-1 1/2 Lamp size T5 Rating 14V 65mA Test Volts (V) 14 Current mA 65 Wattage (W) 0,9 Light Output (Lm) 1,9 Light output (mscp) 0,15 AC Life 16000 DC Life 16000

Contextual Info: V62C2162048L L Ultra Low Power 128K x 16 CMOS SRAM Features Functional Description • Low-power consumption - Active: 65mA ICC at 35ns - Stand-by: 10 µA (CMOS input/output) 2 µA (CMOS input/output, L version) The V62C2162048L is a Low Power CMOS Static

SNA-400

Abstract: SNA-476 Sirenza Microdevices, Inc SNA-486
Contextual Info: SNA-400 Product Description Sirenza Microdevices’ SNA-400 is a GaAs monolithic broadband amplifier MMIC in die form. This amplifier provides 13dB of gain when biased at 65mA and 5.0V. DC-8 GHz, Cascadable GaAs MMIC Amplifier External DC decoupling capacitors determine low frequency response. The use of an external resistor allows for bias flexibility

KFB6

Contextual Info: Cell Type KF-B650 Specifications Nominal Capacity Nominal Voltage W w L T 47.5 ±0.3 1.870 ±0.012 16.4 ±0.2 W 0.646 ±0.008 7.8 ±0.2 T 0.307 ±0.008 3.5 w 0.138 L Dimensions of Bare Cell mm inch mm inch mm inch mm inch 650mAh 1.2V Standard 65mA Charging Current

510K-620K

Abstract: 331J RC-855 RC855NP-1R2M RC855NP-1R5M RC855NP-3R6K
Contextual Info: POWER INDUCTORS < Pin Type: RC Series> Type:RC-855 ◆ Product Description ・8.3x5.7mm Max. L×W , 8.6mm Max. height ・Inductance Range: 1.0 H~1mH ・Rated Current Range: 65mA∼400mA ◆ Feature ・Magnetically unshielded construction. ・Ideally used in Printers, LCD TV, Copy Machine, Mainboard of the compounding machines, Adapters,

RF33

Contextual Info: RF Micro Devices General Purpose Amplifiers 18.7 dB RFM RF33 D 74 3.5 dB 175 dBm 65mA 170 DegC/W 13.2 dB 4.5 dB RFM RF33 D 75 Pb-Free and ROHS Compliant 16.0 dBm 65mA 175 DegC/W 19.8 dB RFM RF33 D 76 2.0 dB Actual Size 11.5 dBm 35mA 216 DegC/W 0.50 0.30

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LB3218T331K Features Item Summary 330 H(±10%), 65mA, 1207 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 1207/3218

Contextual Info: WJA1005 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • Cascadable gain block 50 – 1200 MHz 18 dB Gain +17 dBm P1dB +35 dBm OIP3 @ 900MHz Operates from +5V @ 65mA Robust 1000V ESD, Class 1C RoHS-compliant SOT-89 package

Contextual Info: WJA1505 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • • Cascadable gain block 50 – 1000 MHz 19 dB Gain +19 dBm P1dB +37 dBm OIP3 +51dBm OIP2 Operates from +5V @ 65mA Robust 1000V ESD, Class 1C RoHS-compliant SOT-89 package

Contextual Info: WJA1035 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • • Cascadable gain block 50 – 4000 MHz 15 dB Gain @ 1.9GHz +16.5 dBm P1dB @ 1.9GHz +35 dBm OIP3 @ 1.9GHz Operates from +5V @ 65mA • • • • Wireless Infrastructure

ic a1005

Abstract: TriQuint SOT-89 TAPE AND REEL INFORMATION A1005 JESD22-A114 TQP3M9008 WJA1005 WJA1005-PCB
Contextual Info: WJA1005 +5V Active-Bias InGaP HBT Gain Block Product Features • • • • • • • • Cascadable gain block 50 – 1200 MHz 18 dB Gain +17 dBm P1dB +35 dBm OIP3 @ 900MHz Operates from +5V @ 65mA Robust 1000V ESD, Class 1C RoHS-compliant SOT-89 package