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    64N60 Price and Stock

    Littelfuse Inc

    Littelfuse Inc IXFK64N60P

    Discmosfetn-Ch Hiperfet-Polar To-264(3)/; |Littelfuse IXFK64N60P
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    Littelfuse Inc IXFR64N60P

    Discmosfetn-Ch Hiperfet-Polar Isoplus247/ Tube |Littelfuse IXFR64N60P
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    Littelfuse Inc IXFN64N60P

    Discmsft N-Ch Hiperfet-Polasot-227B(Mini; |Littelfuse IXFN64N60P
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    Littelfuse Inc IXFX64N60P

    Mosfet, N-Ch, 600V, 64A, Plus247; |Littelfuse IXFX64N60P
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    Littelfuse Inc IXFX64N60Q3

    Discmsft Nchhiperfet-Q3 Class To-247Ad/; |Littelfuse IXFX64N60Q3
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    Find more 64N60 price and stock on Findchips.com

    64N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFN 64N60P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 600 V 50 A 96 m Ω 200 ns miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		64n60pot-227e153432 PDF

    64N60P

    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 64N60P IXFX 64N60P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Continuous


    Original     		64n60p PDF

    Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFR 64N60P = = ≤ ≤ RDS on trr (Electrically Isolated Back Surface) 600 V 36 A 105 m Ω 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original     		64n60pisoplus247e153432 PDF

    64N60

    Abstract: 64N60P ISOPLUS247
    Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFR 64N60P = = ≤ ≤ RDS on trr (Electrically Isolated Back Surface) 600 V 36 A 105 m Ω 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original     		64n60pisoplus247e15343264n60 PDF

    64N60P

    Abstract: PLUS247 IXFK
    Contextual Info: PolarHVTM HiPerFET Power MOSFET IXFK 64N60P IXFX 64N60P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 600 V VGSS Continuous


    Original     		64n60pplus247ixfk PDF

    D33AD

    Abstract: 64N60 64N60P ISOPLUS247 33A d
    Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFR 64N60P = = ≤ ≤ RDS on trr (Electrically Isolated Back Surface) 600 V 29 A Ω 105 mΩ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions


    Original     		64n60pd33ad64n60isoplus247+133a d PDF

    Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 64N60P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) = 600 V = 34 A ≤ 96 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions


    Original     		isoplus24764n60p PDF

    IXFN 64N60P

    Abstract: 64N60P IXFN64N60P
    Contextual Info: PolarHVTM HiPerFET Power MOSFET VDSS ID25 IXFN 64N60P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 600 V 50 A 96 m Ω 200 ns miniBLOC, SOT-227 B (IXFN) E153432 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		64n60pot-227e153432ixfn 64n60p+1ixfn64n60p PDF

    64N60P

    Abstract: PLUS247
    Contextual Info: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 64N60P IXFX 64N60P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		64n60pplus247 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		ms-01310-pin5m-1994mo-229+107n60b equivalent18n50 equivalentixgh 1499mosfet smd 4407ixdd 614c 547 b w57 bjt transistorr1275ns20lr1271ns12cixys cs 20-22 mof1ixtp 220n04t2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Contextual Info: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		o-220isoplus220tmo-247isoplus247tm+15o-264isoplus264tmplus220plus220smdo-252stw20n602n60pixfb100n50ixfb100n50pstw20n60fdixfb100n50p to-264ixys ixfn100n50pixfn48n60pixfh30n60pixfn100n50p PDF