636 TRANSISTOR Search Results

bc 640

Abstract: BC636 BC640 Q68000-A3366 Q68000-A3367 Q68000-A3365 marking 636
Contextual Info: PNP Silicon AF Transistors BC 636 … BC 640 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 635, BC 637, BC 639 NPN ● 2 3 1 Type Marking Ordering Code BC 636 BC 638 BC 640 – Q68000-A3365

BC639

Abstract: r 639 r 640 BC 639 bc635 BC637 JEDECTO-92 bc 640 BC 137 complementary 637 638 BC 138
Contextual Info: BC 635 • BC 637 • BC 639 Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: Kom plem entäre NF-Treiberstufen. K om plernentärtypen zu BC 636/BC 638/BC 640 Applications: For com plem entary AF driver stages.

BC638

Abstract: bc640 BC636 bc640 pnp transistors BC 293 bc640 motorola
Contextual Info: MOTOROLA Order this document by BC636/D SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC636 BC638 BC640 PNP Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Symbol BC 636 BC 638 BC 640 Unit Collector – Emitter Voltage VCEO –45 –60 –80

BC640

Abstract: bc636 bc 637 bc 640 bc 141 BC 638 r 639 r 640 bc638 bc 106 BC 143
Contextual Info: BC 636 • BC 638 • BC 640 Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: Kom plem entäre NF-Treiberstufen. K om plernentärtypen zu BC 635/BC 637/BC 639 Applications: For com plem entary AF driver stages.

BC639

Abstract: BC 639 Q68000-A2285 Q68000-A3360 Q68000-A3361 BC635 complementary 637 638 bc63
Contextual Info: NPN Silicon AF Transistors BC 635 … BC 639 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 636, BC 638, BC 640 PNP ● 2 3 1 Type Marking Ordering Code BC 635 BC 637 BC 639 – Q68000-A3360

Contextual Info: BC635/636 Transistors NPN Monolithic Transistor Pair Number of Devices2 Type NPN/PNP V(BR)CEO (V) V(BR)CBO (V) I(C) Max. (A) P(D) Max. (W)1.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.

TPS2051DBV

Contextual Info: User's Guide SLVU466B – June 2011 – Revised July 2012 Single-Channel, Power-Distribution Switch Evaluation Module This user’s guide describes the TPS20xxCDBVEVM-636 and TPS20xxCDGNEVM-635 evaluation modules EVM . This guide contains the EVM schematics, bill of materials, assembly drawings, and top

710 comparator

Abstract: RS 305-636 rs 306-011 positive negative voltage regulator variable
Contextual Info: Issued March 1997 232-2201 Data Pack J Dual regulators Data Sheet RS stock numbers 305-636, 306-011 Two monolithic regulators in D.I.L. packages fixed or variable complementary outputs. Variable RS stock no. 306-011 Absolute maximum ratings at TAMB 25°C Input voltage _±35 V

ELECTRONIC 12V RELAY HELLA

Abstract: Resetable fuse PPTC anps039e SMD fuse 10A siemens automotive relay dc 12v ptc resetable low current fuse SIEMENS FUSE Electronic Fuse BTS640S2 FUSE SIEMENS
Contextual Info: 8th Intern. Conference Vehicle Electronics October 8-9, 1998, Baden-Baden Fuse Replacement with Smart Power Semiconductors Fuse Replacement with Smart Power Semiconductors Dr. A. Graf, Siemens AG, HL PS TM, 81617 Munich, Tel. 089/ 636-22805 H. Estl, Siemens AG, HL PS TM 2, 81617 Munich

710 comparator

Abstract: RS 305-636 positive negative voltage regulator variable
Contextual Info: Issued March 1988 002-040 Data Pack J Dual regulators Data Sheet RS stock numbers 305-636, 306-011 Two monolithic regulators in D.I.L. packages fixed or variable complementary outputs. Variable RS stock no. 306-011 Absolute maximum ratings at TAMB 25°C Input voltage _±35 V

4k7 variable resistor

Abstract: circuit diagram of rc car smd Variable resistor 10K ohm 3 pins Variable resistor 10K ohm Variable resistor 10K ohm siemens "function generator" TDA car audio amplifier RC CAR circuit diagram RC car circuit VOLTAGE SENSITIVE resistor SIEMENS
Contextual Info: +/ $SSOLFDWLRQ 1RWH +LJK UHTXHQF\ 3URGXFWV CAR RADIO FM – IF TDA 4321XS HL HF AT CR MCH B R. EMSLANDER TEL.: .49 89 636 24465 Dec. 18, 98 TDA 4321XS CAR RADIO Functional Description: The FM IF demodulator TDA 4321XS has been designed especially for car radio applications.

