65 MHZ CIRCUIT TRANSMITTER Search Results

siemens rs 1002

Abstract: 211 power Triode 55 kw V221 Q81-X901 Q81-X168 siemens tube rs tube triode push-pull CLASS C FUSE SIEMENS 1000 97 0
Contextual Info: - Transmitter Triode RS 2021 V YD 1002 For frequencies up to 70 MHz Ordering code Q53-X2021 Vapor-cooled triode with coaxial grid lead-through, suitable for use as RF amplifier, oscillator and

qpsk transmitter

Abstract: Datasheets for BB132 varicap SO32 TDA8050A qpsk transmitter block diagram FCE448 siemens infrared preamplifier philips rf manual 4 shift QPSK
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA8050A QPSK transmitter Product specification File under Integrated Circuits, IC02 1999 Nov 05 Philips Semiconductors Product specification QPSK transmitter TDA8050A FEATURES Two PLLs are incorporated, the first PLL includes:

DS90CF363

Abstract: DS90CF363MTD MTD48
Contextual Info: DS90CF363 +3.3V LVDS Transmitter 18-Bit Flat Panel Display FPD Link— 65 MHz General Description Features The DS90CF363 transmitter converts 21 bits of CMOS/TTL data into three LVDS (Low Voltage Differential Signaling) data streams. A phase-locked transmit clock is transmitted in

DS90CF363

Abstract: DS90CF363MTD MTD48 65 MHZ circuit transmitter
Contextual Info: DS90CF363 DS90CF363 +3.3V LVDS Transmitter 18-Bit Flat Panel Display FPD Link— 65 MHz General Description Features The DS90CF363 transmitter converts 21 bits of CMOS/TTL data into three LVDS (Low Voltage Differential Signaling) data streams. A phase-locked transmit clock is transmitted in

DS90CF383

Abstract: DS90CF383MTD MTD56
Contextual Info: DS90CF383 DS90CF383 +3.3V LVDS Transmitter 24-Bit Flat Panel Display FPD Link—65 MHz General Description Features The DS90CF383 transmitter converts 28 bits of CMOS/TTL data into four LVDS (Low Voltage Differential Signaling) data streams. A phase-locked transmit clock is transmitted in parallel with the data streams over a fifth LVDS link. Every cycle

FX1115

Contextual Info: N AUER PHILIPS/DISCRETE 86D 0 1 7 7 8 otE » • D 3T T - ? Jl oomoib a 0 "7 BLX68 U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor tor use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. t has a capstan envelope with a moulded cap. All leads are isolated from the stud.

DS90CF383

Abstract: DS90CF383MTD MTD56
Contextual Info: DS90CF383 DS90CF383 +3.3V LVDS Transmitter 24-Bit Flat Panel Display FPD Link— 65 MHz General Description Features The DS90CF383 transmitter converts 28 bits of CMOS/TTL data into four LVDS (Low Voltage Differential Signaling) data streams. A phase-locked transmit clock is transmitted in parallel with the data streams over a fifth LVDS link. Every cycle

DS90CF383

Abstract: DS90CF383MTD MTD56
Contextual Info: DS90CF383 +3.3V LVDS Transmitter 24-Bit Flat Panel Display FPD Link— 65 MHz General Description Features The DS90CF383 transmitter converts 28 bits of CMOS/TTL data into four LVDS (Low Voltage Differential Signaling) data streams. A phase-locked transmit clock is transmitted in parallel with the data streams over a fifth LVDS link. Every cycle

DS90CF363

Abstract: DS90CF363MTD MTD48 LVDS display 40 pin
Contextual Info: DS90CF363 DS90CF363 +3.3V LVDS Transmitter 18-Bit Flat Panel Display FPD Link—65 MHz General Description Features The DS90CF363 transmitter converts 21 bits of CMOS/TTL data into three LVDS (Low Voltage Differential Signaling) data streams. A phase-locked transmit clock is transmitted in

Contextual Info: N AMER PHILIPS/DISCRETE b 'lE ]> bb53^31 □ D 2 f i ci m IAPX TTD BLV21 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

Contextual Info: OLE D N AMER PHILIPS/DISCRETE 86D 01766 D 7 ' ^ »• _ _ ——-bbS3T31 DD140DN 1 I o -s r J l A BLX67 U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor for use in class-B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,8 V ,

GRM39

Abstract: PDC800M PC8130TA
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC8130TA, µPC8131TA –15 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE DESCRIPTION The µPC8130TA and µPC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier.

