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    onsemi MOC3063SM

    Triac Driver Output Optocoupler, 6-Pin DIP 600V Zero Crossing. - Rail/Tube (Alt: MOC3063SM)
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    Avnet Americas MOC3063SM Tube 2,000
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    Newark MOC3063SM Bulk 6,388 1
    • 1 $0.88
    • 10 $0.51
    • 100 $0.44
    • 1000 $0.42
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    Rochester Electronics MOC3063SM 24,000 1
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    TME MOC3063SM 1,182 1
    • 1 $0.73
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    Avnet Asia MOC3063SM 47 Weeks 3,000
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    Avnet Silica MOC3063SM 48 Weeks 1,000
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    EBV Elektronik MOC3063SM 49 Weeks 1,000
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    Flip Electronics MOC3063SM 2,780
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    Maritex MOC3063SM 5 1
    • 1 $0.81
    • 10 $0.66
    • 100 $0.48
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    Amphenol Corporation AT06-3S-MM01

    - Bulk (Alt: 34R6628)
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    Avnet Americas () AT06-3S-MM01 Bulk 1
    • 1 $1.98
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    AT06-3S-MM01 Box 14 Weeks 1,100
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    TTI AT06-3S-MM01 Box 5
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    TME AT06-3S-MM01 1,100
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    Avnet Abacus AT06-3S-MM01 14 Weeks 1,100
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    Maritex AT06-3S-MM01 1,999 1
    • 1 $2.41
    • 10 $1.74
    • 100 $1.19
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    Samtec Inc ZLTMM-120-63-SM-D-455

    - Bulk (Alt: ZLTMM-120-63-SM-D-455)
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    Avnet Americas ZLTMM-120-63-SM-D-455 Bulk 1 Weeks, 3 Days 1
    • 1 $13.89
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    • 100 $9.32
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    Sager ZLTMM-120-63-SM-D-455 1
    • 1 $15.71
    • 10 $14.88
    • 100 $10.19
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    Master Electronics ZLTMM-120-63-SM-D-455
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    Glenair Inc ITS4100A36-3SM25N0F6

    5015 REVERSE BAYONET POWER PRODUCTS - Bulk (Alt: ITS4100A36-3SM25N0F6)
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    Avnet Americas ITS4100A36-3SM25N0F6 Bulk 5 Weeks 1
    • 1 $1023.65
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    Newark ITS4100A36-3SM25N0F6 Bulk 1
    • 1 $934.11
    • 10 $425.73
    • 100 $333.09
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    Interstate Connecting Components ITS4100A36-3SM25N0F6
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    Glenair Inc ITS4108R36-3SM22

    5015 REVERSE BAYONET POWER PRODUCTS - Bulk (Alt: ITS4108R36-3SM22)
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    Avnet Americas ITS4108R36-3SM22 Bulk 2 Weeks 1
    • 1 $1276.51
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    Interstate Connecting Components ITS4108R36-3SM22
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    Find more 63SM price and stock on Findchips.com

    63SM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    UP78

    Abstract: Aaa SMD MARKING
    Contextual Info: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		si8401dbsi3443dvsi8401db-t1-e12011/65/eu+42002/95/ec12-mar-12up78aaa smd marking PDF

    Contextual Info: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		si8473edb2002/95/ec8473esi8473edb-t1-e1+22011/65/eu12-mar-12 PDF

    SI-8100D

    Abstract: si8100 Si8100DB
    Contextual Info: Si8100DB Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, d RDS(on) () (Max.) 25 0.0108 at VGS = 10 V 9.5 0.0124 at VGS = 4.5 V 8.9 Qg (Typ.) 6.8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		si8100db2002/95/ecsi8100db-t2trademarks2011/65/eu+312-mar-12si-8100dsi8100 PDF

    Fuses A

    Abstract: fuse base IEC 269
    Contextual Info: NH KNIFE BLADE NH fuses are typically used for power distribution applications and to protect large electrical devices such as motors, drives, etc. They are available in seven sizes with a current range of 2 to 1600 Amps. NH fuses have knife blades at both ends,


    Original     		nhc002/660v4/660v6/660v+810/660v16/660v20/660v25/660v32/660v35/660vfuses afuse base iec 269 PDF

    Contextual Info: Si8475EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		si8475edb2002/95/ec8475esi8475edb-t1-e1+225hay11-mar-11 PDF