BC639 18

Abstract: 2N929 2N930 BCW60 BCW61 BCX70 BCX71 BCY58 BCY59 BCY72
Contextual Info: AF transistors Continued Type Group Structure FigNr. Maximum ratings C h aracteristics ^tot at 7C mA ^CEO V fj at MHz 7C mA af e at /q and LU 'am b = +45° c W mA F at dB / kHz BC 635 NPN 27 1.06) 1000 45 50 50 40-250 150 2 - - BC 636 PNP 27 1.06) 1000 45

rtd pt100 interface to 8051

Abstract: 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm
Contextual Info: INDEX Order Code Description _ 102-271 794-740 102-246 794-752 101-930 102-283 101-886 101-953 _ _ 688-137 688-149 _ _ 597-387 705-536 473-728 473-753 473-730 473-741 473-881 _ _ _ 690-648 690-703 690-636 791-180 _ 791-805 _ 101-564 101-540 101-552 101-515

ST2S05

Abstract: st2506
Contextual Info: SLOTTED OPTSCAL SWITCH QPTDELECiROHiCi CNY36 £ h D1 02 *J L l O r D | \ 0 b| bt SECTION X - X LEAD PROFILE T SYMBOL MILLIMETERS MIN. MAS*. A 107 11.0 A. 3,0 3.2 b ' .800 .750 b, .50 MOM 0, 11.5 12.3 3.0 D, 3.3 7.S 6.9 * 2.3 2.8 . * E? 6.15 636 L B.00

transistor C 639 W

Abstract: transistor 639 BC 639 transistor transistor BC 639 transistor BC 637 Transistor S 637 T transistor BC 639 c transistor BC 635 transistor bc 100 bc 639
Contextual Info: BC 635 BC 637 NPN S IL IC O N T R A N S IS T O R , E P IT A X IA L P LA N A R TRANSISTOR NPN S ILIC IU M , P LAN A R E P IT A X IA L BC 639 Compì, of BC 636, BC 638, BC 640 - Driver stages of audio amplifiers Etages "D rive rs" d'amplificateurs BF 'CEO h21E 150m A

digital signature block diagram

Abstract: motherboard major problems MOTHERBOARD CIRCUIT diagram explained dead motherboard bios recovery 28F002BV-T motherboard electronic circuit diagram circuit diagram of flash bios bios programmer computer motherboard circuit diagram image 29219* intel
Contextual Info: E AP-636 APPLICATION NOTE Preventing BIOS Failures Using Intel’s Boot Block Flash Memory December 1996 Order Number: 292192-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of

222259116641

Abstract: 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module BLV859
Contextual Info: APPLICATION NOTE BLV859 UHF linear push-pull power transistor AN98013 Philips Semiconductors BLV859 UHF linear push-pull power transistor CONTENTS 1 ABSTRACT 2 INTRODUCTION 2.1 Amplifier Electrical design objectives 3 DESIGN OF THE AMPLIFIER 3.1 3.2 3.3 3.4

CTN639

Abstract: CTN640 transistor C 639 W CTN635 CTN636 CTN637 CTN638
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-237 Plastic Package CTN635, CTN637, CTN639 CTN636, CTN638, CTN640 CTN635, 637, 639 NPN SILICON PLANAR EPITAXIAL TRANSISTORS CTN636, 638, 640 PNP SILICON PLANAR EPITAXIAL TRANSISTORS

transistor Bc 540

Abstract: TRANSISTOR BC 135 transistor Bc 540 pin BC 540 TRANSISTOR Bc 540 transistor B 540 bcw 25 transistor bcw 91 transistor ESM635 transistor BC 635
Contextual Info: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -c s f Case ^ ^ ^ 1 0 92 Polarity NPN PN P N PN CB-1% PN P NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PN P v CEO B Ç 2 3 8 .

bc 540

Abstract: BCW90 bcw 94 b ESM636 BCW91B ESM 639 BCW 90 BCW91 ESM638 Esm635
Contextual Info: o general purpose transistors — plastic case transistors usage général — boîtier plastique M axim um ratings Type NPN PNP THOMSON-CSF Characteristics at 25°C Ptot VCEO mW (V) BC 559 BC 559 B BC 559 C 500 25 125 200 420 BC 560 BC 560 B BC 560 C 500

TD-2411

Abstract: NEC 3552 2SC5011 2SC5011-T1 2SC5011-T2 702 mini transistor P1039 1357 transistor NEC
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters PART NUMBER QUANTITY 2SC5011-T1 3 Kpcs/Reel.

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product • Low Noise, High Gain • Low Voltage Operation

transistor NEC D 882 p

Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain

transistor C636

Abstract: case sot30 BCX75 C637 BCX76 SOT-30
Contextual Info: BCX 75, BCX76 PNP Transistors for AF pre-stages, driver stages and switching applications B C X 7 5 and BCX 76 are epitaxial PNP silicon planar transistors in a package 10 A 3 DIN 41868 sim. SO T-30 . The transistors are suitable for use in AF preand driver stages as well as for switching applications.