640 T FET Search Results

BS 551

Contextual Info: C o m p o un d Field Effect P o w e r T ran s is to r fiPA1640 i y j y 7 ^ H PA 1 640 i, 2 - IN P U T A N D ^ f - 4 /\° 7 ~ MOS FET 7 K 8 [ U S M iJ & N ? 1+ h Z ^ it Z M OS FET T K T 'T c t lE N A B L E iS ii^ - l/ T U 'S - r o 0 ^ - 7 °> K K O B l± > W * T #7 < - V - K ^ ^ ^ T ' - T c

8EC20

Abstract: NJU6419
Contextual Info: NJ L J6 4 1 9 DOT M A T R I X LCD 8 0 - Q U T SEGMENT I GENERAL DESCRIPTION PRELIMINARY DRIVER • PACKAGE OUTLINE The NJU6419 is a serial input, 80-out segment driver for dot natr ix LCDs. In combination with the common driver NJU6418,it can drive large scale dot matrix LCD panels, such as 640 x

32C43

Abstract: lg crt monitor circuit diagram BAV14 sl68d P82C431 BA536 D6105 ibm crt monitor circuit diagram crt LG monitor circuit diagram Q355
Contextual Info: Q I I P 5 82C 431/82C 432A /82C 433/82C 434A CS8240: ENHANCED GRAPHICS CHIPSet • 100% hardware and software compatible to IBM™ Enhanced Graphics Adapter card ■ Full 16 color support in 640 x 200 and 320 * 200 pixels for IBM Color Display ■ Supports IBM Color Graphics and Monorhmm g adapters, Slid Hgrcy! $T“ GfaphfOS

Contextual Info: _ _ VP0635 VP0640 — P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON I d(ON) BV dgs (max) (min) TO-39 TO-92 TO-220 DICE+ -350V 25Q -0.4A V P 0 635 N 2 V P 0 635 N 3 V P 0 635 N 5 V P 0 635 N D -400V

SO14 package

Contextual Info: r n ln rfir C U IO O H High-Speed DMOS Quad FET Analog Switch Arrays CORPORATION \J SD5400/SD5401/SD5402 FEATURES: DESCRIPTION: Propagation Time . 600 ps On Resistance Insertion Loss Capacitances: Analog In p u t .3.5pF typ.

SD54B2

Abstract: SD5400 SD5000 SD5400CY SD5401 SD5401CY SD5402 SD5402CY XSD5000 XSD5001
Contextual Info: High-Speed DMOS Quad FET Analog Switch Arrays calocft CORPO RATIO N SD5400/ SD5401/SD54B2 FEATURES: DESCRIPTION: Propagation Tim e . 600 ps On Resistance Insertion Loss Capacitances: Analog In p u t .3.5pF typ.

nec a1640

Abstract: transistor a1640 IC-3373 smd transistor yb a1640 IEI-1213 IPA1640GS MEI-1202 DD 127 transistor
Contextual Info: DATA SHEET nec Æmsmrnm COMPOUND FIELD EFFECT POWER TRANSISTOR r ßPM 640 MONOLITHIC POWER MOS FET ARRAY DESCRIPTION The /¿PA1640 is M onolithic N-channel Power M O S FET A rray that built CONNECTION DIAGRAM in 8 circuits w ith 2 A N D GATE. In groups of 4 circuits and they each have ENABLE term inal.

CHA Series

Abstract: photodiode ge CHA-200 CHA-204 Centronic series t
Contextual Info: CENTRQNIC INC» E-0 13E D | DIV m sa so 7- 0 D 0 0 2 C1C1 T | I 1 TECHNICAL DATA SHEET C H A -200 C H A -204 HYBRID PHOTOMETRY AMPLIFIER C entro n ic CHA s e r ie s of p h o to d e te c to rs i s a h y b rid photom etry a m p lifie r w ith a b u i l t - i n GaAsP photodiode MQS FET

IRF240

Abstract: IN4723 irf640 IRF241 diodes IN4723 IRF243 IRF242 IRF641 IRF642 IRF643
Contextual Info: • IRF243 ■ IRF643 ■ IRF242 ■ IRF642 ■ IRF241 ■ IRF641 IRF240 IRF640 IRF240 ■ IRF241 ■ IRF242 ■ IRF243 IRF640 ■ IRF641 ■ IRF642 ■ IRF643 a S ilic o n ix Advanced Information 200V MOSPOWER N-Channel Enhancem ent-Mode These power FETs are designed especially for o ffline sw itching regulators, converters,