    Contextual Info: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		si8473edb2002/95/ec8473esi8473edb-t1-e1+111-mar-11 PDF

    smd marking AAAA

    Contextual Info: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging


    Original     		si8402dbsi8402db-t1-e111-mar-11smd marking aaaa PDF

    UP78

    Contextual Info: Si8413DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 6.5 0.063 at VGS = - 2.5 V - 5.7 Qg (Typ.) 14 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		si8413dbsi8413db-t1-e12011/65/eu2002/95/ec+212-mar-12up78 PDF

    Contextual Info: Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.055 at VGS = - 4.5 V - 4.9 0.070 at VGS = - 2.5 V - 4.4 0.090 at VGS = - 1.8 V - 4.0 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging


    Original     		si8405dbsi8405db-t1-e111-mar-11 PDF

    Contextual Info: Si8487DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY -30 • TrenchFET power MOSFET RDS(on) () MAX. ID (A) a, e 0.031 at VGS = -10 V -7.7 • Low-on resistance 0.035 at VGS = -4.5 V -7.3 • Ultra-small 1.6 mm x 1.6 mm maximum outline


    Original     		si8487dbsi8409db848xx2002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


    Original     		si8902edb8902e2011/65/eu2002/95/ec+112-mar-12 PDF

    Contextual Info: Si8413DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A) 0.048 at VGS = - 4.5 V - 6.5 0.063 at VGS = - 2.5 V - 5.7 Qg (Typ.) 14 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		si8413dbsi8413db-t1-e12011/65/eu2002/95/ec+112-mar-12 PDF

    Contextual Info: Si8424DB Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 0.077 at VGS = 1.2 V 1.3 VDS (V) 8 Qg (Typ.) 20 nC


    Original     		si8424db2011/65/eu2002/95/ec12-mar-12 PDF

    Contextual Info: Si8475EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 VDS (V) - 20 • • • • TrenchFET Power MOSFET Typical ESD Protection 3000 V Gate-Source OVP


    Original     		si8475edb8475esi8475edb-t1-e12002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: Si8409DB Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.046 at VGS = - 4.5 V - 6.3 0.065 at VGS = - 2.5 V - 5.3 Qg (Typ.) 17 MICRO FOOT Bump Side View 3 Backside View APPLICATIONS 2 D D S G 4 • TrenchFET Power MOSFET


    Original     		si8409dbsi8401db2002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		si8473edb2002/95/ec8473esi8473edb-t1-e1+111-mar-11 PDF

    Contextual Info: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging


    Original     		si8402dbsi8402db-t1-e12011/65/eu2002/95/ec+112-mar-12 PDF

    5SE2250

    Abstract: 5sh20 500NH3B 5SB12 100NH1B
    Contextual Info: SIEMENS / ALTECH FUSE CROSS REFERENCE Note: Not all crosses are 100% identical but all are sufficient substitutes for fit, form and function. Siemens No. 3NA1431-6 3NA1432-6 3NA1434-6 3NA2105 3NA2107 3NA2110 3NA2114 3NA2117 3NA2120 3NA2122 3NA2124 3NA2130


    Original     		3na1431-63na1432-63na1434-63na2105+113na21073na21103na21143na21173na21203na21225se22505sh20500nh3b5sb12100nh1b PDF

    Contextual Info: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


    Original     		si8902edb2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET


    Original     		si8901edb8901e2002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: Si8407DB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.027 at VGS = - 4.5 V - 8.2 0.032 at VGS = - 2.5 V - 7.5 0.045 at VGS = - 1.8 V - 6.6 MICRO FOOT Bump Side View S S 4 6 G S 3 • TrenchFET Power MOSFET


    Original     		si8407db2002/95/ec2011/65/eu12-mar-12 PDF

    Contextual Info: Si8439DB Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () Max. (A)a, e ID 0.025 at VGS = - 4.5 V - 9.2 0.030 at VGS = - 2.5 V - 8.4 0.037 at VGS = - 1.8 V - 7.6 0.061 at VGS = - 1.5 V - 5.9 0.125 at VGS = - 1.2 V


    Original     		si8439db2011/65/eu2002/95/ec12-mar-12 PDF

    Contextual Info: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET


    Original     		si8901edb8901e2011/65/eu2002/95/ec+112-mar-12 PDF

    Contextual Info: Si8902AEDB www.vishay.com Vishay Siliconix N-Channel 24 V D-S MOSFET FEATURES PRODUCT SUMMARY 24 • TrenchFET power MOSFET RS1S2 (Ω) Max. IS1S2 (A) a 0.028 at VGS = 4.5 V 5.9 • Small 2.4 mm x 1.6 mm outline 0.029 at VGS = 3.7 V 5.8 • Thin 0.6 mm max. height


    Original     		si8902aedb2002/95/ec2011/65/eujs709a+102-oct-12 PDF