65536X Search Results

24512A

Contextual Info: W24512A W in b o n d - - ; ^ ^ y 64K X 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24512A is a high speed, low power CMOS static RAM organized as 65536x 8 bits that operates on a single 5-volt power supply. This device Is manufactured using Winbond’s high performance CMOS

16PIN

Abstract: 51C64H-12 51C64H-8 51C64HL-12 51C64L-12 51C65L-10 51C65L-12 HY51C64-10 HY51C64-12 HY51C64-15
Contextual Info: - 172 — 64K A • m m m % it £ OC TRCY TCAD TAH TRAC max n s) ■ in (n s) CMOS Dynamic 4 7 f y / U f t ■ in (n s) ■in (n s) TP ■ in (n s) TWCY (n s) RAM(65536x1) m « TC'H ■in (n s) TfiWC n in (n s) VDD o r VCC (V) IDD nax (aA) À ID D STANDBY

29F100T

Abstract: 1 MEGA OHM RESISTOR MX29F100T 29f100
Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz

CY7C1298A

Abstract: GVT7164C18
Contextual Info: 298A CY7C1298A/ GVT7164C18 64K x 18 Synchronous Burst RAM Pipelined Output Features • • • • • • • • • • • • • • • • • • • The CY7C1298A/GVT7164C18 SRAM integrates 65536x18 SRAM cells with advanced synchronous peripheral circuitry

MX29F100T

Contextual Info: INDEX ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 30mA maximum active current

29F100T

Contextual Info: ADVANCED INFORMATION MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz

Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz

Contextual Info: G E C P L E S S E Y ma9287 S L M I C O N L l i C T O R S Radiation Hard 65536x1 Bit Static RAM Preliminary Data) S 1 0 3 0 3 P D S Issu e 2.3 O c t o b e r 1990 Features • 1.5pm CMOS-SOS technology • Latch-upfree • Fast access time 45ns typical • Total dose 106 rad (Si)

Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz

65536X8

Contextual Info: jm i « im W23512 Winbond /iTTTTX 64K X 8 MASK ROM DESCRIPTION FEATURES The W23512 i s a • Power Consumption : High Speed Mask-Programm­ A c tiv e : 150mW T y p . a b le Read-Only Memory O rganized as 65536X Standby : 25mW(Typ.) 8 B it s and •A c c e s s Time : 200/250 ns (Max.)

61256P

Abstract: 61256F HN61256 HN61256P H*61256
Contextual Info: HN61256P, HN612S6FP 327 6 8 x 8-bit or 655 3 6 x 4-bit CMOS Mask Programmable Read Only Memory The Hitachi HN61256P/FP is a mask programmable 32768 x 8 -b it or 65536x4-bit CMOS read only memory. It operates from a single power supply and is compatible w ith T T L . Low power consumption

Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz

Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:90/120ns Low power consumption - 40mA maximum active current 5MHz

Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:90/120ns Low power consumption - 40mA maximum active current 5MHz

Contextual Info: G E C P L E S S E Y ma9187 — !t— — MB— • — — Radiation Hard 65536x1 Bit Static RAM Preliminary Data S10309PDS Issue 2.3 October 1990 Features • 1.5|im CMOS-SOS technology • Latch-upfree • Fast access time 45ns typical • Total dose 10* rad (Si)

Contextual Info: MX29F100T/B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY FEATURES • • • • • • • • • 5V±10% for read, erase and write operation 131072x8/ 65536x16 switchable Fast access time:55/70/90/120ns Low power consumption - 40mA maximum active current 5MHz

x7ta

Contextual Info: fTÍTrK Winbond 64K X 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The W24512A is a high speed, low power CMOS static RAM organized as 65536x8 bits that operates on a single 5-volt pow er supply. This device is manufactured using W inbond’s high performance CMOS

CY7C1298A

Abstract: GVT7164C18
Contextual Info: 298A CY7C1298A/ GVT7164C18 64K x 18 Synchronous Burst RAM Pipelined Output Features • • • • • • • • • • • • • • • • • • • The CY7C1298A/GVT7164C18 SRAM integrates 65536x18 SRAM cells with advanced synchronous peripheral circuitry

VS1003

Contextual Info: VS1003 VS1003 - MP3/WMA AUDIO CODEC Features Description • Decodes MPEG 1 & 2 audio layer III CBR +VBR +ABR ; WMA 4.0/4.1/7/8/9 all profiles (5-384kbit/s); WAV (PCM + IMA ADPCM); General MIDI / SP-MIDI files • Encodes IMA ADPCM from microphone or line input

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

AX 1668 F 24 pin

Contextual Info: SMJ27C512 65536 BY 8-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY SGMS019D - SEPTEMBER 1987 - REVISED OCTOBER 1997 Organization . . . 65536 by 8 Bits J PACKAG E High-Reiiabiiity MIL-PRF-38535 Processing T O P V IE W Single 5-V Power Supply A15[ Pin-Compatible With Existing 512K

tc 106-10

Abstract: smd transistor w J 3 58 bts 425 l1 transistor SMD p02 smd diode p126 P56. smd 013A1 B15 diode smd diode DB 3 C F2N SMD
Contextual Info: REJ09B0034-0131 16/32 M32C/83 Group M32C/83, M32C/83T Hardware Manual RENESAS 16/32-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M32C/80 SERIES Before using this material, please visit our website to verify that this is the most current document available.

MH1SS1

Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Contextual Info: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik

Contextual Info: STR71xFxx STR710RZ ARM7TDMI 32-bit MCU with Flash, USB, CAN, 5 timers, ADC, 10 communication interfaces Features • ■ Core – ARM7TDMI 32-bit RISC CPU – 59 MIPS @ 66 MHz from SRAM – 45 MIPS @ 50 MHz from Flash LQFP64 10 x 10 Memories – Up to 256 Kbytes Flash program memory