Contextual Info: M w T -11 T l~ GaÁs FET DEVICE PRELIMINARY I M I C R OWAVE . 4268 Solar Way Fr$mont,CA 94538 415-651-6700 FAX 415-651-2208 TE C H N O LO fiT . - 37E — - •■ -.-7- D -. H blS M lO O - — - QOGQOS'i - _ — fl M M R l i l v ~ ~ ï _ y M ICRO W A VE T e c H NO L OG Y

marking code 0* dbm

Contextual Info: HMJ7-1 The Communications Edge TM High Dynamic Range FET Mixer Product Information Product Features Product Description • Greater than +34 dBm IIP3 The HMJ7-1 is a high dynamic range GaAs FET mixer. This active broadband mixer realizes a typical third order

2SK2829

Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
Contextual Info: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586

MWT1171HP

Contextual Info: MICROWAVE TECHNOLOGY bbE D • blEMlQG ÜDDDS^b ET7 ■ PIRIdV MwT-11 16 GHz HIGH POWER GaAs FET MicroWave Technology 1-751 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES 1-731 1 WATT POWER OUTPUT AT 12 GHZ HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY M ETAL/GOLD

G-628

Abstract: SPC8106F SPC8108F0C SPC8106FOC 1-B636 1-B627 1-R630 SPC8106F0C 1-G626 1-G628
Contextual Info: SPC8106Foc VGA LCD CONTROLLER • DESCRIPTION The SPC8106F0C is a versatile mixed voltage VG A graphics controller capable of driving liquid crystal displays, T FT displays and analog CRT monitors. The controller integrates all LCD interface, sequencing and

Contextual Info: MwT-17 500 MHz-12 GHz High Linearity Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y |4- 7 5 ->| p 75 -+I • 1 W ATT POWER OUTPUT WITH HIGH LINEARITY • HIGH ASSOCIATED GAIN • 0.8 MICRON REFRACTORY METAL/GOLD GATE • 2400 MICRON GATE WIDTH • DIAMOND-LIKE CARBON PASSIVATION

D3A DIODE

Contextual Info: 2SK1203 SILICON N-CHANNEL MOS FET •& • X 'f fi -vi->-r • X 'f y -f- > ^ U ^ .a U - ? DC—DC ^ 3.6 B 0.9 1. Gate 2. Drain Flange 3. Source (D imensions in mm) rue i u- rl 5.45 ± 0.5 5.45 ± 0 5 (TO-3P) ■ ABSOLUTE MAXIMUM RATINGS ( 7 a = 25°C) R ating

2SK68

Abstract: 2SK1774 2SK684 10MAVgs
Contextual Info: 4M^b20S 2SK1774 0 0 1 3 5 4^ 344 • H I T 4 HITACHI/COPTOELECTRONICS tiE I Silicon N Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC

2SK415

Contextual Info: 2SK415 SILICON N-CHANNEL MOS FET y U = 3 > N » r * JUMOS FET HIGH SPEED POWER SWITCHING IB 1. *f 2. \ : G a te K ^ A > ' D ra in 7 7 V ÿ (F la n g e ) 3. */ —• X .* S o u rc e ( D im e n s io n s in mm) (TO-3P) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: 2SK1626,2SK1627 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current N o secondary breakdown Suitable for switching regulator and DC -D C converter Outline

Contextual Info: 44^505 2SK1774 0D13541 344 • H I T M HITACHI/ OPTOELECTRONICS blE D Silicon N Channel MOS FET Application High speed power switching TO-3P*FM Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC

Contextual Info: 2SK1313 L (S), 2SK1314(L)(S) Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter

S47k

Abstract: MTM6N80E DIODE 851 MOTOROLA 2N3904 AN569
Contextual Info: Order this data sheet by MTM6N80E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M TM 6N 80E Designer’s Data Sheet TMOS E-FET™ Pow er Field E ffect lYansistor Motorola Preferred Device N-Channel Enhancem ent-M ode Silicon G ate TMOS POWER FET 6.0 AMPERES RDS on = 1-2 OHM

6-pin LCC

Contextual Info: Back to FETs POWER MOSFET - N CHANNEL SURFACE MOUNT • • • • Switching Power Supplies Repetitive Avalanche Rating Ceramic Leedless Chip Carrier High Reliability ABSOLUTE M AXIM UM RATINGS Tc = 25°C unless otherwise noted Drain-Source Voltage Gate-Source Voltage

TLO72

Abstract: tl074 tl084 TLO72 data TLO-72 DUAL OP-AMPS TL062 TL084 TL082 TL074 TL062 TL084 TO-99
Contextual Info: J-FET INPUT OP-AMPs DUAL OP-AMPs Part num ber Function TL062/TL062A/TL062B Low power Low noise TL072/TL072A/TL072B TL082/TL082A/TL082B Low pow er <1 mA • Single supply A djustable o ffs e t Bandw idth > 2 MHz Other charac. General purpose Page' • 201 225