65DMB Search Results

7c251

Abstract: a1s smd smd code A1s smd diode code A1s CY7C251 CY7C254 65WMB
Contextual Info: CY7C251 CY7C254 y CYPRESS 16K x 8 Power-Switched and Reprogrammable PROM • Direct replacement for bipolar PRO M s • C apable o f w ithstanding > 2001V static discharge Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed

Contextual Info: CY7C251 CY7C254 CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns 16,384 x 8 PROM Power Switched and Reprogrammable • TTL-compatible I/O • D irect replacement for bipolar PROMs • Capable o f w ithstanding > 2001V stat­

Contextual Info: CY7G287 CYPRESS 64K x 8 Reprogrammable Registered PROM Features • Slim 300-mil package • CMOS for optimum speed/power • Capable o f withstanding >2001V static discharge • Windowed for reprogrammability • High speed — tSA = 45 ns — tCo = IS ns

7C251

Abstract: C2515 SMD DIODE A13 C251-5 CY7C251-45WC CY7C251 CY7C254 01d smd code smd diode code A1s 5962-895370
Contextual Info: CY7C251 CY7C254 y CYPRESS Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns • Low power — 550 mW commercial — 660 mW (military) • Super low standby power (7C251) — Less than 165 mW when deselected

CY7C429-25PC

Abstract: CY7C420 CY7C421 CY7C425 CY7C429 IDT7201 IDT7202 IDT7203 CY7C429-30DC vcy7
Contextual Info: bSE D • S S ö ^ b b E O O l O bB l bTD I CYPRESS SEMICONDUCTOR CYPRESS SEMICONDUCTOR ICYP CY7C420, CY7C421 CY7C424, CY7C425 CY7C428, CY7C429 Cascadable 512 x 9 FIFO Cascadable lK x 9 FIFO Cascadable 2K x 9 FIFO • TTL compatible • Three-state outputs

CY7C419

Abstract: CY7C420 CY7C421 CY7C425 IDT7200 IDT7201 IDT7202 IDT7203 IDT7204 7C43
Contextual Info: fax id: 5404 /25/29/ CY7C419/21/25/29/33 256 x 9, 512 x 9, 1K x 9, 2K x 9, 4K x 9 Cascadable FIFO Features • 256 x 9, 512 x 9, 1,024 x 9, 2048 x 9, and 4096 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 50.0-MHz read/write independent of

B 503 Potentiometers

Abstract: cy7c421 COML-55 FF p21 CY7C419 IDT7200 IDT7201 IDT7202 IDT7203 IDT7204
Contextual Info: CY7C419/21/25/29/33 r* CYPRESS Features • 256 x 9, 512 x 9,1,024 x 9,2048 x 9, and 4096 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 50.0-MHz read/write independent o f depth/width • Low operating power — I c c i = 35 mA

CY7C425-15JI

Abstract: 7C419
Contextual Info: 2 5 6 x 9 , 5 1 2 x 9 , 1K x 9, 2 K x 9 , 4 K x 9 C ascadable FIFO Features • 256 x 9,512 x 9,1,024 x 9,2048 x 9, and 4096 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 50.0-MHz read/write independent of depth/width

CY7C425

Abstract: CY7C419 CY7C421 CY7C429 CY7C433 IDT7200 IDT7201 IDT7202 IDT7203 C4203
Contextual Info: 19/21/25/29/ CY7C419/21/25/29/33 256/512/1K/2K/4K x 9 Asynchronous FIFO Features • • • • • • • • • • • • • • • Asynchronous first-in first-out FIFO buffer memories 256 x 9 (CY7C419) 512 x 9 (CY7C421) 1K x 9 (CY7C425) 2K x 9 (CY7C429)

Contextual Info: CY7C286 CY7C287 CYPRESS 65,536 x 8 Reprogrammable SEMICONDUCTOR Asynchronous/Registered PROMs Features Functional Description The CY7C286 and the CY7C287 are high-perfbrmance 65,536 by 8-bit CMOS PROMs. The CY7C286 is configured in the JEDEC-standard S12K EPROM pin­

DATASHEET AM7202

Abstract: CY7C429-20JC 330 j65 CY7C433-30JI CY7C425 CY7C433-30JC CY7C429-15JI CY7C419 CY7C421 CY7C429
Contextual Info: CY7C419/21/25/29/33256/512/1K/2K/4K x 9 Asynchronous FIFO CY7C419/21/25/29/33 256/512/1K/2K/4K x 9 Asynchronous FIFO Features • Asynchronous first-in first-out FIFO buffer memories • 256 x 9 (CY7C419) • 512 x 9 (CY7C421) • 1K x 9 (CY7C425) • 2K x 9 (CY7C429)

CY7C425

Abstract: CY7C420 CY7C429-30DC CY7C42I-25JI CY7C421-40DC CY7C421 CY7C429 IDT7201 IDT7203 CY7C429-30PC
Contextual Info: 4bE D CYPRESS SSflTbbS □007117 5 OCYP CY7C420, CY7C421 CY7C424, CY7C425 CY7C428* CY7C429 SEMICONDUCTOR CYPRESS SEMICONDUCTOR Cascadeable 512 x 9 FIFO Cascadeable IK x 9 FIFO Cascadeable 2K x 9 FIFO 'T - 'A W • TTL compatible • Three-state outputs • Pin compatible and functional

