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    64N60 Search Results

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    64N60 Price and Stock

    IXYS Corporation

    IXYS Corporation IXFK64N60P3

    MOSFETs 600V 64A 0.095Ohm PolarP3 Power MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFK64N60P3 1,314
    • 1 $22.81
    • 10 $14.94
    • 100 $14.38
    • 1000 $13.67
    • 10000 $13.67
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    TTI IXFK64N60P3 Tube 25 25
    • 1 -
    • 10 -
    • 100 $14.38
    • 1000 $13.16
    • 10000 $12.90
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    TME IXFK64N60P3 196 1
    • 1 $19.89
    • 10 $14.31
    • 100 $10.91
    • 1000 $10.91
    • 10000 $10.91
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    IXYS Corporation IXFX64N60P

    MOSFETs MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFX64N60P 1,135
    • 1 $27.91
    • 10 $18.37
    • 100 $18.37
    • 1000 $18.37
    • 10000 $18.37
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    TTI IXFX64N60P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $15.84
    • 10000 $15.84
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    TME IXFX64N60P 1
    • 1 $21.50
    • 10 $21.50
    • 100 $16.72
    • 1000 $15.86
    • 10000 $15.86
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    IXYS Corporation IXFN64N60P

    MOSFET Modules 600V 64A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFN64N60P 892
    • 1 $40.79
    • 10 $29.56
    • 100 $29.56
    • 1000 $29.56
    • 10000 $29.56
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    TTI IXFN64N60P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $25.49
    • 10000 $25.49
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    TME IXFN64N60P 1
    • 1 $32.67
    • 10 $28.36
    • 100 $27.36
    • 1000 $27.36
    • 10000 $27.36
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    IXYS Corporation IXFK64N60P

    MOSFETs 600V 64A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFK64N60P 356
    • 1 $26.15
    • 10 $18.17
    • 100 $18.17
    • 1000 $18.17
    • 10000 $18.17
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    TTI IXFK64N60P Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $15.67
    • 10000 $15.67
    Buy Now
    TME IXFK64N60P 1
    • 1 $24.30
    • 10 $19.42
    • 100 $15.48
    • 1000 $15.48
    • 10000 $15.48
    Get Quote

    IXYS Corporation IXFX64N60P3

    MOSFETs 600V 64A 0.095Ohm PolarP3 Power MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXFX64N60P3 225
    • 1 $18.38
    • 10 $10.82
    • 100 $10.82
    • 1000 $10.82
    • 10000 $10.82
    Buy Now
    TTI IXFX64N60P3 Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $9.75
    • 10000 $9.75
    Buy Now
    TME IXFX64N60P3 1
    • 1 $13.95
    • 10 $10.99
    • 100 $9.84
    • 1000 $9.32
    • 10000 $9.32
    Get Quote

    64N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFN 64N60P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 600 V 50 A 96 m Ω 200 ns miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


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    64n60pot-227e153432 PDF

    64N60P

    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 64N60P IXFX 64N60P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Continuous


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    64n60p PDF

    Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFR 64N60P = = ≤ ≤ RDS on trr (Electrically Isolated Back Surface) 600 V 36 A 105 m Ω 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


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    64n60pisoplus247e153432 PDF

    64N60

    Abstract: 64N60P ISOPLUS247
    Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFR 64N60P = = ≤ ≤ RDS on trr (Electrically Isolated Back Surface) 600 V 36 A 105 m Ω 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


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    64n60pisoplus247e15343264n60 PDF

    64N60P

    Abstract: PLUS247 IXFK
    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 64N60P IXFX 64N60P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Continuous


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    64n60pplus247ixfk PDF

    D33AD

    Abstract: 64N60 64N60P ISOPLUS247 33A d
    Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFR 64N60P = = ≤ ≤ RDS on trr (Electrically Isolated Back Surface) 600 V 29 A Ω 105 mΩ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions


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    64n60pd33ad64n60isoplus247+133a d PDF

    Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 64N60P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 600 V = 34 A ≤ 96 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions


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    isoplus24764n60p PDF

    IXFN 64N60P

    Abstract: 64N60P IXFN64N60P
    Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFN 64N60P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 600 V 50 A 96 m Ω 200 ns miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original
    64n60pot-227e153432ixfn 64n60p+1ixfn64n60p PDF

    64N60P

    Abstract: PLUS247
    Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 64N60P IXFX 64N60P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


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    64n60pplus247 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


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    o-220isoplus220tmo-247isoplus247tm+15o-264isoplus264tmplus220plus220smdo-252stw20n602n60pixfb100n50ixfb100n50pstw20n60fdixfb100n50p to-264ixys ixfn100n50pixfn48n60pixfh30n60pixfn100n50p PDF