DS90CF383

Abstract: DS90CF383MTD MTD56
Contextual Info: General Description Features The DS90CF383 transmitter converts 28 bits of CMOS/TTL data into four LVDS Low Voltage Differential Signaling data streams. A phase-locked transmit clock is transmitted in parallel with the data streams over a fifth LVDS link. Every cycle

DS90C363

Abstract: DS90C363MTD DS90CF364 MTD48
Contextual Info: DS90C363/DS90CF364 +3.3V Programmable LVDS Transmitter 18-Bit Flat Panel Display FPD Link—65 MHz +3.3V LVDS Receiver 18-Bit Flat Panel Display (FPD) Link—65 MHz General Description Features The DS90C363 transmitter converts 21 bits of CMOS/TTL data into three LVDS (Low Voltage Differential Signaling)

Contextual Info: I N AUER PHILIPS/DISCRETE bb53*131 □ 02*1732 T13 BLY92C b*!E D IAPX A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

Contextual Info: •I bb53^31 002flT33 624 N AHER PHILIPS/DISCRETE IAPX b lE BLV20 D V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

DS90CF363

Abstract: DS90CF363MTD MTD48
Contextual Info: General Description Features The DS90CF363 transmitter converts 21 bits of CMOS/TTL data into three LVDS Low Voltage Differential Signaling data streams. A phase-locked transmit clock is transmitted in parallel with the data streams over a fourth LVDS link. Every

BLY88C

Contextual Info: ^53*131 0 0 2 = ^ 2 SO? • APX BLY88U/01 b'lE » N AMER PHILIPS/DISCRETE J V V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 13,5 V. The transistor is resistance stabilized and is

BLY94

Abstract: philips bly94
Contextual Info: II N AUER PHILIPS/DISCRETE b 'lE bbS3^31 002T75fl 22T BLY94 J> APX J V. V.H.F. POWER TRANSISTOR N-P-N planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a supply voltage of 28 V. The transistor is resistance stabilized. Every tran­

RIL3N

Abstract: transistor 1107 transistor tt 2222 W045 TT 2222 BLY91C j0718 RF POWER TRANSISTOR NPN vhf transistor L6
Contextual Info: b SE 711002b D DDb3bll Sbl • PHIN BLY91C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

transistor tt 2222

Abstract: BLV20 TT 2222 RF POWER TRANSISTOR NPN vhf j0718 2222 123 capacitor philips ic TT 2222
Contextual Info: PHILIPS INTERNATIONAL b5E J> m 711Gö5b CIQb2ü30 O^ä BLV20 V.H.F. PO W ER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

50 inch lcd panel lvds

Abstract: rgb 18 bit to lvds panels Quad LVDS interface pin connection lvds cable C1996 DS90CF563 DS90CF563MTD DS90CF564 DS90CF564MTD EIA-644
Contextual Info: February 1996 DS90CF563 DS90CF564 LVDS 18-Bit Color Flat Panel Display FPD Link 65 MHz General Description The DS90CF563 transmitter converts 21 bits of CMOS TTL data into three LVDS (Low Voltage Differential Signalling) data streams A phase-locked transmit clock is transmitted

transistor L6

Abstract: BLY92C BLY92 PL 431 transistor
Contextual Info: N AUER PHILIPS/DISCRETE b'lE D • btSB'îBl 002*1732 T13 ■ APX JL BLY92C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­

Contextual Info: LDMOS FIELD EFFECT TRANSISTOR NE55410GR N-CHANNEL SILICON POWER LDMOS FET FOR 2 W + 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER DESCRIPTION The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different