333Q

Abstract: CY7C439 tba9 DIAGRAM-12
Contextual Info: CYPRESS SEMI CONDUCTOR bSE D BSf i ^bbE OOlDbai 11b « C Y P CY7C439 CYPRESS SEMICONDUCTOR Bidirectional 2K x 9 FIFO Features Functional Description • 2048 x 9 FIFO butter memory • Bidirectional operation • High-speed 28.5-MHz asynchronous reads and writes

Contextual Info: CY7C420, CY7C421 CY7C424, CY7C425 CY7C428, CY7C429 W" ‘ *K- CYPRESS SEMICONDUCTOR Features • 512 x 9,1,024 x 9,2,048 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 33.3-MHz read/write independent of depth/width

LC 7258

Abstract: 333Q CY7C287 32fl diode A14A
Contextual Info: CY7C287 * CYPRESS 64K x 8 Reprogrammable Registered PROM Features • Slim 300-mil package • CMOS for optimum speed/power • Capable o f withstanding > 2001V static discharge • Windowed for reprogrammability • High speed — tSA = 45 ns — tc o = 15 ns

Y7C425

Abstract: 2561b B 503 Potentiometers U 2561B V0120 CY7C428-25PC uv led 365 CY7C419 CY7C428 CY7C429
Contextual Info: /U H £ U . I l/ ^ D / 9 U Revision: August 18,1994 CY7C419/21/25/29/33 • / C Y P R E S S 2 5 6x 9, 5 1 2 x 9, I K x 9, 2Kx9T 4K x 9 Cascadable FIFO Features Functional Description • 256 x 9,512 x 9,1,024 x 9,2048 x 9, and 4096 x 9 FIFO buffer memory • Dual-port RAM cell

CY7C425

Abstract: C4206 1DT7201 CY7C429-20DC CY7C420
Contextual Info: 4b E D CYPRESS SSflTbbS □ 0 0 7 1 1 7 5 OCYP CY7C420, CY7C421 CY7C424, CY7C425 CY7C428* CY7C429 SEMICONDUCTOR CYPRESS SEMICONDUCTOR Cascadeable 512 x 9 FIFO Cascadeable IK x 9 FIFO Cascadeable 2K x 9 FIFO 'T - 'A W • TTL compatible • Three-state outputs

C2877

Abstract: c2874 7C28 c2872 C2879 CY7C287 7C287-65 CY7C287-55WMB
Contextual Info: 1CY 7C28 7 CY7C287 64K x 8 Reprogrammable Registered PROM Features put enable that can be programmed to be synchronous ES or asynchronous (E). It is available in a 28-pin, 300-mil package. The address set-up time is 45 ns and the time from clock HIGH to output valid is 15 ns.

A15C

Abstract: CY7C287 CY7C287-55PC LCOS uv
Contextual Info: CY7C286 CY7C287 Features • Capable of withstanding >2001V static discharge • CMOS for optimum speed/power • Windowed for reprogrammability Functional Description • High speed — tSA = 45 ns 7C287 — tco = 15 ns (7C287) — tACC = 50 ns (7C286)

CY7C433-25PC

Abstract: CY7C432 CY7C433-25JC CY7C433 IDT7204 7C432-30 C432 IQS12
Contextual Info: CYPRESS SEMICONDUCTOR fc.SE D eSfl'Jbfc.S G O l O b b ? 0 4 b I ICYP CY7C432 _ CY7C433 CYPRESS SEMICONDUCTOR Cascadable 4K x 9 FIFO Features Functional Description • • • The CY7C432 and CY7C433 are first-in first-out FIFO memories offered in

CY7C9116-35DC

Abstract: A2ND CY7C9116 CY7C9116-45DC CY7C517 CP4043 CP-59 CY7C9116-65DC DA1215 7C9115
Contextual Info: CY7C9115 CY7C9116/CY7C9X17 ¡s ZÆ , S jS W J ^ y p p p q c ; — •- - CMOS 16-Bit Microprogrammed ALU SEMICONDUCTOR Features • Fast — 35-ns worst-case propagation delay, Ito Y • Low power CMOS — Ice (max. at 10 MHz = 145 mA (commercial) — Icc (max. static) = 6 8 mA

CY7C419

Abstract: IDT7200 IDT7201 IDT7202 IDT7203 1DT7 CY7C424-40DMB CY7C421-30AC cy7c421
Contextual Info: CY7C419/21/25/29/33 ’* CYPRESS Features 256x9,512x9, lK x9, 2Kx9, 4K x 9 C ascadable FIFO Functional Description • 256 x 9, 512 x 9,1,024 x 9,2048 x 9, and 4096 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 50.0-MHz read/write

A2ND

Abstract: CY7C9116 7C9116 7C9115
Contextual Info: CY7C9115 CY7C9116/CY7C9117 CYPRESS SEMICONDUCTOR CMOS 16-Bit Microprogrammed ALU CY7C9117 separate I/O — One and two operand arithmetic and logical operations — Bit m anipulation, field insertion/ extraction instructions — Eleven types of instructions

3Cs 6 PIN SMD CHIP

Abstract: AFL smd code CY7C251 CY7C251-45PC Programming SMD code l32 u1p smd 7C251 CY7C254 W2265
Contextual Info: -c PRESS MbE D SEMICONDUCTOR • ^ 2 5 0 = ^ 2 0QGb7b7 1 , - if CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed Tor reprogrammability • Highspeed — 45 ns • Low power — 550 mW commercial — 660 mW (military) • Super low standby power (7C251)